Vishay Siliconix SI7120DN-T1-E3

SI7120DN-T1-E3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 24 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6.3A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 40A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.

SI7120DN-T1-E3 Features
the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 40A.


SI7120DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7120DN-T1-E3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies