ON Semiconductor NTB13N10G
- Part Number:
- NTB13N10G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 4539009-NTB13N10G
- Description:
- MOSFET N-CH 100V 13A D2PAK
- Datasheet:
- NTB13N10G
ON Semiconductor NTB13N10G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB13N10G.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max64.7W Ta
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs165m Ω @ 6.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
- Current - Continuous Drain (Id) @ 25°C13A Ta
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)13A
- Drain-source On Resistance-Max0.165Ohm
- Pulsed Drain Current-Max (IDM)39A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)85 mJ
- RoHS StatusROHS3 Compliant
NTB13N10G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 85 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 550pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 13A.Peak drain current is 39A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
NTB13N10G Features
the avalanche energy rating (Eas) is 85 mJ
based on its rated peak drain current 39A.
a 100V drain to source voltage (Vdss)
NTB13N10G Applications
There are a lot of Rochester Electronics, LLC
NTB13N10G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 85 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 550pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 13A.Peak drain current is 39A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
NTB13N10G Features
the avalanche energy rating (Eas) is 85 mJ
based on its rated peak drain current 39A.
a 100V drain to source voltage (Vdss)
NTB13N10G Applications
There are a lot of Rochester Electronics, LLC
NTB13N10G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
NTB13N10G More Descriptions
Tube Surface Mount N-Channel Single Mosfet Transistor 13A Ta 13A 64.7W 36ns
MOSFETs- Power and Small Signal 100V 13A N-Channel
Power Field-Effect Transistor, 13A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 100V 13A N-Channel
Power Field-Effect Transistor, 13A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to NTB13N10G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusMountNumber of PinsPublishedECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeHTS CodeJEDEC-95 CodeView Compare
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NTB13N10GSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubee3noObsolete1 (Unlimited)2MATTE TINMOSFET (Metal Oxide)SINGLEGULL WING260unknown303R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE64.7W TaENHANCEMENT MODEDRAINN-ChannelSWITCHING165m Ω @ 6.5A, 10V4V @ 250μA550pF @ 25V13A Ta20nC @ 10V100V10V±20V13A0.165Ohm39A100V85 mJROHS3 Compliant---------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)2Tin (Sn)MOSFET (Metal Oxide)-GULL WINGNOT SPECIFIED-NOT SPECIFIED3R-PSSO-G2Not Qualified1-48.4W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING100m Ω @ 7.5A, 5V2V @ 250μA440pF @ 25V15A Tc20nC @ 5V-5V±10V--45A--RoHS CompliantLAST SHIPMENTS (Last Updated: 4 days ago)Surface Mount32005EAR99LOGIC LEVEL COMPATIBLEFET General Purpose Power60V15ASingle48.4W121ns42 ns11 ns15A10V60VLead Free--
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)e0noObsolete1 (Unlimited)2TIN LEADMOSFET (Metal Oxide)SINGLEGULL WING240-303R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE48.4W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING90m Ω @ 7.5A, 10V4V @ 250μA450pF @ 25V15A Tc22nC @ 10V60V10V±20V15A0.09Ohm45A60V61 mJNon-RoHS Compliant--------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)2Tin (Sn)MOSFET (Metal Oxide)-GULL WING260-303R-PSSO-G2Not Qualified1-1.98W Ta 113.6W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.6m Ω @ 20A, 10V2V @ 250μA3440pF @ 20V95A Ta 120.5A Tc28nC @ 4.5V-4.5V 10V±20V95A0.0062Ohm250A-120 mJRoHS CompliantOBSOLETE (Last Updated: 4 days ago)Surface Mount32006--FET General Purpose Power24V125ASingle2.72W39ns21 ns27 ns125A20V24VLead Free8541.29.00.95TO-220AB
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