Vishay Siliconix SI7114DN-T1-E3

SI7114DN-T1-E3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 42 mJ.This device's continuous drain current (ID) is 18.3A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 60A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1V threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI7114DN-T1-E3 Features
the avalanche energy rating (Eas) is 42 mJ
a continuous drain current (ID) of 18.3A
the turn-off delay time is 45 ns
based on its rated peak drain current 60A.
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)


SI7114DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7114DN-T1-E3 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples