ON Semiconductor NTB125N02RT4G

Name: NTB125N02RT4G
Brand: ON Semiconductor
SKU: 2488616-NTB125N02RT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTB125N02RT4G

Manufacturer:: ON Semiconductor

Ventron No:: 2488616-NTB125N02RT4G

Description:: MOSFET N-CH 24V 15.9A D2PAK

ECAD Model:

Datasheet:: NTB125N02RT4G

Specifications

ON Semiconductor NTB125N02RT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB125N02RT4G.

Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
24V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
125A
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
1.98W Ta 113.6W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.72W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3440pF @ 20V
Current - Continuous Drain (Id) @ 25°C
95A Ta 120.5A Tc
Gate Charge (Qg) (Max) @ Vgs
28nC @ 4.5V
Rise Time
39ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
21 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
125A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
95A
Drain-source On Resistance-Max
0.0062Ohm
Drain to Source Breakdown Voltage
24V
Pulsed Drain Current-Max (IDM)
250A
Avalanche Energy Rating (Eas)
120 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NTB125N02RT4G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 120 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3440pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 125A.With a drain-source breakdown voltage of 24V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 24V.95A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 27 ns.Peak drain current for this device is 250A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NTB125N02RT4G Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 125A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 250A.

NTB125N02RT4G Applications
There are a lot of ON Semiconductor
NTB125N02RT4G applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

NTB125N02RT4G More Descriptions

Power MOSFET 125 Amps, 24 Volts, N-channel D2PAK and TO-220
Trans MOSFET N-CH 24V 18.6A 3-Pin (2 Tab) D2PAK T/R
Power Field-Effect Transistor, 95A I(D), 25V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:125A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):3.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:2720mW ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTB125N02RT4G.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Reach Compliance Code

Surface Mount

ECCN Code

Additional Feature

Terminal Position

Configuration

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

View Compare
NTB125N02RT4G

ON Semiconductor

OBSOLETE (Last Updated: 4 days ago)

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Obsolete

1 (Unlimited)

2

Tin (Sn)

8541.29.00.95

FET General Purpose Power

24V

MOSFET (Metal Oxide)

GULL WING

260

125A

30

3

R-PSSO-G2

Not Qualified

1

1.98W Ta 113.6W Tc

Single

ENHANCEMENT MODE

2.72W

DRAIN

N-Channel

SWITCHING

4.6m Ω @ 20A, 10V

2V @ 250μA

3440pF @ 20V

95A Ta 120.5A Tc

28nC @ 4.5V

39ns

4.5V 10V

±20V

21 ns

27 ns

125A

TO-220AB

20V

95A

0.0062Ohm

24V

250A

120 mJ

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-
NTB125N02R

ON Semiconductor

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tube

2006

e0

-

Obsolete

3 (168 Hours)

2

Tin/Lead (Sn/Pb)

8541.29.00.95

FET General Purpose Power

24V

MOSFET (Metal Oxide)

GULL WING

235

125A

NOT SPECIFIED

3

R-PSSO-G2

Not Qualified

1

1.98W Ta 113.6W Tc

Single

ENHANCEMENT MODE

2.72W

DRAIN

N-Channel

SWITCHING

4.6m Ω @ 20A, 10V

2V @ 250μA

3440pF @ 20V

95A Ta 120.5A Tc

28nC @ 4.5V

39ns

4.5V 10V

±20V

21 ns

27 ns

120.5A

-

20V

95A

0.0062Ohm

24V

250A

120 mJ

Non-RoHS Compliant

Contains Lead

not_compliant

-

-

-

-

-

-

-

NTB125N02RT4G vs NTB125N02R
NTB18N06L

ON Semiconductor

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

2005

e0

-

Obsolete

1 (Unlimited)

2

Tin/Lead (Sn/Pb)

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

240

-

30

3

R-PSSO-G2

Not Qualified

1

48.4W Tc

-

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

100m Ω @ 7.5A, 5V

2V @ 250μA

440pF @ 25V

15A Tc

20nC @ 5V

-

5V

±10V

-

-

-

-

-

15A

0.1Ohm

-

45A

61 mJ

Non-RoHS Compliant

-

not_compliant

YES

EAR99

LOGIC LEVEL COMPATIBLE

SINGLE

SINGLE WITH BUILT-IN DIODE

60V

60V

NTB125N02RT4G vs NTB18N06L
NTB18N06LT4G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 4 days ago)

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2005

e3

yes

Obsolete

1 (Unlimited)

2

Tin (Sn)

-

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

15A

NOT SPECIFIED

3

R-PSSO-G2

Not Qualified

1

48.4W Tc

Single

ENHANCEMENT MODE

48.4W

DRAIN

N-Channel

SWITCHING

100m Ω @ 7.5A, 5V

2V @ 250μA

440pF @ 25V

15A Tc

20nC @ 5V

121ns

5V

±10V

42 ns

11 ns

15A

-

10V

-

-

60V

45A

-

RoHS Compliant

Lead Free

-

-

EAR99

LOGIC LEVEL COMPATIBLE

-

-

-

-

NTB125N02RT4G vs NTB18N06LT4G