Fairchild/ON Semiconductor SI9424DY
- Part Number:
- SI9424DY
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3071084-SI9424DY
- Description:
- MOSFET P-CH 20V 8A 8-SOIC
- Datasheet:
- SI9424DY
Fairchild/ON Semiconductor SI9424DY technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SI9424DY.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SOIC
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs24mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.26pF @ 10V
- Current - Continuous Drain (Id) @ 25°C8A Ta
- Gate Charge (Qg) (Max) @ Vgs33nC @ 5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±10V
- RoHS StatusROHS3 Compliant
SI9424DY Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.26pF @ 10V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
SI9424DY Features
a 20V drain to source voltage (Vdss)
SI9424DY Applications
There are a lot of Rochester Electronics, LLC
SI9424DY applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.26pF @ 10V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
SI9424DY Features
a 20V drain to source voltage (Vdss)
SI9424DY Applications
There are a lot of Rochester Electronics, LLC
SI9424DY applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
SI9424DY More Descriptions
MOSFET P-CH 20V 8A 8-SOIC
MOSFETs Single P-Ch 20V/10V
French Electronic Distributor since 1988
RES 1K OHM 1% 1/10W 0603
MOSFETs Single P-Ch 20V/10V
French Electronic Distributor since 1988
RES 1K OHM 1% 1/10W 0603
The three parts on the right have similar specifications to SI9424DY.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRadiation HardeningLead FreeSubcategoryDrain to Source Breakdown VoltageHeightLengthWidthFactory Lead TimeWeightNumber of ChannelsTransistor ApplicationView Compare
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SI9424DYSurface Mount8-SOIC (0.154, 3.90mm Width)8-SOIC-55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaP-Channel24mOhm @ 8A, 4.5V1.5V @ 250μA2.26pF @ 10V8A Ta33nC @ 5V20V2.5V 4.5V±10VROHS3 Compliant----------------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)MOSFET (Metal Oxide)1.3W TaP-Channel40m Ω @ 6.3A, 4.5V1.5V @ 250μA-4.5A Ta18nC @ 4.5V20V2.5V 4.5V±8VROHS3 CompliantSurface Mount8SILICON2013e3yes8EAR9940mOhmMatte Tin (Sn)DUALGULL WING2604081SingleENHANCEMENT MODE1.3W15 ns45ns45 ns80 ns-6.3A8V4.5A20A20VNoLead Free---------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)TrenchFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)1.25W TaP-Channel25m Ω @ 7.1A, 4.5V850mV @ 250μA-5.6A Ta40nC @ 4.5V-2.5V 4.5V±9VROHS3 CompliantSurface Mount8SILICON2009e3yes8EAR9925MOhmMatte Tin (Sn)DUALGULL WING2604081SingleENHANCEMENT MODE2W30 ns40ns40 ns130 ns-7.1A9V5.6A--NoLead FreeOther Transistors20V1.55mm5mm4mm----
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Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)TrenchFET®Active1 (Unlimited)MOSFET (Metal Oxide)5W TcP-Channel120m Ω @ 3.2A, 10V3V @ 250μA600pF @ 30V4.7A Tc22nC @ 10V60V4.5V 10V±20VROHS3 CompliantSurface Mount8SILICON2013e3yes8EAR99-Matte Tin (Sn)DUALGULL WING2603081SingleENHANCEMENT MODE2.4W30 ns70ns30 ns40 ns3.2A20V4.7A--No-Other Transistors-60V1.55mm5mm4mm14 Weeks506.605978mg1SWITCHING
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