Fairchild/ON Semiconductor FDMC8026S
- Part Number:
- FDMC8026S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481523-FDMC8026S
- Description:
- MOSFET N-CH 30V 19A 8MLP
- Datasheet:
- FDMC8026S
Fairchild/ON Semiconductor FDMC8026S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8026S.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight165.33333mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Power Dissipation-Max2.4W Ta 36W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation36W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.4m Ω @ 19A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds3165pF @ 15V
- Current - Continuous Drain (Id) @ 25°C19A Ta 21A Tc
- Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)19A
- Threshold Voltage1.6V
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0044Ohm
- Drain to Source Breakdown Voltage30V
- Avalanche Energy Rating (Eas)66 mJ
- Height750μm
- Length3.3mm
- Width3.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDMC8026S Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 66 mJ.A device's maximum input capacitance is 3165pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 19A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.6V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDMC8026S Features
the avalanche energy rating (Eas) is 66 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
a threshold voltage of 1.6V
FDMC8026S Applications
There are a lot of ON Semiconductor
FDMC8026S applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 66 mJ.A device's maximum input capacitance is 3165pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 19A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.6V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDMC8026S Features
the avalanche energy rating (Eas) is 66 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
a threshold voltage of 1.6V
FDMC8026S Applications
There are a lot of ON Semiconductor
FDMC8026S applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
FDMC8026S More Descriptions
Trans MOSFET N-CH 30V 19A 8-Pin Power 33 EP T/R
The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.
MOSFET, N CH, 30V, 21A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.
MOSFET, N CH, 30V, 21A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The three parts on the right have similar specifications to FDMC8026S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusHTS CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)ResistanceJEDEC-95 CodeDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Nominal VgsLead FreePublishedAdditional FeatureView Compare
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FDMC8026SACTIVE (Last Updated: 1 week ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8165.33333mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e4yesActive1 (Unlimited)5EAR99Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.4W Ta 36W TcSingleENHANCEMENT MODE36WDRAIN11 nsN-ChannelSWITCHING4.4m Ω @ 19A, 10V3V @ 1mA3165pF @ 15V19A Ta 21A Tc52nC @ 10V5ns4.5V 10V±20V4 ns30 ns19A1.6V20V0.0044Ohm30V66 mJ750μm3.3mm3.3mmNo SVHCNoROHS3 Compliant--------------
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ACTIVE (Last Updated: 1 week ago)19 WeeksSurface MountSurface Mount8-PowerWDFN-152.7mg--55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)-EAR99Tin (Sn)-MOSFET (Metal Oxide)---2.8W Ta 75W TcSingle----N-Channel-2.1m Ω @ 27A, 10V3V @ 250μA5300pF @ 20V27A Ta 141A Tc80nC @ 10V-4.5V 10V±20V--141A----------ROHS3 Compliant8541.29.00.95260not_compliantNOT SPECIFIED40V--------
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ACTIVE (Last Updated: 1 week ago)40 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN8 nsN-ChannelSWITCHING24m Ω @ 7A, 10V4V @ 250μA965pF @ 50V7A Ta 20A Tc18nC @ 10V4ns6V 10V±20V4 ns14 ns20A3.1V20V-100V72 mJ950μm3.4mm3.4mmNo SVHCNoROHS3 Compliant-----24MOhmMO-240BA7A30A3.1 VLead Free--
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ACTIVE (Last Updated: 5 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8200mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)Other TransistorsMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 36W TcSingleENHANCEMENT MODE2.3WDRAIN11 nsP-ChannelSWITCHING14.4m Ω @ 9.5A, 10V3V @ 250μA2865pF @ 15V9.5A Ta 20A Tc65nC @ 10V10ns4.5V 10V±25V26 ns44 ns9.5A-1.9V25V--30V-750μm3.3mm3.3mmNo SVHCNoROHS3 Compliant----30V14.4MOhm-40A32A-Lead Free2010ULTRA-LOW RESISTANCE
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