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SI7145DP-T1-GE3

Vishay Siliconix SI7145DP-T1-GE3

Part Number:
SI7145DP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2478256-SI7145DP-T1-GE3
Description:
MOSFET P-CH 30V 60A PPAK SO-8
ECAD Model:
Datasheet:
SI7145DP-T1-GE3

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Specifications
Vishay Siliconix SI7145DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7145DP-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    S17-0173-Single
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    2.6mOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    6.25W Ta 104W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    6.25W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    27 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.6m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    15660pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    60A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    413nC @ 10V
  • Rise Time
    110ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    43 ns
  • Turn-Off Delay Time
    130 ns
  • Continuous Drain Current (ID)
    -60A
  • Threshold Voltage
    -2.3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    36.5A
  • Drain to Source Breakdown Voltage
    -30V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -2.3 V
  • Height
    1.17mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7145DP-T1-GE3 Description
The SI7145DP-T1-GE3 is a P-Channel 30 V (D-S) MOSFET.

SI7145DP-T1-GE3 Features
TrenchFET® power MOSFET
100 % Rg and UIS tested

SI7145DP-T1-GE3 Applications
Adaptor switch
- Notebook computers
SI7145DP-T1-GE3 More Descriptions
Single P-Channel 30 V 2.6 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
Trans MOSFET P-CH 30V 36.5A 8-Pin PowerPAK SO EP T/R
-30V 2.6mOhm@10V 60A P-Ch G-III | Siliconix / Vishay SI7145DP-T1-GE3
30V 60A 2.6mΩ@10V,25A P Channel PowerPAK-SO-8 MOSFETs ROHS
Power Field-Effect Transistor, 36.5A I(D), 30V, 0.0026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CH 30V 60A 2,6mOhm PwrPAKSO-8
Mosfet Transistor; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:2.3V; Power Dissipation:104W Rohs Compliant: Yes |Vishay SI7145DP-T1-GE3.
Product Comparison
The three parts on the right have similar specifications to SI7145DP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Configuration
    View Compare
  • SI7145DP-T1-GE3
    SI7145DP-T1-GE3
    Vishay Siliconix
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    S17-0173-Single
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    2.6mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    1
    6.25W Ta 104W Tc
    Single
    ENHANCEMENT MODE
    6.25W
    DRAIN
    27 ns
    P-Channel
    SWITCHING
    2.6m Ω @ 25A, 10V
    2.3V @ 250μA
    15660pF @ 15V
    60A Tc
    413nC @ 10V
    110ns
    30V
    4.5V 10V
    ±20V
    43 ns
    130 ns
    -60A
    -2.3V
    20V
    36.5A
    -30V
    150°C
    -2.3 V
    1.17mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7120DN-T1-GE3
    SI7120DN-T1-GE3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    -
    -
    -
    Cut Tape (CT)
    TrenchFET®
    2014
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    S-XDSO-C5
    1
    -
    -
    Single
    ENHANCEMENT MODE
    1.5W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    19m Ω @ 10A, 10V
    3.5V @ 250μA
    -
    6.3A Ta
    45nC @ 10V
    12ns
    -
    -
    -
    12 ns
    50 ns
    10A
    2.5V
    20V
    6.3A
    60V
    -
    -
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    PURE MATTE TIN
    150°C
    -55°C
    1.5W
    40A
    24 mJ
    -
    SI7145DP-T1-GE3 vs SI7120DN-T1-GE3
  • SI7123DN-T1-GE3
    SI7123DN-T1-GE3
    Vishay Siliconix
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    10.6mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    S-XDSO-C5
    1
    1
    1.5W Ta
    -
    ENHANCEMENT MODE
    1.5W
    DRAIN
    25 ns
    P-Channel
    SWITCHING
    10.6m Ω @ 15A, 4.5V
    1V @ 250μA
    3729pF @ 10V
    10.2A Ta
    90nC @ 4.5V
    88ns
    20V
    1.8V 4.5V
    ±8V
    88 ns
    82 ns
    -25A
    -1V
    8V
    -
    -20V
    -
    -
    1.04mm
    3.3mm
    3.3mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    40A
    -
    SINGLE WITH BUILT-IN DIODE
    SI7145DP-T1-GE3 vs SI7123DN-T1-GE3
  • SI7160DP-T1-E3
    SI7160DP-T1-E3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    8.7MOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-PDSO-C5
    1
    -
    5W Ta 27.7W Tc
    -
    ENHANCEMENT MODE
    5W
    DRAIN
    29 ns
    N-Channel
    SWITCHING
    8.7m Ω @ 15A, 10V
    2.5V @ 250μA
    2970pF @ 15V
    20A Tc
    66nC @ 10V
    115ns
    -
    4.5V 10V
    ±16V
    21 ns
    43 ns
    17.8A
    -
    16V
    -
    30V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    -
    -
    -
    60A
    20 mJ
    SINGLE WITH BUILT-IN DIODE
    SI7145DP-T1-GE3 vs SI7160DP-T1-E3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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