FDMC8360L

Fairchild/ON Semiconductor FDMC8360L

Part Number:
FDMC8360L
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482044-FDMC8360L
Description:
MOSFET N-CH 40V 80A POWER33
ECAD Model:
Datasheet:
FDMC8360L

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Specifications
Fairchild/ON Semiconductor FDMC8360L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8360L.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    152.7mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 54W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    54W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.1m Ω @ 27A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5795pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    27A Ta 80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 10V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    80A
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    27A
  • Drain to Source Breakdown Voltage
    40V
  • Pulsed Drain Current-Max (IDM)
    240A
  • Avalanche Energy Rating (Eas)
    294 mJ
  • Height
    750μm
  • Length
    3.4mm
  • Width
    3.4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMC8360L Description
FDMC8360L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 40V. The operating temperature of FDMC8360L is -55??C~150??C TJ and its maximum power dissipation is 2.3W Ta. The Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.

FDMC8360L Features
Shielded Gate MOSFET Technology
Max rDS(on) = 2.1 m|? at VGS = 10 V, ID = 27 A
Max rDS(on) = 3.1 m|? at VGS = 4.5 V, ID = 22 A
High performance technology for extremely low rDS(on)
Termination is Lead-free
100% UIL Tested
RoHS Compliant

FDMC8360L Applications
DC-DC Merchant Power Supply

FDMC8360L More Descriptions
PT8 N-ch 40/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
N-Channel Shielded Gate Power Trench® MOSFET 40V, 80A, 2.1mΩ
Single N-Channel 40 V 2.3 W 80 nC PowerTrench Surface Mount Mosfet - POWER 33-8
MOSFET, N-CH, 40V, 80A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:40V; On Resistance
Power Field-Effect Transistor, 27A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 40V, 80A, POWER 33-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 54W; Transistor Case Style: Power 33; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to FDMC8360L.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Reach Compliance Code
    Qualification Status
    Threshold Voltage
    Drain-source On Resistance-Max
    Nominal Vgs
    REACH SVHC
    Lead Free
    Contact Plating
    Resistance
    View Compare
  • FDMC8360L
    FDMC8360L
    ACTIVE (Last Updated: 1 week ago)
    20 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    152.7mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 54W Tc
    Single
    ENHANCEMENT MODE
    54W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    2.1m Ω @ 27A, 10V
    3V @ 250μA
    5795pF @ 20V
    27A Ta 80A Tc
    80nC @ 10V
    14ns
    4.5V 10V
    ±20V
    11 ns
    38 ns
    80A
    MO-240BA
    20V
    27A
    40V
    240A
    294 mJ
    750μm
    3.4mm
    3.4mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC612PZ
    CONSULT SALES OFFICE (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e4
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    26 ns
    P-Channel
    SWITCHING
    8.4m Ω @ 14A, 4.5V
    1.5V @ 250μA
    7995pF @ 10V
    14A Ta
    74nC @ 4.5V
    52ns
    2.5V 4.5V
    ±12V
    81 ns
    96 ns
    14A
    MO-240BA
    12V
    40A
    -
    50A
    -
    750μm
    3.3mm
    3.3mm
    -
    RoHS Compliant
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    1
    20V
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC7660
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    2.2m Ω @ 20A, 10V
    2.5V @ 250μA
    4830pF @ 15V
    20A Ta 40A Tc
    86nC @ 10V
    6.8ns
    4.5V 10V
    ±20V
    5.7 ns
    36 ns
    20A
    MO-240BA
    20V
    -
    30V
    200A
    200 mJ
    1.05mm
    3.3mm
    3.3mm
    -
    ROHS3 Compliant
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    not_compliant
    Not Qualified
    1.7V
    0.0022Ohm
    1.7 V
    No SVHC
    Lead Free
    -
    -
  • FDMC8462
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    -
    20V
    64A
    40V
    50A
    -
    1.05mm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    2V
    -
    -
    No SVHC
    Lead Free
    Gold
    5.8MOhm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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