Fairchild/ON Semiconductor FDS6575

Name: FDS6575
Brand: Fairchild/ON Semiconductor
SKU: 2478184-FDS6575
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS6575

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478184-FDS6575

Description:: MOSFET P-CH 20V 10A 8-SO

ECAD Model:

Datasheet:: FDS6575

Specifications

Fairchild/ON Semiconductor FDS6575 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6575.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
18 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2001
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
13MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-10A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
16 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4951pF @ 10V
Current - Continuous Drain (Id) @ 25°C
10A Ta
Gate Charge (Qg) (Max) @ Vgs
74nC @ 4.5V
Rise Time
9ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
78 ns
Turn-Off Delay Time
196 ns
Continuous Drain Current (ID)
10A
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
Nominal Vgs
-600 mV
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS6575 Description
This tough gate variant of an advanced PowerTrench technology is a P-Channel 2.5V defined MOSFET. It was designed with a wide variety of gate drive voltages (2.5V–8V) in mind for power management applications.

FDS6575 Features
-10 A, -20 V
RDS(ON) = 13 mΩ @ VGS = -4.5 V
RDS(ON) = 17 mΩ @ VGS = -2.5 V
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability

FDS6575 Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection

FDS6575 More Descriptions

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -10A, 13mΩ
P-Channel 20 V 13 mOhm Specified PowerTrench Mosfet - SOIC-8
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, P CH, -20V, -10A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V).

Product Comparison

The three parts on the right have similar specifications to FDS6575.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Case Connection

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Threshold Voltage

View Compare
FDS6575

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

18 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2001

e4

yes

Active

1 (Unlimited)

8

EAR99

13MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

LOGIC LEVEL COMPATIBLE

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

-10A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

16 ns

P-Channel

SWITCHING

13m Ω @ 10A, 4.5V

1.5V @ 250μA

4951pF @ 10V

10A Ta

74nC @ 4.5V

9ns

20V

2.5V 4.5V

±8V

78 ns

196 ns

10A

8V

-20V

-600 mV

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS6064N3

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Obsolete

1 (Unlimited)

8

-

-

NICKEL PALLADIUM GOLD

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

3W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

4m Ω @ 23A, 4.5V

1.5V @ 250μA

7.191pF @ 10V

23A Ta

98nC @ 4.5V

-

20V

1.8V 4.5V

±8V

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

unknown

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

DRAIN

23A

0.004Ohm

20V

-

FDS6575 vs FDS6064N3
FDS6688S

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

8

-

-

MATTE TIN

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

2.5W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6m Ω @ 16A, 10V

3V @ 1mA

3.29pF @ 15V

16A Ta

78nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

260

-

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

-

16A

0.006Ohm

30V

-

FDS6575 vs FDS6688S
FDS6690AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

18 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

2004

e4

yes

Active

1 (Unlimited)

8

EAR99

12MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

-

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

10A

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

8 ns

N-Channel

SWITCHING

12m Ω @ 10A, 10V

3V @ 1mA

910pF @ 15V

10A Ta

23nC @ 10V

5ns

-

4.5V 10V

±20V

6 ns

25 ns

10A

20V

30V

1.6 V

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

1.6V

FDS6575 vs FDS6690AS