Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDS6570A
FDS6570A

Fairchild/ON Semiconductor FDS6570A

Part Number:
FDS6570A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2479675-FDS6570A
Description:
MOSFET N-CH 20V 15A 8SOIC
ECAD Model:
Datasheet:
FDS6570A

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDS6570A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS6570A.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    15A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 15A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4700pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    15A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    66nC @ 5V
  • Rise Time
    27ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    95 ns
  • Continuous Drain Current (ID)
    15A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain-source On Resistance-Max
    0.0075Ohm
  • Drain to Source Breakdown Voltage
    20V
  • Nominal Vgs
    900 mV
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS6570A Description
This N-Channel 2.5V specified MOSFET is made utilizing the cutting-edge PowerTrench technology from ON Semiconductor, which has been carefully designed to reduce on-state resistance while maintaining exceptional switching performance. Low in-line power loss and quick switching are required in low voltage and battery-powered applications, which are well suited for these devices.

FDS6570A Features
Low gate charge (47nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability

FDS6570A Applications
DC/DC converter
Load switch
Battery protection
FDS6570A More Descriptions
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 15A, 7.5mΩ
Single N-Channel 20 V 7.5 mOhm 2.5V PowerTrench Mosfet SOIC-8
Trans MOSFET N-CH 20V 15A 8-Pin SOIC N T/R
MOSFET, N-CH, 20V, 15A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Product Comparison
The three parts on the right have similar specifications to FDS6570A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Published
    Resistance
    Threshold Voltage
    View Compare
  • FDS6570A
    FDS6570A
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    FET General Purpose Power
    20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    15A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    20 ns
    N-Channel
    SWITCHING
    7.5m Ω @ 15A, 4.5V
    1.5V @ 250μA
    4700pF @ 10V
    15A Ta
    66nC @ 5V
    27ns
    2.5V 4.5V
    ±8V
    35 ns
    95 ns
    15A
    8V
    0.0075Ohm
    20V
    900 mV
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS6064N7
    FDS6064N7
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    3W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    3.5m Ω @ 23A, 4.5V
    1.5V @ 250μA
    7.191pF @ 10V
    23A Ta
    98nC @ 4.5V
    -
    1.8V 4.5V
    ±8V
    -
    -
    -
    -
    0.0035Ohm
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    NICKEL PALLADIUM GOLD
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    20V
    23A
    60A
    20V
    -
    -
    -
    FDS6570A vs FDS6064N7
  • FDS6690AS
    FDS6690AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    10A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    8 ns
    N-Channel
    SWITCHING
    12m Ω @ 10A, 10V
    3V @ 1mA
    910pF @ 15V
    10A Ta
    23nC @ 10V
    5ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    10A
    20V
    -
    30V
    1.6 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2004
    12MOhm
    1.6V
    FDS6570A vs FDS6690AS
  • FDS6670AS
    FDS6670AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    -
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    13.5A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    10 ns
    N-Channel
    SWITCHING
    9m Ω @ 13.5A, 10V
    3V @ 1mA
    1540pF @ 15V
    13.5A Ta
    38nC @ 10V
    5ns
    4.5V 10V
    ±20V
    18 ns
    27 ns
    13.5A
    20V
    -
    30V
    -
    1.5mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2005
    9MOhm
    -
    FDS6570A vs FDS6670AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for FDS6570A
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.