Texas Instruments CSD18533Q5A
- Part Number:
- CSD18533Q5A
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2849733-CSD18533Q5A
- Description:
- 60-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm
- Datasheet:
- csd18533q5a
Texas Instruments CSD18533Q5A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18533Q5A.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Base Part NumberCSD18533
- Number of Elements1
- Power Dissipation-Max3.2W Ta 116W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.2W
- Case ConnectionDRAIN
- Turn On Delay Time5.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.9m Ω @ 18A, 10V
- Vgs(th) (Max) @ Id2.3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2750pF @ 30V
- Current - Continuous Drain (Id) @ 25°C17A Ta 100A Tc
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Rise Time5.5ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)2 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)100A
- Threshold Voltage1.9V
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min60V
- Nominal Vgs1.9 V
- Feedback Cap-Max (Crss)9 pF
- Height1.1mm
- Length4.9mm
- Width6mm
- Thickness1mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
CSD18533Q5A Overview
The maximum input capacitance of this device is 2750pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.9V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
CSD18533Q5A Features
a continuous drain current (ID) of 100A
the turn-off delay time is 15 ns
a threshold voltage of 1.9V
a 60V drain to source voltage (Vdss)
CSD18533Q5A Applications
There are a lot of Texas Instruments
CSD18533Q5A applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 2750pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.9V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
CSD18533Q5A Features
a continuous drain current (ID) of 100A
the turn-off delay time is 15 ns
a threshold voltage of 1.9V
a 60V drain to source voltage (Vdss)
CSD18533Q5A Applications
There are a lot of Texas Instruments
CSD18533Q5A applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
CSD18533Q5A More Descriptions
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm 8-VSONP -55 to 150
MOSFET, N-CH, 60V, 100A, VSON-8; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 60V; Résistance Rds(on): 0.0047ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.9V; Dissipation de puissance Pd
Mosfet, N-Ch, 60V, 100A, Vson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0047Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18533Q5A
MOSFET, N-CH, 60V, 100A, VSON-8; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 60V; Résistance Rds(on): 0.0047ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.9V; Dissipation de puissance Pd
Mosfet, N-Ch, 60V, 100A, Vson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0047Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18533Q5A
The three parts on the right have similar specifications to CSD18533Q5A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Base Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)DS Breakdown Voltage-MinNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthThicknessREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FormPin CountDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxNumber of ChannelsMax Junction Temperature (Tj)Surface MountView Compare
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CSD18533Q5AACTIVE (Last Updated: 3 days ago)6 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowersMOSFET (Metal Oxide)DUAL260CSD1853313.2W Ta 116W TcSingleENHANCEMENT MODE3.2WDRAIN5.2 nsN-ChannelSWITCHING5.9m Ω @ 18A, 10V2.3V @ 250μA2750pF @ 30V17A Ta 100A Tc36nC @ 10V5.5ns60V4.5V 10V±20V2 ns15 ns100A1.9V20V60V1.9 V9 pF1.1mm4.9mm6mm1mmNo SVHCNoROHS3 CompliantContains Lead--------
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ACTIVE (Last Updated: 1 day ago)6 WeeksSurface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3EAR99---MOSFET (Metal Oxide)BOTTOM-CSD174841500mW TaSingleENHANCEMENT MODE--3 nsN-ChannelSWITCHING121m Ω @ 500mA, 8V1.1V @ 250μA195pF @ 15V3A Ta1.2nC @ 4.5V1ns30V1.8V 8V-4 ns11 ns3A-12V--2.9 pF-1.035mm635μm200μm--ROHS3 CompliantLead FreeNO LEAD33A0.27Ohm---
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ACTIVE (Last Updated: 1 day ago)6 WeeksSurface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3EAR99---MOSFET (Metal Oxide)BOTTOM-CSD173821500mW TaSingleENHANCEMENT MODE500mWDRAIN59 nsN-ChannelSWITCHING64m Ω @ 500mA, 8V1.2V @ 250μA347pF @ 15V2.3A Ta2.7nC @ 4.5V-30V1.8V 8V--279 ns2.3A-10V---350μm1.035mm635μm---ROHS3 CompliantLead FreeNO LEAD---1150°C-
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ACTIVE (Last Updated: 2 days ago)6 Weeks-Surface Mount3-SMD, No Lead3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3EAR99---MOSFET (Metal Oxide)BOTTOM-CSD133801500mW TaSingleENHANCEMENT MODE---N-ChannelSWITCHING76m Ω @ 400mA, 4.5V1.3V @ 250μA156pF @ 6V3.6A Ta1.2nC @ 4.5V-12V1.8V 4.5V8V-----12V-12.5 pF-690μm600μm345μm--ROHS3 Compliant---2.1A0.092Ohm--YES
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