Fairchild/ON Semiconductor FDMC6688P
- Part Number:
- FDMC6688P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481545-FDMC6688P
- Description:
- MOSFET P-CH 20V POWER33
- Datasheet:
- FDMC6688P
Fairchild/ON Semiconductor FDMC6688P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC6688P.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight26.8mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Power Dissipation-Max2.3W Ta 30W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.5m Ω @ 14A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7435pF @ 10V
- Current - Continuous Drain (Id) @ 25°C14A Ta 56A Tc
- Gate Charge (Qg) (Max) @ Vgs61nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Continuous Drain Current (ID)56A
- JEDEC-95 CodeMO-240BA
- Drain Current-Max (Abs) (ID)14A
- Drain-source On Resistance-Max0.0065Ohm
- Pulsed Drain Current-Max (IDM)226A
- DS Breakdown Voltage-Min20V
- RoHS StatusROHS3 Compliant
FDMC6688P Description
FDMC6688P is a P-Channel PowerTrench? MOSFET. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced PowerTrench@ process that has been optimized for rDs(ON), switching performance, and ruggedness. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been optimized for rDs(ON), switching performance, and ruggedness.
FDMC6688P Features
Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A
Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A
High-performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Lead-free and RoHS Compliant
FDMC6688P Applications
Load Switch
Battery Management
Power Management
Reverse Polarity Protection
FDMC6688P is a P-Channel PowerTrench? MOSFET. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced PowerTrench@ process that has been optimized for rDs(ON), switching performance, and ruggedness. This P-Channel MOSFET FDMC6688P is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been optimized for rDs(ON), switching performance, and ruggedness.
FDMC6688P Features
Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A
Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A
High-performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Lead-free and RoHS Compliant
FDMC6688P Applications
Load Switch
Battery Management
Power Management
Reverse Polarity Protection
FDMC6688P More Descriptions
PT8P 20_8V from vanguard - 8LD, PQFN, JEDEC, MO-240 VARIATION BA, 3.3X3.3 MM, WIRED
MOSFET P-CH 20V POWER33 / Trans MOSFET P-CH 20V 14A 8-Pin Power 33 EP T/R
P-Channel PowerTrench® MOSFET -20V, -56A, 6.5mΩ
MOSFET, P-CH, -20V, -56A, 30W, POWER 33; Transistor Polarity: P Channel; Continuous Drain Current Id: -56A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0053ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage
Power Field-Effect Transistor, 14A I(D), 20V, 0.0065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
MOSFET P-CH 20V POWER33 / Trans MOSFET P-CH 20V 14A 8-Pin Power 33 EP T/R
P-Channel PowerTrench® MOSFET -20V, -56A, 6.5mΩ
MOSFET, P-CH, -20V, -56A, 30W, POWER 33; Transistor Polarity: P Channel; Continuous Drain Current Id: -56A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0053ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage
Power Field-Effect Transistor, 14A I(D), 20V, 0.0065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
The three parts on the right have similar specifications to FDMC6688P.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusPublishedSubcategoryQualification StatusPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCLead FreeRadiation HardeningResistanceAdditional FeatureView Compare
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FDMC6688PACTIVE (Last Updated: 5 days ago)10 WeeksSurface MountSurface Mount8-PowerWDFN826.8mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99Tin (Sn)MOSFET (Metal Oxide)DUALNO LEAD260not_compliantNOT SPECIFIEDS-PDSO-N512.3W Ta 30W TcSingleENHANCEMENT MODEDRAINP-ChannelSWITCHING6.5m Ω @ 14A, 4.5V1V @ 250μA7435pF @ 10V14A Ta 56A Tc61nC @ 4.5V20V1.8V 4.5V±8V56AMO-240BA14A0.0065Ohm226A20VROHS3 Compliant----------------------
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ACTIVE (Last Updated: 6 days ago)10 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99Tin (Sn)MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDS-PDSO-N512.3W Ta 41W TcSingleENHANCEMENT MODEDRAINN-ChannelSWITCHING2.2m Ω @ 20A, 10V2.5V @ 250μA4830pF @ 15V20A Ta 40A Tc86nC @ 10V-4.5V 10V±20V20AMO-240BA-0.0022Ohm200A-ROHS3 Compliant2009FET General Purpose PowerNot Qualified2.3W14 ns6.8ns5.7 ns36 ns1.7V20V30V200 mJ1.7 V1.05mm3.3mm3.3mmNo SVHCLead Free---
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ACTIVE (Last Updated: 18 hours ago)12 WeeksSurface MountSurface Mount8-PowerWDFN8180mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)DUAL----S-PDSO-N512.3W Ta 26W TcSingleENHANCEMENT MODEDRAINN-ChannelSWITCHING134m Ω @ 2.8A, 10V4V @ 250μA345pF @ 75V2.8A Ta 9.4A Tc5.9nC @ 10V-6V 10V±20V9.4A-----ROHS3 Compliant2006FET General Purpose Power-26W5.3 ns1.5ns2.3 ns9.9 ns2.6V20V150V-2.6 V750μm3.3mm3.3mmNo SVHCLead FreeNo--
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ACTIVE (Last Updated: 5 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8200mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)DUAL----S-PDSO-N512.3W Ta 36W TcSingleENHANCEMENT MODEDRAINP-ChannelSWITCHING14.4m Ω @ 9.5A, 10V3V @ 250μA2865pF @ 15V9.5A Ta 20A Tc65nC @ 10V30V4.5V 10V±25V9.5A-40A-32A-ROHS3 Compliant2010Other Transistors-2.3W11 ns10ns26 ns44 ns-1.9V25V-30V--750μm3.3mm3.3mmNo SVHCLead FreeNo14.4MOhmULTRA-LOW RESISTANCE
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