CSD18533Q5A

Texas Instruments CSD18533Q5A

Part Number:
CSD18533Q5A
Manufacturer:
Texas Instruments
Ventron No:
2849733-CSD18533Q5A
Description:
60-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm
ECAD Model:
Datasheet:
csd18533q5a

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Specifications
Texas Instruments CSD18533Q5A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18533Q5A.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD18533
  • Number of Elements
    1
  • Power Dissipation-Max
    3.2W Ta 116W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    5.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.9m Ω @ 18A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2750pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    17A Ta 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    36nC @ 10V
  • Rise Time
    5.5ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    1.9V
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    60V
  • Nominal Vgs
    1.9 V
  • Feedback Cap-Max (Crss)
    9 pF
  • Height
    1.1mm
  • Length
    4.9mm
  • Width
    6mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD18533Q5A Overview
The maximum input capacitance of this device is 2750pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.9V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

CSD18533Q5A Features
a continuous drain current (ID) of 100A
the turn-off delay time is 15 ns
a threshold voltage of 1.9V
a 60V drain to source voltage (Vdss)


CSD18533Q5A Applications
There are a lot of Texas Instruments
CSD18533Q5A applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
CSD18533Q5A More Descriptions
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm 8-VSONP -55 to 150
MOSFET, N-CH, 60V, 100A, VSON-8; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 60V; Résistance Rds(on): 0.0047ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.9V; Dissipation de puissance Pd
Mosfet, N-Ch, 60V, 100A, Vson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0047Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18533Q5A
Product Comparison
The three parts on the right have similar specifications to CSD18533Q5A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Form
    Pin Count
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Number of Channels
    Max Junction Temperature (Tj)
    Surface Mount
    View Compare
  • CSD18533Q5A
    CSD18533Q5A
    ACTIVE (Last Updated: 3 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD18533
    1
    3.2W Ta 116W Tc
    Single
    ENHANCEMENT MODE
    3.2W
    DRAIN
    5.2 ns
    N-Channel
    SWITCHING
    5.9m Ω @ 18A, 10V
    2.3V @ 250μA
    2750pF @ 30V
    17A Ta 100A Tc
    36nC @ 10V
    5.5ns
    60V
    4.5V 10V
    ±20V
    2 ns
    15 ns
    100A
    1.9V
    20V
    60V
    1.9 V
    9 pF
    1.1mm
    4.9mm
    6mm
    1mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17484F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    30V
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    -
    12V
    -
    -
    2.9 pF
    -
    1.035mm
    635μm
    200μm
    -
    -
    ROHS3 Compliant
    Lead Free
    NO LEAD
    3
    3A
    0.27Ohm
    -
    -
    -
  • CSD17382F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    30V
    1.8V 8V
    -
    -
    279 ns
    2.3A
    -
    10V
    -
    -
    -
    350μm
    1.035mm
    635μm
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    NO LEAD
    -
    -
    -
    1
    150°C
    -
  • CSD13380F3
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD13380
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    12V
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    12V
    -
    12.5 pF
    -
    690μm
    600μm
    345μm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    2.1A
    0.092Ohm
    -
    -
    YES
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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