ON Semiconductor NTB18N06L
- Part Number:
- NTB18N06L
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2851986-NTB18N06L
- Description:
- MOSFET N-CH 60V 15A D2PAK
- Datasheet:
- NTB18N06L
ON Semiconductor NTB18N06L technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB18N06L.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max48.4W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 7.5A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±10V
- Drain Current-Max (Abs) (ID)15A
- Drain-source On Resistance-Max0.1Ohm
- Pulsed Drain Current-Max (IDM)45A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)61 mJ
- RoHS StatusNon-RoHS Compliant
NTB18N06L Description
Designed for use in power supplies, converters, power motor controllers, and bridge circuits where low voltage, high speed switching is required.
NTB18N06L Features Converters
Bridge Circuits
Power Supplies
Power Motor Controls
Pb-Free Packages are Available
NTB18N06L Applications
Converters
Bridge Circuits
Power Supplies
Power Motor Controls
Designed for use in power supplies, converters, power motor controllers, and bridge circuits where low voltage, high speed switching is required.
NTB18N06L Features Converters
Bridge Circuits
Power Supplies
Power Motor Controls
Pb-Free Packages are Available
NTB18N06L Applications
Converters
Bridge Circuits
Power Supplies
Power Motor Controls
NTB18N06L More Descriptions
MOSFETs- Power and Small Signal 60V 15A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 1.47K OHM 1% 1/4W 1206
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):100mohm; Package/Case:D2-PAK; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 1.47K OHM 1% 1/4W 1206
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):100mohm; Package/Case:D2-PAK; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: No
The three parts on the right have similar specifications to NTB18N06L.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsHTS CodeVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreePbfree CodeView Compare
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NTB18N06LSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTube2005e0Obsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING240not_compliant303R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE48.4W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING100m Ω @ 7.5A, 5V2V @ 250μA440pF @ 25V15A Tc20nC @ 5V60V5V±10V15A0.1Ohm45A60V61 mJNon-RoHS Compliant----------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTube2006e0Obsolete3 (168 Hours)2-Tin/Lead (Sn/Pb)-FET General Purpose PowerMOSFET (Metal Oxide)-GULL WING235not_compliantNOT SPECIFIED3R-PSSO-G2Not Qualified1-1.98W Ta 113.6W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.6m Ω @ 20A, 10V2V @ 250μA3440pF @ 20V95A Ta 120.5A Tc28nC @ 4.5V-4.5V 10V±20V95A0.0062Ohm250A-120 mJNon-RoHS CompliantSurface Mount38541.29.00.9524V125ASingle2.72W39ns21 ns27 ns120.5A20V24VContains Lead-
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)2005e3Obsolete1 (Unlimited)2-Tin (Sn)-FET General Purpose PowersMOSFET (Metal Oxide)-GULL WINGNOT SPECIFIED-NOT SPECIFIED3R-PSSO-G2Not Qualified1-64.7W TaENHANCEMENT MODEDRAINN-ChannelSWITCHING165m Ω @ 6.5A, 10V4V @ 250μA550pF @ 25V13A Ta20nC @ 10V-10V±20V-0.165Ohm--85 mJRoHS CompliantSurface Mount38541.29.00.95100V13ASingle64.7W40ns36 ns20 ns13A20V100VLead Free-
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)-e0Obsolete1 (Unlimited)2-TIN LEAD--MOSFET (Metal Oxide)SINGLEGULL WING240-303R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE48.4W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING90m Ω @ 7.5A, 10V4V @ 250μA450pF @ 25V15A Tc22nC @ 10V60V10V±20V15A0.09Ohm45A60V61 mJNon-RoHS Compliant--------------no
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