Vishay Siliconix SI9435BDY-T1-E3
- Part Number:
- SI9435BDY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848534-SI9435BDY-T1-E3
- Description:
- MOSFET P-CH 30V 4.1A 8-SOIC
- Datasheet:
- SI9435BDY-T1-E3
Vishay Siliconix SI9435BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI9435BDY-T1-E3.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight186.993455mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance42mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs42m Ω @ 5.7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Current - Continuous Drain (Id) @ 25°C4.1A Ta
- Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)-5.7A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min30V
- Nominal Vgs-1 V
- Height1.55mm
- Length5mm
- Width4mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI9435BDY-T1-E3 Overview
This device's continuous drain current (ID) is -5.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -1V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI9435BDY-T1-E3 Features
a continuous drain current (ID) of -5.7A
the turn-off delay time is 42 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SI9435BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI9435BDY-T1-E3 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
This device's continuous drain current (ID) is -5.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -1V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI9435BDY-T1-E3 Features
a continuous drain current (ID) of -5.7A
the turn-off delay time is 42 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SI9435BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI9435BDY-T1-E3 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
SI9435BDY-T1-E3 More Descriptions
Transistor MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R
Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W
Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W
The three parts on the right have similar specifications to SI9435BDY-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)DS Breakdown Voltage-MinNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageLead FreePulsed Drain Current-Max (IDM)Transistor ApplicationInput Capacitance (Ciss) (Max) @ VdsView Compare
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SI9435BDY-T1-E312 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesActive1 (Unlimited)8EAR9942mOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260408111.3W TaSingleENHANCEMENT MODE1.3W14 nsP-Channel42m Ω @ 5.7A, 10V3V @ 250μA4.1A Ta24nC @ 10V14ns30V4.5V 10V±20V14 ns42 ns-5.7A-1V20V30V-1 V1.55mm5mm4mmUnknownNoROHS3 Compliant-------
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)8EAR9924mOhmMatte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260308111.5W TaSingleENHANCEMENT MODE1.5W10 nsN-Channel24m Ω @ 8.1A, 10V3V @ 250μA6.2A Ta23nC @ 10V15ns-4.5V 10V±20V15 ns30 ns8.1A-20V-1 V1.55mm5mm4mmUnknownNoROHS3 Compliant6.2A30VLead Free---
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)-2013e3yesObsolete1 (Unlimited)8EAR9940mOhmMatte Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WING2604081-1.3W TaSingleENHANCEMENT MODE1.3W15 nsP-Channel40m Ω @ 6.3A, 4.5V1.5V @ 250μA4.5A Ta18nC @ 4.5V45ns20V2.5V 4.5V±8V45 ns80 ns-6.3A-8V20V-----NoROHS3 Compliant4.5A-Lead Free20A--
-
14 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)8EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260308115W TcSingleENHANCEMENT MODE2.4W30 nsP-Channel120m Ω @ 3.2A, 10V3V @ 250μA4.7A Tc22nC @ 10V70ns60V4.5V 10V±20V30 ns40 ns3.2A-20V--1.55mm5mm4mm-NoROHS3 Compliant4.7A-60V--SWITCHING600pF @ 30V
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