Fairchild/ON Semiconductor SI9435DY
- Part Number:
- SI9435DY
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2851610-SI9435DY
- Description:
- MOSFET P-CH 30V 5.3A 8-SOIC
- ECAD Model:
-
- Datasheet:
- SI9435DY
Fairchild/ON Semiconductor SI9435DY technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SI9435DY.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SOIC
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs50mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds690pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.3A Ta
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
SI9435DY Overview
The maximum input capacitance of this device is 690pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI9435DY Features
a 30V drain to source voltage (Vdss)
SI9435DY Applications
There are a lot of Rochester Electronics, LLC
SI9435DY applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 690pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI9435DY Features
a 30V drain to source voltage (Vdss)
SI9435DY Applications
There are a lot of Rochester Electronics, LLC
SI9435DY applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI9435DY More Descriptions
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CH MOSFET SO-8 30V 55MOHM @ 10V
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CH MOSFET SO-8 30V 55MOHM @ 10V
The three parts on the right have similar specifications to SI9435DY.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningLead FreeWeightNumber of ChannelsTransistor ApplicationThreshold VoltageMax Junction Temperature (Tj)REACH SVHCView Compare
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SI9435DYSurface Mount8-SOIC (0.154, 3.90mm Width)8-SOIC-55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaP-Channel50mOhm @ 5.3A, 10V3V @ 250μA690pF @ 15V5.3A Ta23nC @ 10V30V4.5V 10V±20VROHS3 Compliant---------------------------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)8-SOIC-55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaP-Channel24mOhm @ 8A, 4.5V1.5V @ 250μA2.26pF @ 10V8A Ta33nC @ 5V20V2.5V 4.5V±10VROHS3 Compliant---------------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)TrenchFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)1.25W TaP-Channel25m Ω @ 7.1A, 4.5V850mV @ 250μA-5.6A Ta40nC @ 4.5V-2.5V 4.5V±9VROHS3 CompliantSurface Mount8SILICON2009e3yes8EAR9925MOhmMatte Tin (Sn)Other TransistorsDUALGULL WING2604081SingleENHANCEMENT MODE2W30 ns40ns40 ns130 ns-7.1A9V5.6A20V1.55mm5mm4mmNoLead Free------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)TrenchFET®Active1 (Unlimited)MOSFET (Metal Oxide)2.4W Ta 5W TcP-Channel120m Ω @ 3.2A, 10V3V @ 250μA600pF @ 30V4.7A Tc22nC @ 10V60V4.5V 10V±20VROHS3 CompliantSurface Mount8SILICON2011e3yes8EAR99120mOhmMatte Tin (Sn)Other TransistorsDUALGULL WING2603081SingleENHANCEMENT MODE2.4W10 ns70ns30 ns35 ns-4.7A20V--60V1.75mm5mm4mmNoLead Free506.605978mg1SWITCHING-3V150°CNo SVHC
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