Fairchild/ON Semiconductor FDMC2514SDC
- Part Number:
- FDMC2514SDC
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2479977-FDMC2514SDC
- Description:
- MOSFET N-CH 25V 40A POWER33
- Datasheet:
- FDMC2514SDC
Fairchild/ON Semiconductor FDMC2514SDC technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC2514SDC.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight32.13mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesDual Cool™, PowerTrench®, SyncFET™
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Power Dissipation-Max3W Ta 60W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Case ConnectionDRAIN SOURCE
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5m Ω @ 22.5A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2705pF @ 13V
- Current - Continuous Drain (Id) @ 25°C24A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
- Rise Time3.6ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)24A
- Threshold Voltage1.7V
- JEDEC-95 CodeMO-240BA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)40A
- Drain-source On Resistance-Max0.0035Ohm
- Drain to Source Breakdown Voltage25V
- Pulsed Drain Current-Max (IDM)200A
- Nominal Vgs1.7 V
- Height950μm
- Length3.3mm
- Width3.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDMC2514SDC Description
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench? process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
FDMC2514SDC Features Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A High-performance technology for extremely low RDS(on) SyncFET Schottky Body Diode RoHS Compliant
FDMC2514SDC Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side
FDMC2514SDC Features Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A High-performance technology for extremely low RDS(on) SyncFET Schottky Body Diode RoHS Compliant
FDMC2514SDC Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side
FDMC2514SDC More Descriptions
N-Channel PowerTrench® SyncFET™, Dual Cool™ 33, 25V, 40A, 3.5mΩ
Power Field-Effect Transistor, 24A I(D), 25V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
Clock/Timing - Clock Buffers, Drivers 20-TSSOP (0.173, 4.40mm Width) 1 (Unlimited) LVCMOS, LVTTL 1 Tape & Reel (TR) 266MHz IC CLK BUFFER 2:4 266MHZ 20TSSOP
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Power Field-Effect Transistor, 24A I(D), 25V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
Clock/Timing - Clock Buffers, Drivers 20-TSSOP (0.173, 4.40mm Width) 1 (Unlimited) LVCMOS, LVTTL 1 Tape & Reel (TR) 266MHz IC CLK BUFFER 2:4 266MHZ 20TSSOP
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
The three parts on the right have similar specifications to FDMC2514SDC.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusAvalanche Energy Rating (Eas)Lead FreeResistanceNumber of ChannelsMax Junction Temperature (Tj)View Compare
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FDMC2514SDCACTIVE (Last Updated: 4 days ago)8 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)Dual Cool™, PowerTrench®, SyncFET™2009e3yesActive1 (Unlimited)5EAR99Tin (Sn)ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)S-PDSO-N513W Ta 60W TcSingleENHANCEMENT MODE3WDRAIN SOURCE11 nsN-ChannelSWITCHING3.5m Ω @ 22.5A, 10V3V @ 1mA2705pF @ 13V24A Ta 40A Tc44nC @ 10V3.6ns4.5V 10V±20V3 ns26 ns24A1.7VMO-240BA20V40A0.0035Ohm25V200A1.7 V950μm3.3mm3.3mmNo SVHCNoROHS3 Compliant------------
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ACTIVE (Last Updated: 6 days ago)10 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2009e3yesActive1 (Unlimited)5EAR99Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)S-PDSO-N512.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN14 nsN-ChannelSWITCHING2.2m Ω @ 20A, 10V2.5V @ 250μA4830pF @ 15V20A Ta 40A Tc86nC @ 10V6.8ns4.5V 10V±20V5.7 ns36 ns20A1.7VMO-240BA20V-0.0022Ohm30V200A1.7 V1.05mm3.3mm3.3mmNo SVHC-ROHS3 CompliantDUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified200 mJLead Free---
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ACTIVE (Last Updated: 1 week ago)40 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)-FET General Purpose PowerMOSFET (Metal Oxide)S-PDSO-N512.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN8 nsN-ChannelSWITCHING24m Ω @ 7A, 10V4V @ 250μA965pF @ 50V7A Ta 20A Tc18nC @ 10V4ns6V 10V±20V4 ns14 ns20A3.1VMO-240BA20V7A-100V30A3.1 V950μm3.4mm3.4mmNo SVHCNoROHS3 CompliantDUAL-----72 mJLead Free24MOhm--
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ACTIVE (Last Updated: 1 day ago)34 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)-FET General Purpose PowerMOSFET (Metal Oxide)S-PDSO-N512.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN18 nsN-ChannelSWITCHING6.1m Ω @ 15A, 4.5V1.5V @ 250μA3365pF @ 15V15A Ta 20A Tc27.2nC @ 4.5V9ns2.5V 4.5V±12V6 ns35 ns15A800mV-12V64A-30V60A1.1 V1.05mm3.3mm3.3mmNo SVHC-ROHS3 CompliantDUALNO LEADNOT SPECIFIED-NOT SPECIFIEDNot Qualified-Lead Free6.1MOhm1150°C
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