STMicroelectronics STGB12NB60KDT4

Name: STGB12NB60KDT4
Brand: STMicroelectronics
SKU: 2494940-STGB12NB60KDT4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGB12NB60KDT4

Manufacturer:: STMicroelectronics

Ventron No:: 2494940-STGB12NB60KDT4

Description:: IGBT 600V 30A 125W D2PAK

ECAD Model:

Datasheet:: STGx12NB60KD

Specifications

STMicroelectronics STGB12NB60KDT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB12NB60KDT4.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
125W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Reach Compliance Code
not_compliant
Current Rating
18A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STGB12
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
125W
Input Type
Standard
Transistor Application
MOTOR CONTROL
Rise Time
14.5ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
30A
Reverse Recovery Time
80 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.2V
Max Breakdown Voltage
600V
Turn On Time
39.5 ns
Test Condition
480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 12A
Turn Off Time-Nom (toff)
461 ns
Gate Charge
54nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
25ns/96ns
Switching Energy
258μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

STGB12NB60KDT4 Description
STGB12NB60KDT4 is a 600V N-channel Short circuit proof PowerMESH? IGBT. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH? IGBTs, with outstanding performances. The “K” identifies a family optimized for high-frequency motor control applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.

STGB12NB60KDT4 Features
High input impedance Low on losses Low on gate charge High-frequency operation A typical short circuit withstands a time of 10 micros Co-packaged antiparallel diode

STGB12NB60KDT4 Applications
High-frequency motor controls SMPS UPS Datacom module Enterprise systems

STGB12NB60KDT4 More Descriptions

Trans IGBT Chip N-CH 600V 30A 3-Pin(2 Tab) D2PAK T/R
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 18 Amp
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel

Product Comparison

The three parts on the right have similar specifications to STGB12NB60KDT4.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Input Type

Transistor Application

Rise Time

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Height

Length

Width

Radiation Hardening

Pbfree Code

Additional Feature

Case Connection

Weight

Power - Max

IGBT Type

View Compare
STGB12NB60KDT4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

150°C TJ

Tape & Reel (TR)

PowerMESH™

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

Insulated Gate BIP Transistors

600V

125W

GULL WING

245

not_compliant

18A

30

STGB12

3

R-PSSO-G2

Not Qualified

1

Single

125W

Standard

MOTOR CONTROL

14.5ns

N-CHANNEL

600V

30A

80 ns

600V

2.2V

600V

39.5 ns

480V, 12A, 10 Ω, 15V

2.8V @ 15V, 12A

461 ns

54nC

60A

25ns/96ns

258μJ (off)

20V

7V

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-
STGB14NC60KDT4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

-

Active

1 (Unlimited)

-

-

-

-

600V

80W

-

-

-

25A

-

STGB14

-

-

-

-

Single

80W

Standard

-

8.5ns

-

600V

25A

37 ns

600V

2.1V

600V

-

390V, 7A, 10 Ω, 15V

2.5V @ 15V, 7A

-

34.4nC

50A

22.5ns/116ns

82μJ (on), 155μJ (off)

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

8 Weeks

4.6mm

10.4mm

9.35mm

No

-

-

-

-

-

-

STGB12NB60KDT4 vs STGB14NC60KDT4
STGB10NB37LZT4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

PowerMESH™

e3

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

Insulated Gate BIP Transistors

-

125W

GULL WING

245

-

20A

30

STGB10

3

R-PSSO-G2

-

1

Single

125W

Standard

AUTOMOTIVE IGNITION

340ns

N-CHANNEL

440V

20A

-

440V

-

440V

860 ns

328V, 10A, 1k Ω, 5V

1.8V @ 4.5V, 10A

17800 ns

28nC

40A

1.3μs/8μs

2.4mJ (on), 5mJ (off)

-

2.4V

ROHS3 Compliant

Lead Free

-

8 Weeks

4.6mm

10.4mm

9.35mm

No

yes

VOLTAGE CLAMPING

COLLECTOR

-

-

-

STGB12NB60KDT4 vs STGB10NB37LZT4
STGB10H60DF

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Cut Tape (CT)

-

-

Active

1 (Unlimited)

-

EAR99

-

-

-

115W

-

NOT SPECIFIED

-

-

NOT SPECIFIED

STGB10

-

-

-

-

Single

-

Standard

-

-

-

600V

20A

107 ns

600V

1.5V

600V

-

400V, 10A, 10 Ω, 15V

1.95V @ 15V, 10A

-

57nC

40A

19.5ns/103ns

83μJ (on), 140μJ (off)

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 7 months ago)

20 Weeks

4.6mm

10.4mm

9.35mm

-

-

-

-

2.000002g

115W

Trench Field Stop

STGB12NB60KDT4 vs STGB10H60DF