Vishay Siliconix SI7850DP-T1-E3

Name: SI7850DP-T1-E3
Brand: Vishay Siliconix
SKU: 2478173-SI7850DP-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7850DP-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478173-SI7850DP-T1-E3

Description:: MOSFET N-CH 60V 6.2A PPAK SO-8

ECAD Model:

Datasheet:: SI7850DP-T1-E3

Specifications

Vishay Siliconix SI7850DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7850DP-T1-E3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Number of Pins
8
Transistor Element Material
SILICON
Manufacturer Package Identifier
S17-0173-Single
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
22mOhm
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Pin Count
8
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.8W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.8W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 10.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Current - Continuous Drain (Id) @ 25°C
6.2A Ta
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
6.2A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
40A
Dual Supply Voltage
60V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
3 V
Turn Off Time-Max (toff)
74ns
Turn On Time-Max (ton)
40ns
Height
1.17mm
Length
4.9mm
Width
5.89mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI7850DP-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has 6.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Peak drain current is 40A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SI7850DP-T1-E3 Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V

SI7850DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7850DP-T1-E3 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

SI7850DP-T1-E3 More Descriptions

Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)
SI7850DP-T1-E3 ; ROHS ; V ISHAY/SILICONIX ; MOSFET N-CH 60V POWERPAK 8-SOIC
Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.018Ohm, ID 6.2A, PowerPAK SO-8,PD 1.8W,-55C | Siliconix / Vishay SI7850DP-T1-E3
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.8W; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Package / Case:SOIC PowerPAK; Power Dissipation Pd:1.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.2A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:27nC; No. of Pins:8; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:3000; Resistance, Rds on Max:0.022ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.3°C/W; Voltage, Vds Max:60V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1V; Width, External:6.2mm; Width, Tape:12mm

Product Comparison

The three parts on the right have similar specifications to SI7850DP-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Technology

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Weight

Terminal Finish

Additional Feature

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Input Capacitance (Ciss) (Max) @ Vds

Drain-source On Resistance-Max

View Compare
SI7850DP-T1-E3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® SO-8

8

SILICON

S17-0173-Single

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2008

e3

yes

Active

1 (Unlimited)

5

SMD/SMT

EAR99

22mOhm

MOSFET (Metal Oxide)

DUAL

FLAT

8

R-PDSO-F5

1

1

1.8W Ta

Single

ENHANCEMENT MODE

1.8W

DRAIN

10 ns

N-Channel

SWITCHING

22m Ω @ 10.3A, 10V

3V @ 250μA

6.2A Ta

27nC @ 10V

10ns

4.5V 10V

±20V

10 ns

25 ns

6.2A

3V

20V

60V

40A

60V

150°C

3 V

74ns

40ns

1.17mm

4.9mm

5.89mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
SI7840BDP-T1-E3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

PowerPAK® SO-8

-

SILICON

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2009

e3

yes

Obsolete

1 (Unlimited)

5

-

EAR99

8.5mOhm

MOSFET (Metal Oxide)

DUAL

C BEND

8

R-XDSO-C5

1

1

1.8W Ta

Single

ENHANCEMENT MODE

-

DRAIN

17 ns

N-Channel

SWITCHING

8.5m Ω @ 16.5A, 10V

3V @ 250μA

11A Ta

21nC @ 4.5V

14ns

4.5V 10V

±20V

14 ns

39 ns

11A

-

20V

-

50A

-

-

-

-

-

1.04mm

4.9mm

5.89mm

-

No

ROHS3 Compliant

Lead Free

506.605978mg

MATTE TIN

FAST SWITCHING

FET General Purpose Power

260

30

30V

30V

20 mJ

-

-

SI7850DP-T1-E3 vs SI7840BDP-T1-E3
SI7862ADP-T1-GE3

Vishay Siliconix

14 Weeks

-

Surface Mount

Surface Mount

PowerPAK® SO-8

-

SILICON

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

yes

Active

1 (Unlimited)

5

-

EAR99

-

MOSFET (Metal Oxide)

DUAL

C BEND

8

R-XDSO-C5

1

1

1.9W Ta

Single

ENHANCEMENT MODE

-

DRAIN

42 ns

N-Channel

SWITCHING

3m Ω @ 29A, 4.5V

2V @ 250μA

18A Ta

80nC @ 4.5V

38ns

2.5V 4.5V

±8V

50 ns

120 ns

18A

-

8V

16V

60A

-

-

-

-

-

-

-

-

-

No

ROHS3 Compliant

-

506.605978mg

Matte Tin (Sn)

-

FET General Purpose Powers

260

40

-

-

-

7340pF @ 8V

0.003Ohm

SI7850DP-T1-E3 vs SI7862ADP-T1-GE3
SI7848BDP-T1-GE3

Vishay Siliconix

14 Weeks

-

Surface Mount

Surface Mount

PowerPAK® SO-8

8

SILICON

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2017

e3

yes

Active

1 (Unlimited)

5

-

EAR99

9mOhm

MOSFET (Metal Oxide)

DUAL

C BEND

8

R-XDSO-C5

1

1

4.2W Ta 36W Tc

Single

ENHANCEMENT MODE

4.2W

DRAIN

10 ns

N-Channel

SWITCHING

9m Ω @ 16A, 10V

3V @ 250μA

47A Tc

50nC @ 10V

15ns

4.5V 10V

±20V

10 ns

30 ns

47A

3V

20V

-

50A

-

-

-

-

-

1.04mm

4.9mm

5.89mm

No SVHC

No

ROHS3 Compliant

Lead Free

506.605978mg

Matte Tin (Sn)

-

FET General Purpose Powers

260

30

40V

40V

-

2000pF @ 20V

-

SI7850DP-T1-E3 vs SI7848BDP-T1-GE3

Certification

Related parts for SI7850DP-T1-E3

SI7812DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 75V 16A 1212-8 PPAK
SI7840BDP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8
SI7880ADP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8
SI7862ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 16V 18A PPAK SO-8
SI7882DP-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 13A PPAK SO-8
SI7840BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8
SI7892BDP-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 15A PPAK SO-8
SI7848BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 47A PPAK SO-8
SI7804DN-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 6.5A 1212-8

Popular Search Part Number Related Keywords Search Tags

SI7850DP-T1-E3 Price
SI7850DP-T1-E3 Picture
SI7850DP-T1-E3 Buy
SI7850DP-T1-E3 Distributor
SI7850DP-T1-E3 Image
SI7850DP-T1-E3 Inquiry
SI7850DP-T1-E3 Manufacturer
SI7850DP-T1-E3 Part
SI7850DP-T1-E3 Description
SI7850DP-T1-E3 Technical Data
SI7850DP-T1-E3 Stock
SI7850DP-T1-E3 Wholesales
SI7850DP-T1-E3 PDF
SI7850DP-T1-E3 Inventory
SI7850DP-T1-E3 Supplier
SI7850DP-T1-E3 Datasheet
SI7850DP-T1-E3 Rfq
SI7850DP-T1-E3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI7850DP-T1-E3 DISTI #	Vishay Siliconix	MOSFET N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant	33056	1 $1.87 10 $1.688 100 $1.3567 500 $1.05522 1000 $0.87433
SI7850DP-T1-E3 DISTI #	Vishay Siliconix	MOSFET N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant	33056	1 $1.87 10 $1.688 100 $1.3567 500 $1.05522 1000 $0.87433
SI7850DP-T1-E3 DISTI #	Vishay Siliconix	MOSFET N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant	33000	3000 $0.79032
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP T/ RoHS: Compliant	741	9 $1.8998 16 $1.53 32 $1.2661 64 $1.0366
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - RoHS: Not Compliant	21000	3000 $0.7739 6000 $0.7719 12000 $0.7699 18000 $0.7679 30000 $0.7659
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - RoHS: Compliant	2998	1 $1.2249 30 $1.1019 75 $1.0579 150 $1.0379 375 $1.0359 750 $0.9059 1500 $0.8479
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R ( RoHS: Compliant	15000	3000 $0.963 6000 $0.74077 9000 $0.58959 15000 $0.4981 30000 $0.45857 75000 $0.44446 150000 $0.43119
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R ( RoHS: Compliant	46000	3000 $1.1649 6000 $0.8359 12000 $0.6779 18000 $0.5989 30000 $0.5729
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - RoHS: Not Compliant	0	1 $2.03 25 $1.85 50 $1.68 100 $1.5 250 $1.35 500 $1.2 1000 $1.18
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - RoHS: Not Compliant	0	1 $2.34 25 $2.12 50 $1.92 100 $1.7 250 $1.52 500 $1.33 1000 $1.31
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 10.3A, SOIC-8, Transistor	3000	1 $2.34 25 $2.12 50 $1.92 100 $1.7 250 $1.52 500 $1.33 1000 $1.31
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET Transistor, N Channel, 10.3 A, 60 V, 22 moh	25279	1 $2.03 25 $1.85 50 $1.68 100 $1.5 250 $1.35 500 $1.2 1000 $1.18
SI7850DP-T1-E3. DISTI #	Vishay Intertechnologies	N-CH 60-V (D-S) FAST SWITCHING MOSFET , ROHS COMPL	27000	1 $1.07 3000 $1.07
SI7850DP-T1-E3 DISTI #	Vishay Siliconix	MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.018Oh RoHS: Compliant	5709	1 $0.93
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	40175	1 $1.95 10 $1.77 100 $1.42 500 $1.11 1000 $1.09 3000 $1.07
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Single N-Channel 60 V 22 mOhms Surface Mount Power RoHS: Compliant	153000	3000 $0.47
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET N-CH 60V 6.2A POWERPAK SO8, PK	15	5 $1.544 30 $1.196 150 $0.926 750 $0.858 1500 $0.782
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET N-CH 60V 6.2A POWERPAK SO8, RL	5	30 $1.196 150 $0.926 750 $0.858 1500 $0.782
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP T/ RoHS: Compliant	2676	10 $1.2669 25 $1.1402 100 $1.0826
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP T/ RoHS: Compliant	741	1 $2.48 8 $1.49 16 $1.2 32 $0.993 64 $0.813 128 $0.709
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK SO-8	189000
SI7850DP-T1-E3. DISTI #	Vishay Intertechnologies	MOSFET 60V 10.3A 4.5W	1920	10 $1.485
SI7850DP-T1-E3 DISTI #	Vishay Siliconix	Power Field-Effect Transistor, 6.2AI(D),60V,0.022o RoHS: Compliant	3000	3000 $0.52
SI7850DP-T1-E3 DISTI #	Vishay Siliconix	PowerField-EffectTransistor,6.2AI(D),60V,0.022ohm, RoHS: Compliant	157482	3000 $1.51 157482 $1.37
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	27876	1 $3.09 10 $2.81 100 $2.25 500 $1.76 1000 $1.73 3000 $1.7
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N SO-8 REEL 3K RoHS: Compliant	0	1 $4772.21
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	0	1 $3.09 10 $2.81 100 $2.25 500 $1.76 1000 $1.73 3000 $1.7
SI7850DP-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	31544	5 $1.42 25 $1.22 100 $0.945 250 $0.88 500 $0.815

SI7850D~~(4)~~
SI7850~~(4)~~
SI785~~(29)~~
SI78~~(152)~~
SI7~~(163)~~

Vishay Siliconix SI7850DP-T1-E3

Quick Request Quote

W25Q128JVSIQ Footprint, Features and Package

TDA7560 Audio Power Amplifier: Symbol, Features and Application

BC640 PNP Transistor: Features, Package and Other Details

Introduction to the BTS7960B Motor Drive Module