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FDMC86106LZ

Fairchild/ON Semiconductor FDMC86106LZ

Part Number:
FDMC86106LZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2491430-FDMC86106LZ
Description:
MOSFET N-CH 100V 3.3A POWER33
ECAD Model:
Datasheet:
FDMC86106LZ

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Specifications
Fairchild/ON Semiconductor FDMC86106LZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86106LZ.
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Supplier Device Package
    8-MLP (3.3x3.3)
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    PowerTrench®
  • Published
    2013
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 19W Tc
  • Power Dissipation
    19W
  • Turn On Delay Time
    4.5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    103mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    310pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    3.3A Ta 7.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    6nC @ 10V
  • Rise Time
    1.3ns
  • Drain to Source Voltage (Vdss)
    100V
  • Fall Time (Typ)
    1.4 ns
  • Turn-Off Delay Time
    10 ns
  • Continuous Drain Current (ID)
    7.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    310pF
  • Drain to Source Resistance
    103mOhm
  • Rds On Max
    103 mΩ
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMC86106LZ Description
Fairchild Semiconductor's sophisticated PowerTrench? process, which includes Shielded Gate technology, is used to make these N-Channel logic Level MOSFETs. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.

FDMC86106LZ Features
Technology for Shielded Gate MOSFETs
At Vqs = 10 V, I= 3.3 A, Max ros(on)= 103 mQ.
At Vgs = 4.5 V, Iq = 2.7 A, MaxDsfon) =153 mQ.
Typical HBM ESD protection level > 3 KV (Note 4)
100% UIL Approved and RoHS Compliant

FDMC86106LZ Applications
DC - DC Conversion
FDMC86106LZ More Descriptions
Trans MOSFET N-CH Si 100V 3.3A 8-Pin Power 33 T/R
Tape Reel/Pt5 100V/20V Ll With Zener Nch Power Trench |Onsemi FDMC86106LZ
MOSFET 100V N-Channel PowerTrench MOSFET
Product Comparison
The three parts on the right have similar specifications to FDMC86106LZ.
  • Image
    Part Number
    Manufacturer
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Weight
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Terminal Position
    JESD-30 Code
    Element Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Threshold Voltage
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    REACH SVHC
    Lead Free
    Additional Feature
    View Compare
  • FDMC86106LZ
    FDMC86106LZ
    Fairchild/ON Semiconductor
    Gold
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    8-MLP (3.3x3.3)
    -55°C~150°C TJ
    Cut Tape (CT)
    PowerTrench®
    2013
    Discontinued
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    2.3W Ta 19W Tc
    19W
    4.5 ns
    N-Channel
    103mOhm @ 3.3A, 10V
    2.2V @ 250μA
    310pF @ 50V
    3.3A Ta 7.5A Tc
    6nC @ 10V
    1.3ns
    100V
    1.4 ns
    10 ns
    7.5A
    20V
    100V
    310pF
    103mOhm
    103 mΩ
    750μm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC86102
    FDMC86102
    Fairchild/ON Semiconductor
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    2.3W Ta 41W Tc
    2.3W
    8 ns
    N-Channel
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    -
    4 ns
    14 ns
    20A
    20V
    100V
    -
    -
    -
    950μm
    3.4mm
    3.4mm
    No
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 week ago)
    40 Weeks
    32.13mg
    SILICON
    e4
    yes
    5
    EAR99
    24MOhm
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    DUAL
    S-PDSO-N5
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    6V 10V
    ±20V
    3.1V
    MO-240BA
    7A
    30A
    72 mJ
    3.1 V
    No SVHC
    Lead Free
    -
    FDMC86106LZ vs FDMC86102
  • FDMC86244
    FDMC86244
    Fairchild/ON Semiconductor
    -
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    2.3W Ta 26W Tc
    26W
    5.3 ns
    N-Channel
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    -
    2.3 ns
    9.9 ns
    9.4A
    20V
    150V
    -
    -
    -
    750μm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    ACTIVE (Last Updated: 18 hours ago)
    12 Weeks
    180mg
    SILICON
    e4
    yes
    5
    EAR99
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    DUAL
    S-PDSO-N5
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    6V 10V
    ±20V
    2.6V
    -
    -
    -
    -
    2.6 V
    No SVHC
    Lead Free
    -
    FDMC86106LZ vs FDMC86244
  • FDMC6675BZ
    FDMC6675BZ
    Fairchild/ON Semiconductor
    -
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    2.3W Ta 36W Tc
    2.3W
    11 ns
    P-Channel
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    10ns
    30V
    26 ns
    44 ns
    9.5A
    25V
    -30V
    -
    -
    -
    750μm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    200mg
    SILICON
    e4
    yes
    5
    EAR99
    14.4MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    DUAL
    S-PDSO-N5
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    4.5V 10V
    ±25V
    -1.9V
    -
    40A
    32A
    -
    -
    No SVHC
    Lead Free
    ULTRA-LOW RESISTANCE
    FDMC86106LZ vs FDMC6675BZ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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