CSD17585F5

Texas Instruments CSD17585F5

Part Number:
CSD17585F5
Manufacturer:
Texas Instruments
Ventron No:
3586338-CSD17585F5
Description:
30-V, N channel NexFET? power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection
ECAD Model:
Datasheet:
csd17585f5

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Specifications
Texas Instruments CSD17585F5 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17585F5.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    3-SMD, No Lead
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    FemtoFET™
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Base Part Number
    CSD17585
  • Number of Elements
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 900mA, 10V
  • Vgs(th) (Max) @ Id
    1.7V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    380pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.9A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.1nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    20V
  • Feedback Cap-Max (Crss)
    7.4 pF
  • Length
    1.49mm
  • Width
    730μm
  • Thickness
    338μm
  • RoHS Status
    ROHS3 Compliant
Description
CSD17585F5 Overview
The maximum input capacitance of this device is 380pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

CSD17585F5 Features
a 30V drain to source voltage (Vdss)


CSD17585F5 Applications
There are a lot of Texas Instruments
CSD17585F5 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
CSD17585F5 More Descriptions
30-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 33 mOhm, gate ESD protection
Trans MOSFET N-CH 30V 5.9A 3-Pin PicoStar T/R
MOSFET N-CH 30V 5.9A 3PICOSTAR
Product Comparison
The three parts on the right have similar specifications to CSD17585F5.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Feedback Cap-Max (Crss)
    Length
    Width
    Thickness
    RoHS Status
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Terminal Form
    Reach Compliance Code
    Case Connection
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Mount
    Number of Channels
    Power Dissipation
    Turn On Delay Time
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Junction Temperature (Tj)
    Height
    Lead Free
    View Compare
  • CSD17585F5
    CSD17585F5
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    3-SMD, No Lead
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    CSD17585
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    27m Ω @ 900mA, 10V
    1.7V @ 250μA
    380pF @ 15V
    5.9A Ta
    5.1nC @ 10V
    30V
    4.5V 10V
    20V
    7.4 pF
    1.49mm
    730μm
    338μm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD18512Q5B
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    Surface Mount
    8-PowerTDFN
    YES
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    CSD18512
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    40V
    4.5V 10V
    ±20V
    333 pF
    5mm
    6mm
    950μm
    ROHS3 Compliant
    e4
    Nickel/Palladium/Gold (Ni/Pd/Au)
    AVALANCHE RATED
    NO LEAD
    not_compliant
    DRAIN
    32A
    0.0023Ohm
    400A
    40V
    205 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17382F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    30V
    1.8V 8V
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    -
    -
    -
    NO LEAD
    -
    DRAIN
    -
    -
    -
    -
    -
    Surface Mount
    1
    500mW
    59 ns
    279 ns
    2.3A
    10V
    150°C
    350μm
    Lead Free
  • CSD13380F3
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    3-SMD, No Lead
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    CSD13380
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    12V
    1.8V 4.5V
    8V
    12.5 pF
    690μm
    600μm
    345μm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    2.1A
    0.092Ohm
    -
    12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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