SI9435BDY-T1-E3

Vishay Siliconix SI9435BDY-T1-E3

Part Number:
SI9435BDY-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2848534-SI9435BDY-T1-E3
Description:
MOSFET P-CH 30V 4.1A 8-SOIC
ECAD Model:
Datasheet:
SI9435BDY-T1-E3

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Specifications
Vishay Siliconix SI9435BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI9435BDY-T1-E3.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    186.993455mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    42mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    14 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    42m Ω @ 5.7A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    4.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    42 ns
  • Continuous Drain Current (ID)
    -5.7A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    30V
  • Nominal Vgs
    -1 V
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SI9435BDY-T1-E3 Overview
This device's continuous drain current (ID) is -5.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -1V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI9435BDY-T1-E3 Features
a continuous drain current (ID) of -5.7A
the turn-off delay time is 42 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)


SI9435BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI9435BDY-T1-E3 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
SI9435BDY-T1-E3 More Descriptions
Transistor MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R
Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W
Product Comparison
The three parts on the right have similar specifications to SI9435BDY-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Lead Free
    Pulsed Drain Current-Max (IDM)
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    View Compare
  • SI9435BDY-T1-E3
    SI9435BDY-T1-E3
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    186.993455mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    42mOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    14 ns
    P-Channel
    42m Ω @ 5.7A, 10V
    3V @ 250μA
    4.1A Ta
    24nC @ 10V
    14ns
    30V
    4.5V 10V
    ±20V
    14 ns
    42 ns
    -5.7A
    -1V
    20V
    30V
    -1 V
    1.55mm
    5mm
    4mm
    Unknown
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • SI9410BDY-T1-E3
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    24mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    1
    1.5W Ta
    Single
    ENHANCEMENT MODE
    1.5W
    10 ns
    N-Channel
    24m Ω @ 8.1A, 10V
    3V @ 250μA
    6.2A Ta
    23nC @ 10V
    15ns
    -
    4.5V 10V
    ±20V
    15 ns
    30 ns
    8.1A
    -
    20V
    -
    1 V
    1.55mm
    5mm
    4mm
    Unknown
    No
    ROHS3 Compliant
    6.2A
    30V
    Lead Free
    -
    -
    -
  • SI9434BDY-T1-E3
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    40mOhm
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    -
    1.3W Ta
    Single
    ENHANCEMENT MODE
    1.3W
    15 ns
    P-Channel
    40m Ω @ 6.3A, 4.5V
    1.5V @ 250μA
    4.5A Ta
    18nC @ 4.5V
    45ns
    20V
    2.5V 4.5V
    ±8V
    45 ns
    80 ns
    -6.3A
    -
    8V
    20V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    4.5A
    -
    Lead Free
    20A
    -
    -
  • SI9407BDY-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    8
    1
    1
    5W Tc
    Single
    ENHANCEMENT MODE
    2.4W
    30 ns
    P-Channel
    120m Ω @ 3.2A, 10V
    3V @ 250μA
    4.7A Tc
    22nC @ 10V
    70ns
    60V
    4.5V 10V
    ±20V
    30 ns
    40 ns
    3.2A
    -
    20V
    -
    -
    1.55mm
    5mm
    4mm
    -
    No
    ROHS3 Compliant
    4.7A
    -60V
    -
    -
    SWITCHING
    600pF @ 30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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