CSD17581Q3A

Texas Instruments CSD17581Q3A

Part Number:
CSD17581Q3A
Manufacturer:
Texas Instruments
Ventron No:
2485382-CSD17581Q3A
Description:
30-V, N channel NexFET? power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm
ECAD Model:
Datasheet:
csd17581q3a

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Specifications
Texas Instruments CSD17581Q3A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17581Q3A.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Surface Mount
    YES
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Base Part Number
    CSD17581
  • Number of Elements
    1
  • Power Dissipation-Max
    2.8W Ta 63W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.8m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    1.7V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3640pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    21A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    54nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    21A
  • Drain-source On Resistance-Max
    0.0047Ohm
  • Pulsed Drain Current-Max (IDM)
    154A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    76 mJ
  • Feedback Cap-Max (Crss)
    195 pF
  • Length
    3.3mm
  • Width
    3.3mm
  • Thickness
    800μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD17581Q3A Description
CSD17581Q3A is an N-channel Power MOSFET transistor from the manufacturer Texas Instrument with a voltage of 20V. The operating temperature of CSD17581Q3A is -55°C~150°C TJ and its maximum power dissipation is 63W Tc. This 30-V, 3.2-mΩ, SON 3.3-mm × 3.3-mm NexFET? power MOSFET is designed to minimize losses in power conversion applications.

CSD17581Q3A Features
Low Qg and Qgd
Low RDS(on)
Low Thermal Resistance
Avalanche Rated
Lead-Free
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package

CSD17581Q3A Applications
Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Motor Control Applications
Optimized for Control FET Applications
CSD17581Q3A More Descriptions
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.7 mOhm 8-VSONP -55 to 150
30V N CH MOSFET / 30-V N-Channel NexFET Power MOSFETs
Power Field-Effect Transistor, 21A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to CSD17581Q3A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Feedback Cap-Max (Crss)
    Length
    Width
    Thickness
    RoHS Status
    Lead Free
    Contact Plating
    Mount
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Number of Channels
    Max Junction Temperature (Tj)
    Height
    View Compare
  • CSD17581Q3A
    CSD17581Q3A
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    8-PowerVDFN
    YES
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    CSD17581
    1
    2.8W Ta 63W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    3.8m Ω @ 16A, 10V
    1.7V @ 250μA
    3640pF @ 15V
    21A Ta
    54nC @ 10V
    30V
    4.5V 10V
    ±20V
    21A
    0.0047Ohm
    154A
    30V
    76 mJ
    195 pF
    3.3mm
    3.3mm
    800μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Surface Mount
    8-PowerTDFN
    -
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    CSD17576
    1
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    30V
    4.5V 10V
    ±20V
    30A
    0.0029Ohm
    400A
    30V
    -
    -
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Contains Lead
    Gold
    Surface Mount
    260
    not_compliant
    NOT SPECIFIED
    3.1W
    5 ns
    16ns
    3 ns
    23 ns
    100A
    20V
    -
    -
    -
  • CSD16570Q5B
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Surface Mount
    8-PowerTDFN
    -
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    CSD16570
    1
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    -
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    25V
    4.5V 10V
    ±20V
    59A
    -
    400A
    25V
    -
    1290 pF
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Contains Lead
    Gold
    Surface Mount
    260
    not_compliant
    NOT SPECIFIED
    -
    5 ns
    43ns
    72 ns
    156 ns
    100A
    20V
    -
    -
    -
  • CSD17382F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    3-XFDFN
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    30V
    1.8V 8V
    -
    -
    -
    -
    -
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    Lead Free
    -
    Surface Mount
    -
    -
    -
    500mW
    59 ns
    -
    -
    279 ns
    2.3A
    10V
    1
    150°C
    350μm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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