Vishay Siliconix SI9407BDY-T1-GE3
- Part Number:
- SI9407BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2481735-SI9407BDY-T1-GE3
- Description:
- MOSFET P-CH 60V 4.7A 8-SOIC
- Datasheet:
- SI9407BDY-T1-GE3
Vishay Siliconix SI9407BDY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI9407BDY-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance120mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.4W Ta 5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.4W
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs120m Ω @ 3.2A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds600pF @ 30V
- Current - Continuous Drain (Id) @ 25°C4.7A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time70ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)-4.7A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- Max Junction Temperature (Tj)150°C
- Height1.75mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI9407BDY-T1-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 600pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -4.7A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-3V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI9407BDY-T1-GE3 Features
a continuous drain current (ID) of -4.7A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 35 ns
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)
SI9407BDY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI9407BDY-T1-GE3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 600pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -4.7A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-3V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI9407BDY-T1-GE3 Features
a continuous drain current (ID) of -4.7A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 35 ns
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)
SI9407BDY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI9407BDY-T1-GE3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SI9407BDY-T1-GE3 More Descriptions
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No |Vishay SI9407BDY-T1-GE3.
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to 150°C
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No |Vishay SI9407BDY-T1-GE3.
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to 150°C
The three parts on the right have similar specifications to SI9407BDY-T1-GE3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain Current-Max (Abs) (ID)Factory Lead TimeView Compare
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SI9407BDY-T1-GE3Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesActive1 (Unlimited)8EAR99120mOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260308112.4W Ta 5W TcSingleENHANCEMENT MODE2.4W10 nsP-ChannelSWITCHING120m Ω @ 3.2A, 10V3V @ 250μA600pF @ 30V4.7A Tc22nC @ 10V70ns60V4.5V 10V±20V30 ns35 ns-4.7A-3V20V-60V150°C1.75mm5mm4mmNo SVHCNoROHS3 CompliantLead Free----
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)PowerTrench®---Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-------2.5W Ta----P-Channel-50mOhm @ 5.3A, 10V3V @ 250μA690pF @ 15V5.3A Ta23nC @ 10V-30V4.5V 10V±20V------------ROHS3 Compliant-8-SOIC--
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesObsolete1 (Unlimited)8EAR9925MOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2604081-1.25W TaSingleENHANCEMENT MODE2W30 nsP-Channel-25m Ω @ 7.1A, 4.5V850mV @ 250μA-5.6A Ta40nC @ 4.5V40ns-2.5V 4.5V±9V40 ns130 ns-7.1A-9V20V-1.55mm5mm4mm-NoROHS3 CompliantLead Free-5.6A-
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)8EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260308115W TcSingleENHANCEMENT MODE2.4W30 nsP-ChannelSWITCHING120m Ω @ 3.2A, 10V3V @ 250μA600pF @ 30V4.7A Tc22nC @ 10V70ns60V4.5V 10V±20V30 ns40 ns3.2A-20V-60V-1.55mm5mm4mm-NoROHS3 Compliant--4.7A14 Weeks
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