FDMC2514SDC

Fairchild/ON Semiconductor FDMC2514SDC

Part Number:
FDMC2514SDC
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2479977-FDMC2514SDC
Description:
MOSFET N-CH 25V 40A POWER33
ECAD Model:
Datasheet:
FDMC2514SDC

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Specifications
Fairchild/ON Semiconductor FDMC2514SDC technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC2514SDC.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    32.13mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Dual Cool™, PowerTrench®, SyncFET™
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    3W Ta 60W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Case Connection
    DRAIN SOURCE
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.5m Ω @ 22.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2705pF @ 13V
  • Current - Continuous Drain (Id) @ 25°C
    24A Ta 40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    44nC @ 10V
  • Rise Time
    3.6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    26 ns
  • Continuous Drain Current (ID)
    24A
  • Threshold Voltage
    1.7V
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    40A
  • Drain-source On Resistance-Max
    0.0035Ohm
  • Drain to Source Breakdown Voltage
    25V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Nominal Vgs
    1.7 V
  • Height
    950μm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMC2514SDC Description This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench? process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the  added benefit of an efficient monolithic Schottky body diode.
FDMC2514SDC Features Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A High-performance technology for extremely low RDS(on) SyncFET Schottky Body Diode RoHS Compliant
FDMC2514SDC Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side
FDMC2514SDC More Descriptions
N-Channel PowerTrench® SyncFET™, Dual Cool™ 33, 25V, 40A, 3.5mΩ
Power Field-Effect Transistor, 24A I(D), 25V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
Clock/Timing - Clock Buffers, Drivers 20-TSSOP (0.173, 4.40mm Width) 1 (Unlimited) LVCMOS, LVTTL 1 Tape & Reel (TR) 266MHz IC CLK BUFFER 2:4 266MHZ 20TSSOP
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Product Comparison
The three parts on the right have similar specifications to FDMC2514SDC.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Avalanche Energy Rating (Eas)
    Lead Free
    Resistance
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDMC2514SDC
    FDMC2514SDC
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Dual Cool™, PowerTrench®, SyncFET™
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    S-PDSO-N5
    1
    3W Ta 60W Tc
    Single
    ENHANCEMENT MODE
    3W
    DRAIN SOURCE
    11 ns
    N-Channel
    SWITCHING
    3.5m Ω @ 22.5A, 10V
    3V @ 1mA
    2705pF @ 13V
    24A Ta 40A Tc
    44nC @ 10V
    3.6ns
    4.5V 10V
    ±20V
    3 ns
    26 ns
    24A
    1.7V
    MO-240BA
    20V
    40A
    0.0035Ohm
    25V
    200A
    1.7 V
    950μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC7660
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    2.2m Ω @ 20A, 10V
    2.5V @ 250μA
    4830pF @ 15V
    20A Ta 40A Tc
    86nC @ 10V
    6.8ns
    4.5V 10V
    ±20V
    5.7 ns
    36 ns
    20A
    1.7V
    MO-240BA
    20V
    -
    0.0022Ohm
    30V
    200A
    1.7 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    -
    ROHS3 Compliant
    DUAL
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    200 mJ
    Lead Free
    -
    -
    -
  • FDMC86102
    ACTIVE (Last Updated: 1 week ago)
    40 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    6V 10V
    ±20V
    4 ns
    14 ns
    20A
    3.1V
    MO-240BA
    20V
    7A
    -
    100V
    30A
    3.1 V
    950μm
    3.4mm
    3.4mm
    No SVHC
    No
    ROHS3 Compliant
    DUAL
    -
    -
    -
    -
    -
    72 mJ
    Lead Free
    24MOhm
    -
    -
  • FDMC8651
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    9ns
    2.5V 4.5V
    ±12V
    6 ns
    35 ns
    15A
    800mV
    -
    12V
    64A
    -
    30V
    60A
    1.1 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    -
    ROHS3 Compliant
    DUAL
    NO LEAD
    NOT SPECIFIED
    -
    NOT SPECIFIED
    Not Qualified
    -
    Lead Free
    6.1MOhm
    1
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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