Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTB18N06LT4G
NTB18N06LT4G

ON Semiconductor NTB18N06LT4G

Part Number:
NTB18N06LT4G
Manufacturer:
ON Semiconductor
Ventron No:
2490757-NTB18N06LT4G
Description:
MOSFET N-CH 60V 15A D2PAK
ECAD Model:
Datasheet:
NTB18N06LT4G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor NTB18N06LT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB18N06LT4G.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 4 days ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    15A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    48.4W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    48.4W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 7.5A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    440pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    15A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 5V
  • Rise Time
    121ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    42 ns
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    15A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    45A
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
NTB18N06LT4G Description   NTB18N06LT4G N-channel MOSFET is based on an original, unique vertical structure. NTB18N06LT4G MOSFET results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. ON Semiconductor NTB18N06LT4G is utilized in Switching applications.     NTB18N06LT4G Features   Power Motor Controls Bridge Circuits Converters Power Supplies Pb-Free Packages are Available     NTB18N06LT4G Applications   Notebook PC Synchronous Buck for Notebook V core and Server Notebook Battery Pack Load Switch
NTB18N06LT4G More Descriptions
Power MOSFET 60V 15A 100 mOhm Single N-Channel D2PAK Logic Level
Trans MOSFET N-CH 60V 15A 3-Pin (2 Tab) D2PAK T/R
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:1.6V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NTB18N06LT4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Reach Compliance Code
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    HTS Code
    JEDEC-95 Code
    View Compare
  • NTB18N06LT4G
    NTB18N06LT4G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 4 days ago)
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    15A
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    48.4W Tc
    Single
    ENHANCEMENT MODE
    48.4W
    DRAIN
    N-Channel
    SWITCHING
    100m Ω @ 7.5A, 5V
    2V @ 250μA
    440pF @ 25V
    15A Tc
    20nC @ 5V
    121ns
    5V
    ±10V
    42 ns
    11 ns
    15A
    10V
    60V
    45A
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTB18N06L
    NTB18N06L
    ON Semiconductor
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tube
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    240
    -
    30
    3
    R-PSSO-G2
    Not Qualified
    1
    48.4W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    100m Ω @ 7.5A, 5V
    2V @ 250μA
    440pF @ 25V
    15A Tc
    20nC @ 5V
    -
    5V
    ±10V
    -
    -
    -
    -
    -
    45A
    Non-RoHS Compliant
    -
    YES
    SINGLE
    not_compliant
    SINGLE WITH BUILT-IN DIODE
    60V
    15A
    0.1Ohm
    60V
    61 mJ
    -
    -
    NTB18N06LT4G vs NTB18N06L
  • NTB13N10T4G
    NTB13N10T4G
    ON Semiconductor
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2005
    e3
    -
    Obsolete
    1 (Unlimited)
    2
    -
    Tin (Sn)
    -
    FET General Purpose Powers
    100V
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    13A
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    64.7W Ta
    Single
    ENHANCEMENT MODE
    64.7W
    DRAIN
    N-Channel
    SWITCHING
    165m Ω @ 6.5A, 10V
    4V @ 250μA
    550pF @ 25V
    13A Ta
    20nC @ 10V
    40ns
    10V
    ±20V
    36 ns
    20 ns
    13A
    20V
    100V
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    0.165Ohm
    -
    85 mJ
    8541.29.00.95
    -
    NTB18N06LT4G vs NTB13N10T4G
  • NTB125N02RT4G
    NTB125N02RT4G
    ON Semiconductor
    OBSOLETE (Last Updated: 4 days ago)
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    Tin (Sn)
    -
    FET General Purpose Power
    24V
    MOSFET (Metal Oxide)
    GULL WING
    260
    125A
    30
    3
    R-PSSO-G2
    Not Qualified
    1
    1.98W Ta 113.6W Tc
    Single
    ENHANCEMENT MODE
    2.72W
    DRAIN
    N-Channel
    SWITCHING
    4.6m Ω @ 20A, 10V
    2V @ 250μA
    3440pF @ 20V
    95A Ta 120.5A Tc
    28nC @ 4.5V
    39ns
    4.5V 10V
    ±20V
    21 ns
    27 ns
    125A
    20V
    24V
    250A
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    95A
    0.0062Ohm
    -
    120 mJ
    8541.29.00.95
    TO-220AB
    NTB18N06LT4G vs NTB125N02RT4G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for NTB18N06LT4G
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.