Vishay Siliconix SI9410BDY-T1-E3

SI9410BDY-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.1A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [6.2A] according to its drain current.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI9410BDY-T1-E3 Features
a continuous drain current (ID) of 8.1A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns


SI9410BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI9410BDY-T1-E3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies