Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDMC86260
FDMC86260

Fairchild/ON Semiconductor FDMC86260

Part Number:
FDMC86260
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481984-FDMC86260
Description:
MOSFET N CH 150V 5.4A POWER 33
ECAD Model:
Datasheet:
FDMC86260

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDMC86260 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86260.
  • Lifecycle Status
    ACTIVE (Last Updated: 20 hours ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    152.7mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Base Part Number
    FDMC86260
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 54W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    54W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    34m Ω @ 5.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1330pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    5.4A Ta 16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 10V
  • Rise Time
    2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.3 ns
  • Turn-Off Delay Time
    17 ns
  • Continuous Drain Current (ID)
    16A
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5.4A
  • Drain-source On Resistance-Max
    0.034Ohm
  • Drain to Source Breakdown Voltage
    150V
  • Avalanche Energy Rating (Eas)
    121 mJ
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMC86260 Description
FDMC86260 is an N-Channel Power Trench? MOSFET manufactured by onsemi. The N-Channel MOSFET FDMC86260 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor FDMC86260 is in the Power-33-8 package with 54w power dissipation. 

FDMC86260 Features
Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A
Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A
High-performance technology for extremely low RDS(on)
100% UIL Tested
Termination is Lead-free

FDMC86260 Applications
cellular phones 
laptop computers
photovoltaic systems 
wind turbines
shunt voltage regulator and the series voltage regulator
FDMC86260 More Descriptions
N-Channel Power Trench® MOSFET 150V, 25A, 34mΩ
N-Channel 150 V 16 A 34 MO Surface Mount PowerTrench Mosfet - Power 33
MOSFET, N-CH, 25A, 150V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 5.4A I(D), 150V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 25A, 150V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 54W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to FDMC86260.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Base Part Number
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    Contact Plating
    Resistance
    Pulsed Drain Current-Max (IDM)
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDMC86260
    FDMC86260
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 20 hours ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    152.7mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FDMC86260
    S-PDSO-N5
    1
    2.3W Ta 54W Tc
    Single
    ENHANCEMENT MODE
    54W
    DRAIN
    9.5 ns
    N-Channel
    SWITCHING
    34m Ω @ 5.4A, 10V
    4V @ 250μA
    1330pF @ 75V
    5.4A Ta 16A Tc
    21nC @ 10V
    2ns
    6V 10V
    ±20V
    3.3 ns
    17 ns
    16A
    MO-240BA
    20V
    5.4A
    0.034Ohm
    150V
    121 mJ
    750μm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC86244
    FDMC86244
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 18 hours ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    S-PDSO-N5
    1
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    26W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    6V 10V
    ±20V
    2.3 ns
    9.9 ns
    9.4A
    -
    20V
    -
    -
    150V
    -
    750μm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    Lead Free
    2.6V
    2.6 V
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDMC86260 vs FDMC86244
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    S-PDSO-N5
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    -
    20V
    64A
    -
    40V
    -
    1.05mm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    Lead Free
    2V
    -
    No SVHC
    Gold
    5.8MOhm
    50A
    -
    -
    -
    -
    -
    -
    FDMC86260 vs FDMC8462
  • FDMC8651
    FDMC8651
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    9ns
    2.5V 4.5V
    ±12V
    6 ns
    35 ns
    15A
    -
    12V
    64A
    -
    30V
    -
    1.05mm
    3.3mm
    3.3mm
    -
    ROHS3 Compliant
    Lead Free
    800mV
    1.1 V
    No SVHC
    -
    6.1MOhm
    60A
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    150°C
    FDMC86260 vs FDMC8651
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for FDMC86260
Popular Search Part Number Related Keywords Search Tags

Latest News

  • 20 March 2024

    L9110S Advantages, Pinout, Working Principle and Application

    Ⅰ. L9110S overviewⅡ. Advantages of L9110SⅢ. L9110S pin configurationⅣ. Hardware introduction of L9110S motor drive moduleⅤ. Working principle of L9110S motor drive moduleⅥ. L9110S application circuitⅦ. How to...
  • 20 March 2024

    PCF8563 Alternatives, Characteristics, Functions and More

    Ⅰ. Introduction to PCF8563Ⅱ. Characteristics of PCF8563Ⅲ. Main functions of PCF8563Ⅳ. Block diagram of PCF8563Ⅴ. How does PCF8563 work?Ⅵ. Application circuit of PCF8563Ⅶ. Limiting values of PCF8563Ⅷ. How...
  • 21 March 2024

    RC0402FR-075K1L Characteristics, Specifications, Construction and Other Details

    Ⅰ. Overview of RC0402FR-075K1LⅡ. Characteristics of RC0402FR-075K1LⅢ. Specifications of RC0402FR-075K1LⅣ. Construction of RC0402FR-075K1LⅤ. Application of RC0402FR-075K1LⅥ. Inventory history of RC0402FR-075K1LⅦ. Manufacturer of RC0402FR-075K1LⅧ. How to use RC0402FR-075K1L resistor...
  • 21 March 2024

    A Comprehensive Guide to AO3400 Field-Effect Transistor

    Ⅰ. Introduction to AO3400Ⅱ. AO3400 technical parametersⅢ. AO3400 symbol, footprint and pin configurationⅣ. AO3400 principle of operationⅤ. What is the typical circuit application of AO3400?Ⅵ. Manufacturer of AO3400Ⅶ....
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.