Fairchild/ON Semiconductor FDMC8010ET30

Name: FDMC8010ET30
Brand: Fairchild/ON Semiconductor
SKU: 2484260-FDMC8010ET30
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC8010ET30

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484260-FDMC8010ET30

Description:: MOSFET N-CH 30V 30A 8-PQFN

ECAD Model:

Datasheet:: FDMC8010ET30

Specifications

Fairchild/ON Semiconductor FDMC8010ET30 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8010ET30.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
152.7mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
ULTRA LOW RESISTANCE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Reach Compliance Code
not_compliant
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.8W Ta 65W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
5860pF @ 15V
Current - Continuous Drain (Id) @ 25°C
30A Ta 174A Tc
Gate Charge (Qg) (Max) @ Vgs
94nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
174A
JEDEC-95 Code
MO-240BA
Drain Current-Max (Abs) (ID)
30A
Drain-source On Resistance-Max
0.0013Ohm
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
153 mJ
Feedback Cap-Max (Crss)
250 pF
Turn Off Time-Max (toff)
75ns
Turn On Time-Max (ton)
42ns
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMC8010ET30 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 153 mJ.The maximum input capacitance of this device is 5860pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 174A.As shown in the table below, the drain current of this device is 30A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

FDMC8010ET30 Features
the avalanche energy rating (Eas) is 153 mJ
a continuous drain current (ID) of 174A
a 30V drain to source voltage (Vdss)

FDMC8010ET30 Applications
There are a lot of ON Semiconductor
FDMC8010ET30 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

FDMC8010ET30 More Descriptions

N-Channel PowerTrench® MOSFET 30V, 174A, 1.3mΩ
MOSFET, N-CH, 30V, 174A, 65W, POWER 33; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:30V; On Resistance
Power Field-Effect Transistor, 174A I(D), 174V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.

Product Comparison

The three parts on the right have similar specifications to FDMC8010ET30.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Reach Compliance Code

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Feedback Cap-Max (Crss)

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

RoHS Status

Lead Free

Published

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Resistance

Number of Channels

Max Junction Temperature (Tj)

View Compare
FDMC8010ET30

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

12 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

8

152.7mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

ULTRA LOW RESISTANCE

MOSFET (Metal Oxide)

DUAL

NO LEAD

not_compliant

S-PDSO-N5

1

2.8W Ta 65W Tc

Single

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.3m Ω @ 30A, 10V

2.5V @ 1mA

5860pF @ 15V

30A Ta 174A Tc

94nC @ 10V

30V

4.5V 10V

±20V

174A

MO-240BA

30A

0.0013Ohm

30V

153 mJ

250 pF

75ns

42ns

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMC7660

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

10 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

-

MOSFET (Metal Oxide)

DUAL

NO LEAD

not_compliant

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.2m Ω @ 20A, 10V

2.5V @ 250μA

4830pF @ 15V

20A Ta 40A Tc

86nC @ 10V

-

4.5V 10V

±20V

20A

MO-240BA

-

0.0022Ohm

-

200 mJ

-

-

-

ROHS3 Compliant

Lead Free

2009

FET General Purpose Power

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

2.3W

14 ns

6.8ns

5.7 ns

36 ns

1.7V

20V

30V

200A

1.7 V

1.05mm

3.3mm

3.3mm

No SVHC

-

-

-

-

FDMC8010ET30 vs FDMC7660
FDMC86244

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 18 hours ago)

12 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

8

180mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

-

MOSFET (Metal Oxide)

DUAL

-

-

S-PDSO-N5

1

2.3W Ta 26W Tc

Single

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

134m Ω @ 2.8A, 10V

4V @ 250μA

345pF @ 75V

2.8A Ta 9.4A Tc

5.9nC @ 10V

-

6V 10V

±20V

9.4A

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

2006

FET General Purpose Power

-

-

-

26W

5.3 ns

1.5ns

2.3 ns

9.9 ns

2.6V

20V

150V

-

2.6 V

750μm

3.3mm

3.3mm

No SVHC

No

-

-

-

FDMC8010ET30 vs FDMC86244
FDMC8651

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

34 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

Nickel/Palladium (Ni/Pd)

-

MOSFET (Metal Oxide)

DUAL

NO LEAD

-

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6.1m Ω @ 15A, 4.5V

1.5V @ 250μA

3365pF @ 15V

15A Ta 20A Tc

27.2nC @ 4.5V

-

2.5V 4.5V

±12V

15A

-

64A

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

FET General Purpose Power

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

2.3W

18 ns

9ns

6 ns

35 ns

800mV

12V

30V

60A

1.1 V

1.05mm

3.3mm

3.3mm

No SVHC

-

6.1MOhm

1

150°C

FDMC8010ET30 vs FDMC8651

Certification

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FDMC8010ET30 Specification

Part Number	Manufacturers	Description	Stock	Price
FDMC8010ET30 DISTI #V72:2272_16119273	ON Semiconductor	N-CHANNEL POWERTRENCH MOSFET,	5628	1 $1.8659 10 $1.4412 25 $1.2971 100 $1.1555 250 $1.1096 500 $0.9725 1000 $0.8323 3000 $0.7974
FDMC8010ET30 DISTI #V36:1790_16119273	ON Semiconductor	N-CHANNEL POWERTRENCH MOSFET,	0	3000 $0.8206 30000 $0.8057 300000 $0.7193 1500000 $0.6747 3000000 $0.6743
FDMC8010ET30 DISTI #FDMC8010ET30CT-ND	ON Semiconductor	MOSFET N-CH 30V 30A 8-PQFN RoHS: Compliant	2358	1 $1.85 10 $1.659 100 $1.3336 500 $1.09564 1000 $0.90782
FDMC8010ET30 DISTI #FDMC8010ET30DKR-ND	ON Semiconductor	MOSFET N-CH 30V 30A 8-PQFN RoHS: Compliant	2358	1 $1.85 10 $1.659 100 $1.3336 500 $1.09564 1000 $0.90782
FDMC8010ET30 DISTI #FDMC8010ET30TR-ND	ON Semiconductor	MOSFET N-CH 30V 30A 8-PQFN RoHS: Compliant	0	3000 $0.82059 6000 $0.7902
FDMC8010ET30 DISTI #26623752	ON Semiconductor	N-CHANNEL POWERTRENCH MOSFET,	9000	3000 $0.7742 6000 $0.7455 9000 $0.7346
FDMC8010ET30 DISTI #25924334	ON Semiconductor	N-CHANNEL POWERTRENCH MOSFET,	5628	8 $1.8659 10 $1.4412 25 $1.2971 100 $1.1555 250 $1.1096 500 $0.9725 1000 $0.8323 3000 $0.7974
FDMC8010ET30 DISTI #FDMC8010ET30	ON Semiconductor	MOSFET N-Channel PowerTrench MOSFET, PowerClip 33 RoHS: Compliant	0	3000 $0.7559 6000 $0.7509 12000 $0.7419 18000 $0.7319 30000 $0.7139
FDMC8010ET30 DISTI #FDMC8010ET30	ON Semiconductor	MOSFET N-Channel PowerTrench MOSFET, PowerClip 33 RoHS: Compliant	0	3000 $1.0479 6000 $0.8719 12000 $0.8059 18000 $0.7739 30000 $0.7319
FDMC8010ET30 DISTI #01AC8546	ON Semiconductor	FET 30V 1.3 MOHM PQFN33 / REEL	0	1 $1.66 100 $1.34 250 $1.21 500 $1.12 1000 $1.04
FDMC8010ET30 DISTI #512-FDMC8010ET30	ON Semiconductor	MOSFET FET 30V 1.3 MOHM PQFN33 RoHS: Compliant	7876	1 $1.71 10 $1.45 100 $1.16 500 $1.02 1000 $0.84 3000 $0.782 6000 $0.753 9000 $0.724
FDMC8010ET30 DISTI #2992330	ON Semiconductor	MOSFET, N-CH, 30V, 174A, 65W, POWER 33	3000	1 $1.41 10 $1.09 100 $0.838 250 $0.789 500 $0.739
FDMC8010ET30 DISTI #XSFP00000116121	Fairchild Semiconductor Corporation	RoHS: Compliant	24000	3000 $1.1 24000 $1.03
FDMC8010ET30 DISTI #2992330	ON Semiconductor	MOSFET, N-CH, 30V, 174A, 65W, POWER 33 RoHS: Compliant	3000	5 $2.16 25 $1.95 100 $1.53 250 $1.42 500 $1.31 1000 $1.11

FDMC801~~(2)~~
FDMC80~~(6)~~
FDMC8~~(67)~~
FDMC~~(78)~~
FDM~~(86)~~

Fairchild/ON Semiconductor FDMC8010ET30

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