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CSD19531Q5AT

Texas Instruments CSD19531Q5AT

Part Number:
CSD19531Q5AT
Manufacturer:
Texas Instruments
Ventron No:
2849006-CSD19531Q5AT
Description:
100-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm
ECAD Model:
Datasheet:
csd19531q5a

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Specifications
Texas Instruments CSD19531Q5AT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD19531Q5AT.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD19531
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.3W Ta 125W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6.4m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    3.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3870pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    100A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    48nC @ 10V
  • Rise Time
    5.8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5.2 ns
  • Turn-Off Delay Time
    18.4 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    2.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    337A
  • Height
    1.1mm
  • Length
    4.9mm
  • Width
    6mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD19531Q5AT Description
CSD19531Q5AT emerges as an N-Channel NexFET? Power MOSFET featuring ultra-low Qg and Qgd, and low thermal resistance. As a result, it is well suited for motor control, DC-DC conversion, synchronous rectification, and isolated converter primary-side switch.

CSD19531Q5AT Features
Logic level
Ultra-low Qg and Qgd
Low-thermal resistance
Available in the SON plastic package

CSD19531Q5AT Applications
Motor control
Primary side telecom
Secondary side synchronous rectifier
CSD19531Q5AT More Descriptions
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150
Trans MOSFET N-CH 100V 100A 8-Pin VSON-FET EP T/R
TEXAS INSTRUMENTS CSD19531Q5ATMOSFET Transistor, N Channel, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
Power Field-Effect Transistor, 16A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Channel, 100V, 100A, Vson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD19531Q5AT
Product Comparison
The three parts on the right have similar specifications to CSD19531Q5AT.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    Thickness
    REACH SVHC
    RoHS Status
    Lead Free
    Terminal Finish
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Surface Mount
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Pin Count
    View Compare
  • CSD19531Q5AT
    CSD19531Q5AT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD19531
    1
    1
    3.3W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    6 ns
    N-Channel
    SWITCHING
    6.4m Ω @ 16A, 10V
    3.3V @ 250μA
    3870pF @ 50V
    100A Ta
    48nC @ 10V
    5.8ns
    6V 10V
    ±20V
    5.2 ns
    18.4 ns
    100A
    2.7V
    20V
    100V
    337A
    1.1mm
    4.9mm
    6mm
    1mm
    No SVHC
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD16570Q5B
    CSD16570Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD16570
    1
    -
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    5 ns
    N-Channel
    -
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    43ns
    4.5V 10V
    ±20V
    72 ns
    156 ns
    100A
    -
    20V
    -
    400A
    -
    5mm
    6mm
    950μm
    -
    ROHS3 Compliant
    Contains Lead
    Matte Tin (Sn)
    25V
    59A
    25V
    1290 pF
    -
    -
    -
    -
    CSD19531Q5AT vs CSD16570Q5B
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    -
    not_compliant
    -
    CSD18512
    1
    -
    139W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    400A
    -
    5mm
    6mm
    950μm
    -
    ROHS3 Compliant
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    40V
    32A
    40V
    333 pF
    YES
    0.0023Ohm
    205 mJ
    -
    CSD19531Q5AT vs CSD18512Q5B
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17484
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    -
    12V
    -
    -
    -
    1.035mm
    635μm
    200μm
    -
    ROHS3 Compliant
    Lead Free
    -
    30V
    3A
    -
    2.9 pF
    -
    0.27Ohm
    -
    3
    CSD19531Q5AT vs CSD17484F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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