Vishay Siliconix SI7164DP-T1-GE3

Name: SI7164DP-T1-GE3
Brand: Vishay Siliconix
SKU: 2478242-SI7164DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7164DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478242-SI7164DP-T1-GE3

Description:: MOSFET N-CH 60V 60A PPAK SO-8

ECAD Model:

Datasheet:: SI7164DP-T1-GE3

Specifications

Vishay Siliconix SI7164DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7164DP-T1-GE3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
6.25mOhm
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
8
JESD-30 Code
R-XDSO-C5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
6.25W Ta 104W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
6.25W
Case Connection
DRAIN
Turn On Delay Time
23 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.25m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2830pF @ 30V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
75nC @ 10V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
60A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
23.5A
Drain to Source Breakdown Voltage
60V
Nominal Vgs
2.5 V
Height
1.04mm
Length
4.9mm
Width
5.89mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI7164DP-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2830pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 23.5A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 23 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (10V).

SI7164DP-T1-GE3 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 40 ns
a threshold voltage of 2.5V

SI7164DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7164DP-T1-GE3 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

SI7164DP-T1-GE3 More Descriptions

Single N-Channel 60 V 0.00625 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
Power Field-Effect Transistor, 23.5A I(D), 60V, 0.00625ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 60V, 60A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to 150°C

Product Comparison

The three parts on the right have similar specifications to SI7164DP-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Configuration

Number of Channels

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Element Configuration

Drain to Source Voltage (Vdss)

Pulsed Drain Current-Max (IDM)

Terminal Finish

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

View Compare
SI7164DP-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

yes

Active

1 (Unlimited)

5

EAR99

6.25mOhm

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

8

R-XDSO-C5

1

SINGLE WITH BUILT-IN DIODE

1

6.25W Ta 104W Tc

ENHANCEMENT MODE

6.25W

DRAIN

23 ns

N-Channel

SWITCHING

6.25m Ω @ 10A, 10V

4.5V @ 250μA

2830pF @ 30V

60A Tc

75nC @ 10V

11ns

10V

±20V

11 ns

40 ns

60A

2.5V

20V

23.5A

60V

2.5 V

1.04mm

4.9mm

5.89mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
SI7178DP-T1-GE3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® SO-8

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2008

yes

Active

1 (Unlimited)

5

EAR99

14mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

-

1

6.25W Ta 104W Tc

ENHANCEMENT MODE

6.25W

DRAIN

21 ns

N-Channel

SWITCHING

14m Ω @ 10A, 10V

4.5V @ 250μA

2870pF @ 50V

60A Tc

72nC @ 10V

10ns

10V

±20V

11 ns

27 ns

60A

4.5V

20V

-

100V

4.5 V

1.04mm

4.9mm

5.89mm

Unknown

No

ROHS3 Compliant

Lead Free

e3

Single

-

-

-

-

-

-

-

SI7164DP-T1-GE3 vs SI7178DP-T1-GE3
SI7123DN-T1-GE3

Vishay Siliconix

12 Weeks

Tin

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

yes

Obsolete

1 (Unlimited)

5

EAR99

10.6mOhm

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

S-XDSO-C5

1

SINGLE WITH BUILT-IN DIODE

1

1.5W Ta

ENHANCEMENT MODE

1.5W

DRAIN

25 ns

P-Channel

SWITCHING

10.6m Ω @ 15A, 4.5V

1V @ 250μA

3729pF @ 10V

10.2A Ta

90nC @ 4.5V

88ns

1.8V 4.5V

±8V

88 ns

82 ns

-25A

-1V

8V

-

-20V

-

1.04mm

3.3mm

3.3mm

Unknown

No

ROHS3 Compliant

Lead Free

e3

-

20V

40A

-

-

-

-

-

SI7164DP-T1-GE3 vs SI7123DN-T1-GE3
SI7159DP-T1-GE3

Vishay Siliconix

21 Weeks

-

Surface Mount

Surface Mount

PowerPAK® SO-8

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

yes

Active

1 (Unlimited)

5

EAR99

-

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

SINGLE WITH BUILT-IN DIODE

-

5.4W Ta 83W Tc

ENHANCEMENT MODE

5W

DRAIN

-

P-Channel

SWITCHING

7m Ω @ 15A, 10V

2.5V @ 250μA

5170pF @ 15V

30A Tc

180nC @ 10V

14ns

4.5V 10V

±25V

11 ns

40 ns

29A

-

16V

20.7A

-25V

-

-

-

-

-

-

ROHS3 Compliant

-

e3

-

30V

60A

Matte Tin (Sn)

unknown

Not Qualified

0.007Ohm

20 mJ

SI7164DP-T1-GE3 vs SI7159DP-T1-GE3

Certification

Related parts for SI7164DP-T1-GE3

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MOSFET N-CH 75V 28A PPAK SO-8
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SI7160DP-T1-E3

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MOSFET N-CH 30V 20A PPAK SO-8

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SI7164DP-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI7164DP-T1-GE3 DISTI #V72:2272_09215627	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	342	1 $3.6047 10 $2.951 25 $2.656 100 $2.3769 250 $2.322
SI7164DP-T1-GE3 DISTI #V36:1790_09215627	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000 $1.931
SI7164DP-T1-GE3 DISTI #SI7164DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK SO-8 RoHS: Compliant	9619	1 $2.75 10 $2.474 100 $1.9887 500 $1.6339 1000 $1.35381
SI7164DP-T1-GE3 DISTI #SI7164DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK SO-8 RoHS: Compliant	9619	1 $2.75 10 $2.474 100 $1.9887 500 $1.6339 1000 $1.35381
SI7164DP-T1-GE3 DISTI #SI7164DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK SO-8 RoHS: Compliant	9000	3000 $1.22373 6000 $1.17841
SI7164DP-T1-GE3 DISTI #27023437	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	2880	36 $2.1385
SI7164DP-T1-GE3 DISTI #31226023	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	342	5 $3.6047
SI7164DP-T1-GE3 DISTI #SI7164DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	6000	3000 $1.32 6000 $1.26923 9000 $1.22222 15000 $1.17857 30000 $1.13793 75000 $1.11864 150000 $1.1
SI7164DP-T1-GE3 DISTI #SI7164DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000 $2.39 6000 $1.69 12000 $1.39 18000 $1.19 30000 $1.09
SI7164DP-T1-GE3 DISTI #SI7164DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	3000 $1.1159 6000 $1.0819 12000 $1.0379 18000 $1.0099 30000 $0.9819
SI7164DP-T1-GE3 DISTI #64R4908	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.5A 8-Pin PowerPAK SO T/R RoHS: Compliant	0	1 $2.91 25 $2.41 50 $2.2 100 $1.99 250 $1.93 500 $1.73 1000 $1.46
SI7164DP-T1-GE3 DISTI #64R4908	Vishay Intertechnologies	N CHANNEL MOSFET, Transistor Polarity:N Channel,	0	1 $1.97 25 $1.97 50 $1.82 100 $1.82 250 $1.82 500 $1.69
SI7164DP-T1-GE3 DISTI #33P5384	Vishay Intertechnologies	N CHANNEL MOSFET, FULL REEL, Transistor Polarity:	0	1 $1.86 2000 $1.77 4000 $1.66 8000 $1.54 12000 $1.48 20000 $1.46
SI7164DP-T1-GE3 DISTI #781-SI7164DP-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	4372	1 $3.3 10 $2.73 100 $2.25 250 $2.18 500 $1.95 1000 $1.65 3000 $1.56
SI7164DP-T1-GE3 DISTI #7879529P	Vishay Intertechnologies	MOSFET N-CH 60V 23.5A POWERPAK SO8, RL	2940	10 $1.59 50 $1.45 100 $1.37 200 $1.32
SI7164DP-T1-GE3 DISTI #7879529	Vishay Intertechnologies	MOSFET N-CH 60V 23.5A POWERPAK SO8, EA	29	1 $2 10 $1.59 50 $1.45 100 $1.37 200 $1.32
SI7164DPT1GE3 DISTI #	Vishay Siliconix		196
SI7164DP-T1-GE3 DISTI #	Vishay Siliconix	23.5 A, 60 V, 0.00625 ohm, N-CHANNEL, Si, POWER, M	5	1 $2.16 3 $1.8
SI7164DP-T1-GE3 DISTI #2101458	Vishay Intertechnologies	MOSFET, N CH, 60V, 60A, POWERPAK	2156	1 $2.55 10 $1.78 100 $1.47 250 $1.43 500 $1.24
SI7164DP-T1-GE3 DISTI #2101458	Vishay Intertechnologies	MOSFET, N CH, 60V, 60A, POWERPAK RoHS: Compliant	1812	1 $4.14 10 $3.73 100 $3 500 $2.47 1000 $2.05
SI7164DP-T1-GE3. DISTI #1837453	Vishay Intertechnologies	RoHS: Compliant	2880	1 $4.14 10 $3.73 100 $3 500 $2.47
SI7164DP-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	3000

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SI71~~(127)~~
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Vishay Siliconix SI7164DP-T1-GE3

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