SI9407BDY-T1-GE3

Vishay Siliconix SI9407BDY-T1-GE3

Part Number:
SI9407BDY-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2481735-SI9407BDY-T1-GE3
Description:
MOSFET P-CH 60V 4.7A 8-SOIC
ECAD Model:
Datasheet:
SI9407BDY-T1-GE3

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Specifications
Vishay Siliconix SI9407BDY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI9407BDY-T1-GE3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    120mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.4W Ta 5W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.4W
  • Turn On Delay Time
    10 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    120m Ω @ 3.2A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    600pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    4.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    70ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    -4.7A
  • Threshold Voltage
    -3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.75mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI9407BDY-T1-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 600pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -4.7A.With a drain-source breakdown voltage of -60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-3V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI9407BDY-T1-GE3 Features
a continuous drain current (ID) of -4.7A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 35 ns
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)


SI9407BDY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI9407BDY-T1-GE3 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SI9407BDY-T1-GE3 More Descriptions
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No |Vishay SI9407BDY-T1-GE3.
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to SI9407BDY-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain Current-Max (Abs) (ID)
    Factory Lead Time
    View Compare
  • SI9407BDY-T1-GE3
    SI9407BDY-T1-GE3
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    120mOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    1
    2.4W Ta 5W Tc
    Single
    ENHANCEMENT MODE
    2.4W
    10 ns
    P-Channel
    SWITCHING
    120m Ω @ 3.2A, 10V
    3V @ 250μA
    600pF @ 30V
    4.7A Tc
    22nC @ 10V
    70ns
    60V
    4.5V 10V
    ±20V
    30 ns
    35 ns
    -4.7A
    -3V
    20V
    -60V
    150°C
    1.75mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • SI9435DY
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta
    -
    -
    -
    -
    P-Channel
    -
    50mOhm @ 5.3A, 10V
    3V @ 250μA
    690pF @ 15V
    5.3A Ta
    23nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8-SOIC
    -
    -
  • SI9424BDY-T1-E3
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    25MOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    -
    1.25W Ta
    Single
    ENHANCEMENT MODE
    2W
    30 ns
    P-Channel
    -
    25m Ω @ 7.1A, 4.5V
    850mV @ 250μA
    -
    5.6A Ta
    40nC @ 4.5V
    40ns
    -
    2.5V 4.5V
    ±9V
    40 ns
    130 ns
    -7.1A
    -
    9V
    20V
    -
    1.55mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    5.6A
    -
  • SI9407BDY-T1-E3
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    1
    5W Tc
    Single
    ENHANCEMENT MODE
    2.4W
    30 ns
    P-Channel
    SWITCHING
    120m Ω @ 3.2A, 10V
    3V @ 250μA
    600pF @ 30V
    4.7A Tc
    22nC @ 10V
    70ns
    60V
    4.5V 10V
    ±20V
    30 ns
    40 ns
    3.2A
    -
    20V
    -60V
    -
    1.55mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    -
    -
    4.7A
    14 Weeks
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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