Fairchild/ON Semiconductor FDMC86570L

Name: FDMC86570L
Brand: Fairchild/ON Semiconductor
SKU: 2484302-FDMC86570L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC86570L

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484302-FDMC86570L

Description:: MOSFET N-CH 60V 56A POWER33

ECAD Model:

Datasheet:: FDMC86570L

Specifications

Fairchild/ON Semiconductor FDMC86570L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86570L.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
152.7mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.3W Ta 54W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.3W
Case Connection
DRAIN
Turn On Delay Time
19 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.3m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6705pF @ 30V
Current - Continuous Drain (Id) @ 25°C
18A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs
88nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
18A
Threshold Voltage
1.8V
JEDEC-95 Code
MO-240BA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
56A
Drain-source On Resistance-Max
0.0043Ohm
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
200A
Avalanche Energy Rating (Eas)
253 mJ
Max Junction Temperature (Tj)
150°C
Height
800μm
Length
3.4mm
Width
3.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FDMC86570L Description
FDMC86570L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a Drain to Source Breakdown Voltage of 60V. Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.

FDMC86570L Features
Shielded Gate MOSFET Technology
Max rDS(on) = 4.3 m|? at VGS = 10 V, ID = 18 A
Max rDS(on) = 6.5 m|? at VGS = 4.5 V, ID = 15 A
High performance technology for extremely low rDS(on)
Termination is Lead-free
RoHS Compliant

FDMC86570L Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDMC86570L More Descriptions

PT7 N-ch 60/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
N-Channel Shielded Gate PowerTrench® MOSFET 60V , 84A, 4.3mΩ
N-Channel 60 V 87 A 4.3 mO Surface Mount PowerTrench Mosfet - Power33
MOSFET, N-CH, 60V, 84A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 18A I(D), 60V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 60V, 84A, POWER 33-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0031ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 54W; Transistor Case Style: Power 33; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to FDMC86570L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

Length

Width

Radiation Hardening

RoHS Status

Published

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Nominal Vgs

REACH SVHC

Lead Free

Contact Plating

Resistance

View Compare
FDMC86570L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

20 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

8

152.7mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

1

2.3W Ta 54W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

19 ns

N-Channel

SWITCHING

4.3m Ω @ 18A, 10V

3V @ 250μA

6705pF @ 30V

18A Ta 56A Tc

88nC @ 10V

12ns

4.5V 10V

±20V

10 ns

38 ns

18A

1.8V

MO-240BA

20V

56A

0.0043Ohm

60V

200A

253 mJ

150°C

800μm

3.4mm

3.4mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
FDMC612PZ

Fairchild/ON Semiconductor

CONSULT SALES OFFICE (Last Updated: 1 week ago)

-

Surface Mount

Surface Mount

8-PowerWDFN

8

180mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

5

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

Other Transistors

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

1

2.3W Ta 26W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

26 ns

P-Channel

SWITCHING

8.4m Ω @ 14A, 4.5V

1.5V @ 250μA

7995pF @ 10V

14A Ta

74nC @ 4.5V

52ns

2.5V 4.5V

±12V

81 ns

96 ns

14A

-

MO-240BA

12V

40A

-

-

50A

-

-

750μm

3.3mm

3.3mm

-

RoHS Compliant

2017

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

20V

20V

-

-

-

-

-

FDMC86570L vs FDMC612PZ
FDMC86244

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 18 hours ago)

12 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

8

180mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

-

2.3W Ta 26W Tc

Single

ENHANCEMENT MODE

26W

DRAIN

5.3 ns

N-Channel

SWITCHING

134m Ω @ 2.8A, 10V

4V @ 250μA

345pF @ 75V

2.8A Ta 9.4A Tc

5.9nC @ 10V

1.5ns

6V 10V

±20V

2.3 ns

9.9 ns

9.4A

2.6V

-

20V

-

-

150V

-

-

-

750μm

3.3mm

3.3mm

No

ROHS3 Compliant

2006

-

-

-

-

-

2.6 V

No SVHC

Lead Free

-

-

FDMC86570L vs FDMC86244
FDMC8462

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 11 hours ago)

43 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

Nickel/Palladium (Ni/Pd)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

-

2W Ta 41W Tc

Single

ENHANCEMENT MODE

2W

DRAIN

12 ns

N-Channel

SWITCHING

5.8m Ω @ 13.5A, 10V

3V @ 250μA

2660pF @ 20V

14A Ta 20A Tc

43nC @ 10V

4ns

4.5V 10V

±20V

3 ns

27 ns

14A

2V

-

20V

64A

-

40V

50A

-

-

1.05mm

3.3mm

3.3mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

No SVHC

Lead Free

Gold

5.8MOhm

FDMC86570L vs FDMC8462

Certification

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FDMC86570L Specification

Part Number	Manufacturers	Description	Stock	Price
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R	64	1 $2.08 10 $1.8763 25 $0.9115
FDMC86570LET60 DISTI #FDMC86570LET60	ON Semiconductor	MOSFET N-CH 60V 56A POWER33 RoHS: Compliant	52	1 $2.5 10 $2.26 100 $1.8164 500 $1.41272 1000 $1.17054
FDMC86570LET60 DISTI #FDMC86570LET60	ON Semiconductor	MOSFET N-CH 60V 56A POWER33 RoHS: Compliant	52	1 $2.5 10 $2.26 100 $1.8164 500 $1.41272 1000 $1.17054
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	MOSFET N-CH 60V 56A POWER33 RoHS: Compliant	18	1 $2.25 10 $2.03 100 $1.6315 500 $1.26896 1000 $1.05142
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	MOSFET N-CH 60V 56A POWER33 RoHS: Compliant	18	1 $2.25 10 $2.03 100 $1.6315 500 $1.26896 1000 $1.05142
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	MOSFET N-CH 60V 56A POWER33 RoHS: Compliant	0	3000 $0.9504
FDMC86570LET60 DISTI #FDMC86570LET60	ON Semiconductor	MOSFET N-CH 60V 56A POWER33 RoHS: Compliant	0	3000 $1.05806
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R	64	8 $2.165 10 $1.9555 25 $1.5497
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	Trans MOSFET N-CH 60V 18A 8-Pin Power 33 T/R (Alt: RoHS: Compliant	0
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	Trans MOSFET N-CH 60V 18A 8-Pin Power 33 T/R (Alt: RoHS: Compliant	0	3000 $1.3909 6000 $1.1379 12000 $0.9719 18000 $0.8829 30000 $0.8429
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	Trans MOSFET N-CH 60V 18A 8-Pin Power 33 T/R - Tap RoHS: Compliant	0	3000 $0.8359 6000 $0.8309 12000 $0.8199 18000 $0.8099 30000 $0.7899
FDMC86570LET60 DISTI #FDMC86570LET60	ON Semiconductor	Trans MOSFET N-CH 60V 18A 8-Pin PQFN T/R (Alt: FDM RoHS: Compliant	0	3000 $1.2389 6000 $1.0319 12000 $0.9529 18000 $0.8849 30000 $0.8259
FDMC86570LET60 DISTI #FDMC86570LET60	ON Semiconductor	Trans MOSFET N-CH 60V 18A 8-Pin PQFN T/R - Tape an RoHS: Compliant	0	3000 $0.9309 6000 $0.9249 12000 $0.9129 18000 $0.9009 30000 $0.8789
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	FET 60V 4.3 MOHM PQFN33 / REEL	0	1 $0.866 9000 $0.834
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	MOSFET, N-CH, 60V, 84A, POWER 33-8, Transistor Po	1350	1 $1.89 10 $1.6 25 $1.49 50 $1.39 100 $1.28 250 $1.21 500 $1.13 1000 $0.928
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	MOSFET 60V N Chan Shielded Gate Power Trench RoHS: Compliant	0	1 $1.89 10 $1.6 100 $1.28 500 $1.13 1000 $0.928 3000 $0.865
FDMC86570LET60 DISTI #FDMC86570LET60	ON Semiconductor	MOSFET FET 60V 4.3 MOHM PQFN33 RoHS: Compliant	0	1 $2.1 10 $1.79 100 $1.43 500 $1.25 1000 $1.04 3000 $0.962
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	MOSFET, N-CH, 60V, 84A, POWER 33-8 RoHS: Compliant	1350	5 $3.75 25 $3.21 100 $2.2 250 $1.8 500 $1.48 1000 $1.36 5000 $1.29
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	MOSFET, N-CH, 60V, 84A, POWER 33-8 RoHS: Compliant	1370	1 $1.65 10 $1.28 100 $0.989 250 $0.931 500 $0.872
FDMC86570L DISTI #FDMC86570L	ON Semiconductor	Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R RoHS: Compliant	64	10 $1.9555 25 $1.5497

FDMC865~~(5)~~
FDMC86~~(32)~~
FDMC8~~(67)~~
FDMC~~(78)~~
FDM~~(86)~~

Fairchild/ON Semiconductor FDMC86570L

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