Texas Instruments CSD17581Q3A
- Part Number:
- CSD17581Q3A
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2485382-CSD17581Q3A
- Description:
- 30-V, N channel NexFET? power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm
- Datasheet:
- csd17581q3a
Texas Instruments CSD17581Q3A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17581Q3A.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Surface MountYES
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Base Part NumberCSD17581
- Number of Elements1
- Power Dissipation-Max2.8W Ta 63W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.8m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id1.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3640pF @ 15V
- Current - Continuous Drain (Id) @ 25°C21A Ta
- Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)21A
- Drain-source On Resistance-Max0.0047Ohm
- Pulsed Drain Current-Max (IDM)154A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)76 mJ
- Feedback Cap-Max (Crss)195 pF
- Length3.3mm
- Width3.3mm
- Thickness800μm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CSD17581Q3A Description
CSD17581Q3A is an N-channel Power MOSFET transistor from the manufacturer Texas Instrument with a voltage of 20V. The operating temperature of CSD17581Q3A is -55°C~150°C TJ and its maximum power dissipation is 63W Tc. This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET? power MOSFET is designed to minimize losses in power conversion applications.
CSD17581Q3A Features
Low Qg and Qgd
Low RDS(on)
Low Thermal Resistance
Avalanche Rated
Lead-Free
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package
CSD17581Q3A Applications
Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Motor Control Applications
Optimized for Control FET Applications
CSD17581Q3A is an N-channel Power MOSFET transistor from the manufacturer Texas Instrument with a voltage of 20V. The operating temperature of CSD17581Q3A is -55°C~150°C TJ and its maximum power dissipation is 63W Tc. This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET? power MOSFET is designed to minimize losses in power conversion applications.
CSD17581Q3A Features
Low Qg and Qgd
Low RDS(on)
Low Thermal Resistance
Avalanche Rated
Lead-Free
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package
CSD17581Q3A Applications
Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Motor Control Applications
Optimized for Control FET Applications
CSD17581Q3A More Descriptions
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm 8-VSONP -55 to 150
30V N CH MOSFET / 30-V N-Channel NexFET Power MOSFETs
Power Field-Effect Transistor, 21A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
30V N CH MOSFET / 30-V N-Channel NexFET Power MOSFETs
Power Field-Effect Transistor, 21A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to CSD17581Q3A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormBase Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Feedback Cap-Max (Crss)LengthWidthThicknessRoHS StatusLead FreeContact PlatingMountPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Number of ChannelsMax Junction Temperature (Tj)HeightView Compare
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CSD17581Q3AACTIVE (Last Updated: 2 days ago)6 WeeksSurface Mount8-PowerVDFNYES8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)AVALANCHE RATEDMOSFET (Metal Oxide)DUALFLATCSD1758112.8W Ta 63W TcSingleENHANCEMENT MODEDRAINN-ChannelSWITCHING3.8m Ω @ 16A, 10V1.7V @ 250μA3640pF @ 15V21A Ta54nC @ 10V30V4.5V 10V±20V21A0.0047Ohm154A30V76 mJ195 pF3.3mm3.3mm800μmROHS3 CompliantLead Free----------------
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ACTIVE (Last Updated: 5 days ago)6 WeeksSurface Mount8-PowerTDFN-8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99-AVALANCHE RATEDMOSFET (Metal Oxide)DUALNO LEADCSD1757613.1W Ta 125W TcSingleENHANCEMENT MODEDRAINN-ChannelSWITCHING2m Ω @ 25A, 10V1.8V @ 250μA4430pF @ 15V100A Ta32nC @ 4.5V30V4.5V 10V±20V30A0.0029Ohm400A30V--5mm6mm950μmROHS3 CompliantContains LeadGoldSurface Mount260not_compliantNOT SPECIFIED3.1W5 ns16ns3 ns23 ns100A20V---
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ACTIVE (Last Updated: 1 day ago)12 WeeksSurface Mount8-PowerTDFN-8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)AVALANCHE RATEDMOSFET (Metal Oxide)DUALNO LEADCSD1657013.2W Ta 195W TcSingleENHANCEMENT MODEDRAINN-Channel-0.59m Ω @ 50A, 10V1.9V @ 250μA14000pF @ 12V100A Ta250nC @ 10V25V4.5V 10V±20V59A-400A25V-1290 pF5mm6mm950μmROHS3 CompliantContains LeadGoldSurface Mount260not_compliantNOT SPECIFIED-5 ns43ns72 ns156 ns100A20V---
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ACTIVE (Last Updated: 1 day ago)6 WeeksSurface Mount3-XFDFN-3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3EAR99--MOSFET (Metal Oxide)BOTTOMNO LEADCSD173821500mW TaSingleENHANCEMENT MODEDRAINN-ChannelSWITCHING64m Ω @ 500mA, 8V1.2V @ 250μA347pF @ 15V2.3A Ta2.7nC @ 4.5V30V1.8V 8V-------1.035mm635μm-ROHS3 CompliantLead Free-Surface Mount---500mW59 ns--279 ns2.3A10V1150°C350μm
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