NTB18N06L

ON Semiconductor NTB18N06L

Part Number:
NTB18N06L
Manufacturer:
ON Semiconductor
Ventron No:
2851986-NTB18N06L
Description:
MOSFET N-CH 60V 15A D2PAK
ECAD Model:
Datasheet:
NTB18N06L

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Specifications
ON Semiconductor NTB18N06L technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB18N06L.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2005
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    48.4W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 7.5A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    440pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    15A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 5V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±10V
  • Drain Current-Max (Abs) (ID)
    15A
  • Drain-source On Resistance-Max
    0.1Ohm
  • Pulsed Drain Current-Max (IDM)
    45A
  • DS Breakdown Voltage-Min
    60V
  • Avalanche Energy Rating (Eas)
    61 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
NTB18N06L Description
Designed for use in power supplies, converters, power motor controllers, and bridge circuits where low voltage, high speed switching is required.

NTB18N06L Features   Converters
Bridge Circuits
Power Supplies
Power Motor Controls
Pb-Free Packages are Available

NTB18N06L Applications
Converters
Bridge Circuits
Power Supplies
Power Motor Controls
NTB18N06L More Descriptions
MOSFETs- Power and Small Signal 60V 15A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 1.47K OHM 1% 1/4W 1206
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):100mohm; Package/Case:D2-PAK; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to NTB18N06L.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    HTS Code
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Lead Free
    Pbfree Code
    View Compare
  • NTB18N06L
    NTB18N06L
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    2005
    e0
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    240
    not_compliant
    30
    3
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    48.4W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    100m Ω @ 7.5A, 5V
    2V @ 250μA
    440pF @ 25V
    15A Tc
    20nC @ 5V
    60V
    5V
    ±10V
    15A
    0.1Ohm
    45A
    60V
    61 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTB125N02R
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2006
    e0
    Obsolete
    3 (168 Hours)
    2
    -
    Tin/Lead (Sn/Pb)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    235
    not_compliant
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    -
    1.98W Ta 113.6W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    4.6m Ω @ 20A, 10V
    2V @ 250μA
    3440pF @ 20V
    95A Ta 120.5A Tc
    28nC @ 4.5V
    -
    4.5V 10V
    ±20V
    95A
    0.0062Ohm
    250A
    -
    120 mJ
    Non-RoHS Compliant
    Surface Mount
    3
    8541.29.00.95
    24V
    125A
    Single
    2.72W
    39ns
    21 ns
    27 ns
    120.5A
    20V
    24V
    Contains Lead
    -
  • NTB13N10T4G
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2005
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    Tin (Sn)
    -
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    -
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    -
    64.7W Ta
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    165m Ω @ 6.5A, 10V
    4V @ 250μA
    550pF @ 25V
    13A Ta
    20nC @ 10V
    -
    10V
    ±20V
    -
    0.165Ohm
    -
    -
    85 mJ
    RoHS Compliant
    Surface Mount
    3
    8541.29.00.95
    100V
    13A
    Single
    64.7W
    40ns
    36 ns
    20 ns
    13A
    20V
    100V
    Lead Free
    -
  • NTB18N06T4
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    e0
    Obsolete
    1 (Unlimited)
    2
    -
    TIN LEAD
    -
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    240
    -
    30
    3
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    48.4W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    90m Ω @ 7.5A, 10V
    4V @ 250μA
    450pF @ 25V
    15A Tc
    22nC @ 10V
    60V
    10V
    ±20V
    15A
    0.09Ohm
    45A
    60V
    61 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    no
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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