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NTB125N02R

ON Semiconductor NTB125N02R

Part Number:
NTB125N02R
Manufacturer:
ON Semiconductor
Ventron No:
3813710-NTB125N02R
Description:
MOSFET N-CH 24V 15.9A D2PAK
ECAD Model:
Datasheet:
NTB125N02R

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Specifications
ON Semiconductor NTB125N02R technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB125N02R.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    2
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    24V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    235
  • Reach Compliance Code
    not_compliant
  • Current Rating
    125A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    1.98W Ta 113.6W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.72W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.6m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3440pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    95A Ta 120.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 4.5V
  • Rise Time
    39ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    21 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    120.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    95A
  • Drain-source On Resistance-Max
    0.0062Ohm
  • Drain to Source Breakdown Voltage
    24V
  • Pulsed Drain Current-Max (IDM)
    250A
  • Avalanche Energy Rating (Eas)
    120 mJ
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
NTB125N02R Description
NTB125N02R, manufactured by On Semiconductor. Its category belongs to Electronic Components ICs. It is applied to many fields, like Communications equipment Datacom modules Industrial Grid infrastructure Enterprise systems Datacenter & enterprise computing . And the main parameters of this part is MOSFETs- Power and Small Signal 24V 125A N-channel No-Cancel/No-Return. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).

NTB125N02R Features
Pb?Free Packages are Available
Low Ciss to Minimize Driver Loss
Planar HD3e Process for Fast Switching Performance
Optimized Qgd and RDS(on) for Shoot?through Protection
Body Diode for Low trr and Qrr and Optimized for SynchronousOperation

NTB125N02R Applications
Industrial
Enterprise systems
Communications equipment
NTB125N02R More Descriptions
MOSFETs- Power and Small Signal 24V 125A N-Channel No-Cancel/No-Return
MOSFET N-CH 24V 95A/120.5A D2PAK
Power Field-Effect Transistor, 95A I(D), 25V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to NTB125N02R.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    HTS Code
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    Lifecycle Status
    Pbfree Code
    ECCN Code
    Additional Feature
    Surface Mount
    Terminal Position
    Configuration
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    View Compare
  • NTB125N02R
    NTB125N02R
    ON Semiconductor
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2006
    e0
    Obsolete
    3 (168 Hours)
    2
    Tin/Lead (Sn/Pb)
    8541.29.00.95
    FET General Purpose Power
    24V
    MOSFET (Metal Oxide)
    GULL WING
    235
    not_compliant
    125A
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    1.98W Ta 113.6W Tc
    Single
    ENHANCEMENT MODE
    2.72W
    DRAIN
    N-Channel
    SWITCHING
    4.6m Ω @ 20A, 10V
    2V @ 250μA
    3440pF @ 20V
    95A Ta 120.5A Tc
    28nC @ 4.5V
    39ns
    4.5V 10V
    ±20V
    21 ns
    27 ns
    120.5A
    20V
    95A
    0.0062Ohm
    24V
    250A
    120 mJ
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTB13N10T4G
    NTB13N10T4G
    ON Semiconductor
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2005
    e3
    Obsolete
    1 (Unlimited)
    2
    Tin (Sn)
    8541.29.00.95
    FET General Purpose Powers
    100V
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    13A
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    64.7W Ta
    Single
    ENHANCEMENT MODE
    64.7W
    DRAIN
    N-Channel
    SWITCHING
    165m Ω @ 6.5A, 10V
    4V @ 250μA
    550pF @ 25V
    13A Ta
    20nC @ 10V
    40ns
    10V
    ±20V
    36 ns
    20 ns
    13A
    20V
    -
    0.165Ohm
    100V
    -
    85 mJ
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NTB125N02R vs NTB13N10T4G
  • NTB18N06LT4G
    NTB18N06LT4G
    ON Semiconductor
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2005
    e3
    Obsolete
    1 (Unlimited)
    2
    Tin (Sn)
    -
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    15A
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    48.4W Tc
    Single
    ENHANCEMENT MODE
    48.4W
    DRAIN
    N-Channel
    SWITCHING
    100m Ω @ 7.5A, 5V
    2V @ 250μA
    440pF @ 25V
    15A Tc
    20nC @ 5V
    121ns
    5V
    ±10V
    42 ns
    11 ns
    15A
    10V
    -
    -
    60V
    45A
    -
    RoHS Compliant
    Lead Free
    LAST SHIPMENTS (Last Updated: 4 days ago)
    yes
    EAR99
    LOGIC LEVEL COMPATIBLE
    -
    -
    -
    -
    -
    NTB125N02R vs NTB18N06LT4G
  • NTB18N06T4
    NTB18N06T4
    ON Semiconductor
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    e0
    Obsolete
    1 (Unlimited)
    2
    TIN LEAD
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    240
    -
    -
    30
    3
    R-PSSO-G2
    COMMERCIAL
    1
    48.4W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    90m Ω @ 7.5A, 10V
    4V @ 250μA
    450pF @ 25V
    15A Tc
    22nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    15A
    0.09Ohm
    -
    45A
    61 mJ
    Non-RoHS Compliant
    -
    -
    no
    -
    -
    YES
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    60V
    60V
    NTB125N02R vs NTB18N06T4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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