Fairchild/ON Semiconductor FDMC8360L
- Part Number:
- FDMC8360L
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482044-FDMC8360L
- Description:
- MOSFET N-CH 40V 80A POWER33
- Datasheet:
- FDMC8360L
Fairchild/ON Semiconductor FDMC8360L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8360L.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time20 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight152.7mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Power Dissipation-Max2.3W Ta 54W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation54W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.1m Ω @ 27A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5795pF @ 20V
- Current - Continuous Drain (Id) @ 25°C27A Ta 80A Tc
- Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)80A
- JEDEC-95 CodeMO-240BA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)27A
- Drain to Source Breakdown Voltage40V
- Pulsed Drain Current-Max (IDM)240A
- Avalanche Energy Rating (Eas)294 mJ
- Height750μm
- Length3.4mm
- Width3.4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDMC8360L Description
FDMC8360L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 40V. The operating temperature of FDMC8360L is -55??C~150??C TJ and its maximum power dissipation is 2.3W Ta. The Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.
FDMC8360L Features
Shielded Gate MOSFET Technology
Max rDS(on) = 2.1 m|? at VGS = 10 V, ID = 27 A
Max rDS(on) = 3.1 m|? at VGS = 4.5 V, ID = 22 A
High performance technology for extremely low rDS(on)
Termination is Lead-free
100% UIL Tested
RoHS Compliant
FDMC8360L Applications
DC-DC Merchant Power Supply
FDMC8360L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 40V. The operating temperature of FDMC8360L is -55??C~150??C TJ and its maximum power dissipation is 2.3W Ta. The Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.
FDMC8360L Features
Shielded Gate MOSFET Technology
Max rDS(on) = 2.1 m|? at VGS = 10 V, ID = 27 A
Max rDS(on) = 3.1 m|? at VGS = 4.5 V, ID = 22 A
High performance technology for extremely low rDS(on)
Termination is Lead-free
100% UIL Tested
RoHS Compliant
FDMC8360L Applications
DC-DC Merchant Power Supply
FDMC8360L More Descriptions
PT8 N-ch 40/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
N-Channel Shielded Gate Power Trench® MOSFET 40V, 80A, 2.1mΩ
Single N-Channel 40 V 2.3 W 80 nC PowerTrench Surface Mount Mosfet - POWER 33-8
MOSFET, N-CH, 40V, 80A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:40V; On Resistance
Power Field-Effect Transistor, 27A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 40V, 80A, POWER 33-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 54W; Transistor Case Style: Power 33; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
N-Channel Shielded Gate Power Trench® MOSFET 40V, 80A, 2.1mΩ
Single N-Channel 40 V 2.3 W 80 nC PowerTrench Surface Mount Mosfet - POWER 33-8
MOSFET, N-CH, 40V, 80A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:40V; On Resistance
Power Field-Effect Transistor, 27A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 40V, 80A, POWER 33-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 54W; Transistor Case Style: Power 33; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to FDMC8360L.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinReach Compliance CodeQualification StatusThreshold VoltageDrain-source On Resistance-MaxNominal VgsREACH SVHCLead FreeContact PlatingResistanceView Compare
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FDMC8360LACTIVE (Last Updated: 1 week ago)20 WeeksSurface MountSurface Mount8-PowerWDFN8152.7mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 54W TcSingleENHANCEMENT MODE54WDRAIN15 nsN-ChannelSWITCHING2.1m Ω @ 27A, 10V3V @ 250μA5795pF @ 20V27A Ta 80A Tc80nC @ 10V14ns4.5V 10V±20V11 ns38 ns80AMO-240BA20V27A40V240A294 mJ750μm3.4mm3.4mmNoROHS3 Compliant----------------
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CONSULT SALES OFFICE (Last Updated: 1 week ago)-Surface MountSurface Mount8-PowerWDFN8180mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e4yesObsolete1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)Other TransistorsMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 26W TcSingleENHANCEMENT MODE2.3WDRAIN26 nsP-ChannelSWITCHING8.4m Ω @ 14A, 4.5V1.5V @ 250μA7995pF @ 10V14A Ta74nC @ 4.5V52ns2.5V 4.5V±12V81 ns96 ns14AMO-240BA12V40A-50A-750μm3.3mm3.3mm-RoHS CompliantNO LEADNOT SPECIFIEDNOT SPECIFIED120V20V---------
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ACTIVE (Last Updated: 6 days ago)10 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2009e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN14 nsN-ChannelSWITCHING2.2m Ω @ 20A, 10V2.5V @ 250μA4830pF @ 15V20A Ta 40A Tc86nC @ 10V6.8ns4.5V 10V±20V5.7 ns36 ns20AMO-240BA20V-30V200A200 mJ1.05mm3.3mm3.3mm-ROHS3 CompliantNO LEADNOT SPECIFIEDNOT SPECIFIED---not_compliantNot Qualified1.7V0.0022Ohm1.7 VNo SVHCLead Free--
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ACTIVE (Last Updated: 11 hours ago)43 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512W Ta 41W TcSingleENHANCEMENT MODE2WDRAIN12 nsN-ChannelSWITCHING5.8m Ω @ 13.5A, 10V3V @ 250μA2660pF @ 20V14A Ta 20A Tc43nC @ 10V4ns4.5V 10V±20V3 ns27 ns14A-20V64A40V50A-1.05mm3.3mm3.3mmNoROHS3 Compliant--------2V--No SVHCLead FreeGold5.8MOhm
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