Vishay Siliconix SI7114ADN-T1-GE3

Name: SI7114ADN-T1-GE3
Brand: Vishay Siliconix
SKU: 2479296-SI7114ADN-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7114ADN-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2479296-SI7114ADN-T1-GE3

Description:: MOSFET N-CH 30V 35A PPAK 1212-8

ECAD Model:

Datasheet:: SI7114ADN-T1-GE3

Specifications

Vishay Siliconix SI7114ADN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7114ADN-T1-GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
8
JESD-30 Code
S-XDSO-C5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.7W Ta 39W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.7W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1230pF @ 15V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Rise Time
14ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
18.3A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
35A
Drain-source On Resistance-Max
0.0075Ohm
Pulsed Drain Current-Max (IDM)
60A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
45 mJ
Height
1.04mm
Length
3.05mm
Width
3.05mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SI7114ADN-T1-GE3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 45 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1230pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18.3A.35A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI7114ADN-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 18.3A
the turn-off delay time is 20 ns
based on its rated peak drain current 60A.
a threshold voltage of 3V
a 30V drain to source voltage (Vdss)

SI7114ADN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7114ADN-T1-GE3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SI7114ADN-T1-GE3 More Descriptions

Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R / MOSFET N-CH 30V 35A PPAK 1212-8
SI7114ADN-T1-GE3 N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin PowerPAK 1212 | Siliconix / Vishay SI7114ADN-T1-GE3
N-CH POWERPAK 1212-8 BWL 30V 7.5MOHM @ 10V- LEAD(PB) AND HALOGEN FREE
Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 18.3A, POWERPAK 1212;
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18.3A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to SI7114ADN-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Supplier Device Package

Weight

Resistance

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

Contact Plating

Drain to Source Breakdown Voltage

Nominal Vgs

Lead Free

Configuration

View Compare
SI7114ADN-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

yes

Active

1 (Unlimited)

5

EAR99

MATTE TIN

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

C BEND

260

30

8

S-XDSO-C5

1

1

3.7W Ta 39W Tc

Single

ENHANCEMENT MODE

3.7W

DRAIN

20 ns

N-Channel

SWITCHING

7.5m Ω @ 18A, 10V

2.5V @ 250μA

1230pF @ 15V

35A Tc

32nC @ 10V

14ns

30V

4.5V 10V

±20V

10 ns

20 ns

18.3A

3V

20V

35A

0.0075Ohm

60A

30V

45 mJ

1.04mm

3.05mm

3.05mm

Unknown

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI7156DP-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

PowerPAK® SO-8

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

1

5.4W Ta 83W Tc

Single

-

-

-

-

N-Channel

-

3.5mOhm @ 20A, 10V

3V @ 250μA

6900pF @ 20V

50A Tc

155nC @ 10V

-

40V

4.5V 10V

±20V

-

-

50A

-

20V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

PowerPAK® SO-8

506.605978mg

3.5mOhm

150°C

-55°C

6.9nF

3.5mOhm

3.5 mΩ

-

-

-

-

-

SI7114ADN-T1-GE3 vs SI7156DP-T1-GE3
SI7178DP-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

PowerPAK® SO-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2008

e3

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

R-XDSO-C5

1

1

6.25W Ta 104W Tc

Single

ENHANCEMENT MODE

6.25W

DRAIN

21 ns

N-Channel

SWITCHING

14m Ω @ 10A, 10V

4.5V @ 250μA

2870pF @ 50V

60A Tc

72nC @ 10V

10ns

-

10V

±20V

11 ns

27 ns

60A

4.5V

20V

-

-

-

-

-

1.04mm

4.9mm

5.89mm

Unknown

No

ROHS3 Compliant

-

506.605978mg

14mOhm

-

-

-

-

-

Tin

100V

4.5 V

Lead Free

-

SI7114ADN-T1-GE3 vs SI7178DP-T1-GE3
SI7123DN-T1-GE3

Vishay Siliconix

12 Weeks

Surface Mount

Surface Mount

PowerPAK® 1212-8

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

-

Other Transistors

MOSFET (Metal Oxide)

DUAL

C BEND

260

40

8

S-XDSO-C5

1

1

1.5W Ta

-

ENHANCEMENT MODE

1.5W

DRAIN

25 ns

P-Channel

SWITCHING

10.6m Ω @ 15A, 4.5V

1V @ 250μA

3729pF @ 10V

10.2A Ta

90nC @ 4.5V

88ns

20V

1.8V 4.5V

±8V

88 ns

82 ns

-25A

-1V

8V

-

-

40A

-

-

1.04mm

3.3mm

3.3mm

Unknown

No

ROHS3 Compliant

-

-

10.6mOhm

-

-

-

-

-

Tin

-20V

-

Lead Free

SINGLE WITH BUILT-IN DIODE

SI7114ADN-T1-GE3 vs SI7123DN-T1-GE3

Certification

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SI7114A~~(3)~~
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Part Number	Manufacturers	Description	Price
SI7114ADN-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK 1212-8 RoHS: Compliant	3000 $0.3828
SI7114ADN-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK 1212-8 RoHS: Compliant	1 $1.09 10 $0.952 100 $0.7342 500 $0.54384 1000 $0.43507
SI7114ADN-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK 1212-8 RoHS: Compliant	1 $1.09 10 $0.952 100 $0.7342 500 $0.54384 1000 $0.43507
SI7114ADN-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000 $0.38 6000 $0.29231 9000 $0.23265 15000 $0.19655 30000 $0.18095 75000 $0.17538 150000 $0.17015
SI7114ADN-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000 $0.3489 6000 $0.3379 12000 $0.3249 18000 $0.3159 30000 $0.3069
SI7114ADN-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000 $0.6909 6000 $0.4719 12000 $0.4059 18000 $0.3749 30000 $0.3489
SI7114ADN-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 11.7A, POWERPAK, FULL REEL,	1 $0.4 3000 $0.4
SI7114ADN-T1-GE3. DISTI #	Vishay Intertechnologies	Transistor Polarity:N Channel, Continuous Drain C	1 $0.4 3000 $0.4
SI7114ADN-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK 1212-8 RoHS: Compliant	3000 $0.463 6000 $0.447
SI7114ADN-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	1 $0.96 10 $0.766 100 $0.581 500 $0.48 1000 $0.401 3000 $0.4
SI7114ADN-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 11.7A, POWERPAK, FULL REEL RoHS: Compliant	3000 $0.606
SI7114ADN-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
SI7114ADN-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 11.7A, POWERPAK, RoHS: Compliant	3000 $0.352

Vishay Siliconix SI7114ADN-T1-GE3

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