Vishay Siliconix SI7806ADN-T1-E3

SI7806ADN-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 33 ns.Peak drain current is 40A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SI7806ADN-T1-E3 Features
a continuous drain current (ID) of 9A
the turn-off delay time is 33 ns
based on its rated peak drain current 40A.
a 30V drain to source voltage (Vdss)


SI7806ADN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7806ADN-T1-E3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies