Fairchild/ON Semiconductor FDMC8884

Name: FDMC8884
Brand: Fairchild/ON Semiconductor
SKU: 2479347-FDMC8884
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC8884

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479347-FDMC8884

Description:: MOSFET N-CH 30V 9A POWER33

ECAD Model:

Datasheet:: FDMC8884

Specifications

Fairchild/ON Semiconductor FDMC8884 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8884.

Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-MLP (3.3x3.3)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.3W Ta 18W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
685pF @ 15V
Current - Continuous Drain (Id) @ 25°C
9A Ta 15A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

FDMC8884 Overview
The maximum input capacitance of this device is 685pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

FDMC8884 Features
a 30V drain to source voltage (Vdss)

FDMC8884 Applications
There are a lot of Rochester Electronics, LLC
FDMC8884 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

FDMC8884 More Descriptions

N-Channel 30 V 19 mOhm Surface Mount Power Trench Mosfet - Power 33
Mosfet, N Channel, 30V, 15A, Mlp 3.3X3.3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V Rohs Compliant: Yes |Onsemi FDMC8884.
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
MOSFET, N CH, 30V, 15A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:18W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to FDMC8884.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Weight

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

HTS Code

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Element Configuration

Continuous Drain Current (ID)

Contact Plating

Number of Pins

Transistor Element Material

Number of Terminations

Resistance

Subcategory

Terminal Position

JESD-30 Code

Number of Elements

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Terminal Form

Qualification Status

Number of Channels

Max Junction Temperature (Tj)

Nominal Vgs

View Compare
FDMC8884

Fairchild/ON Semiconductor

Surface Mount

8-PowerWDFN

8-MLP (3.3x3.3)

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.3W Ta 18W Tc

N-Channel

19mOhm @ 9A, 10V

2.5V @ 250μA

685pF @ 15V

9A Ta 15A Tc

14nC @ 10V

30V

4.5V 10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMC8360LET40

Fairchild/ON Semiconductor

Surface Mount

8-PowerWDFN

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

2.8W Ta 75W Tc

N-Channel

2.1m Ω @ 27A, 10V

3V @ 250μA

5300pF @ 20V

27A Ta 141A Tc

80nC @ 10V

40V

4.5V 10V

±20V

ROHS3 Compliant

ACTIVE (Last Updated: 1 week ago)

19 Weeks

Surface Mount

152.7mg

e3

yes

EAR99

Tin (Sn)

8541.29.00.95

260

not_compliant

NOT SPECIFIED

Single

141A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDMC8884 vs FDMC8360LET40
FDMC8462

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

2W Ta 41W Tc

N-Channel

5.8m Ω @ 13.5A, 10V

3V @ 250μA

2660pF @ 20V

14A Ta 20A Tc

43nC @ 10V

-

4.5V 10V

±20V

ROHS3 Compliant

ACTIVE (Last Updated: 11 hours ago)

43 Weeks

Surface Mount

32.13mg

e4

yes

EAR99

Nickel/Palladium (Ni/Pd)

-

-

-

-

Single

14A

Gold

8

SILICON

5

5.8MOhm

FET General Purpose Power

DUAL

S-PDSO-N5

1

ENHANCEMENT MODE

2W

DRAIN

12 ns

SWITCHING

4ns

3 ns

27 ns

2V

20V

64A

40V

50A

1.05mm

3.3mm

3.3mm

No SVHC

No

Lead Free

-

-

-

-

-

FDMC8884 vs FDMC8462
FDMC8651

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

2.3W Ta 41W Tc

N-Channel

6.1m Ω @ 15A, 4.5V

1.5V @ 250μA

3365pF @ 15V

15A Ta 20A Tc

27.2nC @ 4.5V

-

2.5V 4.5V

±12V

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

34 Weeks

Surface Mount

32.13mg

e4

yes

EAR99

Nickel/Palladium (Ni/Pd)

-

NOT SPECIFIED

-

NOT SPECIFIED

Single

15A

-

8

SILICON

5

6.1MOhm

FET General Purpose Power

DUAL

S-PDSO-N5

1

ENHANCEMENT MODE

2.3W

DRAIN

18 ns

SWITCHING

9ns

6 ns

35 ns

800mV

12V

64A

30V

60A

1.05mm

3.3mm

3.3mm

No SVHC

-

Lead Free

NO LEAD

Not Qualified

1

150°C

1.1 V

FDMC8884 vs FDMC8651