FDMC8026S

Fairchild/ON Semiconductor FDMC8026S

Part Number:
FDMC8026S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481523-FDMC8026S
Description:
MOSFET N-CH 30V 19A 8MLP
ECAD Model:
Datasheet:
FDMC8026S

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Specifications
Fairchild/ON Semiconductor FDMC8026S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8026S.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    165.33333mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®, SyncFET™
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.4W Ta 36W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    36W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.4m Ω @ 19A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    3165pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    19A Ta 21A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    52nC @ 10V
  • Rise Time
    5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    19A
  • Threshold Voltage
    1.6V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0044Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Avalanche Energy Rating (Eas)
    66 mJ
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMC8026S Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 66 mJ.A device's maximum input capacitance is 3165pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 19A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.6V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

FDMC8026S Features
the avalanche energy rating (Eas) is 66 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
a threshold voltage of 1.6V


FDMC8026S Applications
There are a lot of ON Semiconductor
FDMC8026S applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
FDMC8026S More Descriptions
Trans MOSFET N-CH 30V 19A 8-Pin Power 33 EP T/R
The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.
MOSFET, N CH, 30V, 21A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Product Comparison
The three parts on the right have similar specifications to FDMC8026S.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    HTS Code
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Resistance
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Lead Free
    Published
    Additional Feature
    View Compare
  • FDMC8026S
    FDMC8026S
    ACTIVE (Last Updated: 1 week ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    165.33333mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.4W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    36W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    4.4m Ω @ 19A, 10V
    3V @ 1mA
    3165pF @ 15V
    19A Ta 21A Tc
    52nC @ 10V
    5ns
    4.5V 10V
    ±20V
    4 ns
    30 ns
    19A
    1.6V
    20V
    0.0044Ohm
    30V
    66 mJ
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC8360LET40
    ACTIVE (Last Updated: 1 week ago)
    19 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    -
    152.7mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2.8W Ta 75W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    2.1m Ω @ 27A, 10V
    3V @ 250μA
    5300pF @ 20V
    27A Ta 141A Tc
    80nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    141A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    8541.29.00.95
    260
    not_compliant
    NOT SPECIFIED
    40V
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC86102
    ACTIVE (Last Updated: 1 week ago)
    40 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    6V 10V
    ±20V
    4 ns
    14 ns
    20A
    3.1V
    20V
    -
    100V
    72 mJ
    950μm
    3.4mm
    3.4mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    24MOhm
    MO-240BA
    7A
    30A
    3.1 V
    Lead Free
    -
    -
  • FDMC6675BZ
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    10ns
    4.5V 10V
    ±25V
    26 ns
    44 ns
    9.5A
    -1.9V
    25V
    -
    -30V
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    30V
    14.4MOhm
    -
    40A
    32A
    -
    Lead Free
    2010
    ULTRA-LOW RESISTANCE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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