NTB13N10G

ON Semiconductor NTB13N10G

Part Number:
NTB13N10G
Manufacturer:
ON Semiconductor
Ventron No:
4539009-NTB13N10G
Description:
MOSFET N-CH 100V 13A D2PAK
ECAD Model:
Datasheet:
NTB13N10G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor NTB13N10G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB13N10G.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    MATTE TIN
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    64.7W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    165m Ω @ 6.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    550pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    13A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    13A
  • Drain-source On Resistance-Max
    0.165Ohm
  • Pulsed Drain Current-Max (IDM)
    39A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    85 mJ
  • RoHS Status
    ROHS3 Compliant
Description
NTB13N10G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 85 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 550pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 13A.Peak drain current is 39A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

NTB13N10G Features
the avalanche energy rating (Eas) is 85 mJ
based on its rated peak drain current 39A.
a 100V drain to source voltage (Vdss)


NTB13N10G Applications
There are a lot of Rochester Electronics, LLC
NTB13N10G applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
NTB13N10G More Descriptions
Tube Surface Mount N-Channel Single Mosfet Transistor 13A Ta 13A 64.7W 36ns
MOSFETs- Power and Small Signal 100V 13A N-Channel
Power Field-Effect Transistor, 13A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to NTB13N10G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lifecycle Status
    Mount
    Number of Pins
    Published
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Lead Free
    HTS Code
    JEDEC-95 Code
    View Compare
  • NTB13N10G
    NTB13N10G
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    e3
    no
    Obsolete
    1 (Unlimited)
    2
    MATTE TIN
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    unknown
    30
    3
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    64.7W Ta
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    165m Ω @ 6.5A, 10V
    4V @ 250μA
    550pF @ 25V
    13A Ta
    20nC @ 10V
    100V
    10V
    ±20V
    13A
    0.165Ohm
    39A
    100V
    85 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTB18N06LT4G
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    -
    48.4W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    100m Ω @ 7.5A, 5V
    2V @ 250μA
    440pF @ 25V
    15A Tc
    20nC @ 5V
    -
    5V
    ±10V
    -
    -
    45A
    -
    -
    RoHS Compliant
    LAST SHIPMENTS (Last Updated: 4 days ago)
    Surface Mount
    3
    2005
    EAR99
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    60V
    15A
    Single
    48.4W
    121ns
    42 ns
    11 ns
    15A
    10V
    60V
    Lead Free
    -
    -
  • NTB18N06T4
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    e0
    no
    Obsolete
    1 (Unlimited)
    2
    TIN LEAD
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    240
    -
    30
    3
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    48.4W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    90m Ω @ 7.5A, 10V
    4V @ 250μA
    450pF @ 25V
    15A Tc
    22nC @ 10V
    60V
    10V
    ±20V
    15A
    0.09Ohm
    45A
    60V
    61 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTB125N02RT4G
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    -
    30
    3
    R-PSSO-G2
    Not Qualified
    1
    -
    1.98W Ta 113.6W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    4.6m Ω @ 20A, 10V
    2V @ 250μA
    3440pF @ 20V
    95A Ta 120.5A Tc
    28nC @ 4.5V
    -
    4.5V 10V
    ±20V
    95A
    0.0062Ohm
    250A
    -
    120 mJ
    RoHS Compliant
    OBSOLETE (Last Updated: 4 days ago)
    Surface Mount
    3
    2006
    -
    -
    FET General Purpose Power
    24V
    125A
    Single
    2.72W
    39ns
    21 ns
    27 ns
    125A
    20V
    24V
    Lead Free
    8541.29.00.95
    TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 17 January 2024

    DS18B20 Digital Temperature Sensor Structure, Features, Applications and More

    Ⅰ. What is DS18B20?Ⅱ. Internal structure of DS18B20Ⅲ. Features of DS18B20 sensorⅣ. How does DS18B20 work?Ⅴ. Symbol, footprint and pin configuration of DS18B20Ⅵ. Driving principle of DS18B20Ⅶ. Where...
  • 18 January 2024

    What is the BTN8982TA Bridge and How Does it Work?

    Ⅰ. Introduction to BTN8982TAⅡ. Block diagram of BTN8982TAⅢ. Specifications of BTN8982TAⅣ. Working principle of BTN8982TAⅤ. BTN8982TA symbol, footprint and pin configurationⅥ. Features of BTN8982TAⅦ. Application fields of BTN8982TABTN8982TA...
  • 18 January 2024

    TPS51200DRCR: Advanced Regulator Solution for DDR Termination

    Ⅰ. Overview of TPS51200DRCRⅡ. Technical parameters of TPS51200DRCRⅢ. What are the advantages of TPS51200DRCR?Ⅳ. Absolute maximum ratings of TPS51200DRCRⅤ. How to use TPS51200DRCR?Ⅵ. Where is TPS51200DRCR used?Ⅶ. TPS51200DRCR...
  • 19 January 2024

    TXB0104PWR Alternatives, Package, Specifications and Applications

    Ⅰ. TXB0104PWR overviewⅡ. Operating principle of TXB0104PWRⅢ. Package of TXB0104PWRⅣ. Specifications of TXB0104PWRⅤ. How to use TXB0104PWR?Ⅵ. What are the applications of TXB0104PWR?Ⅶ. How does TXB0104PWR realize automatic...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.