ON Semiconductor NTB18N06T4
- Part Number:
- NTB18N06T4
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2488844-NTB18N06T4
- Description:
- MOSFET N-CH 60V 15A D2PAK
- ECAD Model:
-
- Datasheet:
- NTB18N06T4
ON Semiconductor NTB18N06T4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB18N06T4.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTIN LEAD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max48.4W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs90m Ω @ 7.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)15A
- Drain-source On Resistance-Max0.09Ohm
- Pulsed Drain Current-Max (IDM)45A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)61 mJ
- RoHS StatusNon-RoHS Compliant
NTB18N06T4 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 61 mJ.The maximum input capacitance of this device is 450pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 15A.There is no pulsed drain current maximum for this device based on its rated peak drain current 45A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
NTB18N06T4 Features
the avalanche energy rating (Eas) is 61 mJ
based on its rated peak drain current 45A.
a 60V drain to source voltage (Vdss)
NTB18N06T4 Applications
There are a lot of Rochester Electronics, LLC
NTB18N06T4 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 61 mJ.The maximum input capacitance of this device is 450pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 15A.There is no pulsed drain current maximum for this device based on its rated peak drain current 45A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
NTB18N06T4 Features
the avalanche energy rating (Eas) is 61 mJ
based on its rated peak drain current 45A.
a 60V drain to source voltage (Vdss)
NTB18N06T4 Applications
There are a lot of Rochester Electronics, LLC
NTB18N06T4 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
NTB18N06T4 More Descriptions
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 15A Tc 15A 48.4W 13ns
MOSFETs- Power and Small Signal 60V 15A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 15A I(D), 60V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 60V 15A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 15A I(D), 60V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to NTB18N06T4.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsPublishedECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeReach Compliance CodeLifecycle StatusView Compare
-
NTB18N06T4Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)e0noObsolete1 (Unlimited)2TIN LEADMOSFET (Metal Oxide)SINGLEGULL WING240303R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE48.4W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING90m Ω @ 7.5A, 10V4V @ 250μA450pF @ 25V15A Tc22nC @ 10V60V10V±20V15A0.09Ohm45A60V61 mJNon-RoHS Compliant-------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTubee3-Obsolete1 (Unlimited)2Tin (Sn)MOSFET (Metal Oxide)-GULL WING260403R-PSSO-G2Not Qualified1-48.4W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING100m Ω @ 7.5A, 5V2V @ 250μA440pF @ 25V15A Tc20nC @ 5V-5V±10V-0.1Ohm45A-61 mJRoHS CompliantSurface Mount32005EAR99LOGIC LEVEL COMPATIBLEFET General Purpose Power60V15ASingle48.4W121ns42 ns11 ns15A10V60VLead Free--
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubee0-Obsolete1 (Unlimited)2Tin/Lead (Sn/Pb)MOSFET (Metal Oxide)SINGLEGULL WING240303R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE48.4W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING100m Ω @ 7.5A, 5V2V @ 250μA440pF @ 25V15A Tc20nC @ 5V60V5V±10V15A0.1Ohm45A60V61 mJNon-RoHS Compliant--2005EAR99LOGIC LEVEL COMPATIBLEFET General Purpose Power-----------not_compliant-
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)2Tin (Sn)MOSFET (Metal Oxide)-GULL WINGNOT SPECIFIEDNOT SPECIFIED3R-PSSO-G2Not Qualified1-48.4W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING100m Ω @ 7.5A, 5V2V @ 250μA440pF @ 25V15A Tc20nC @ 5V-5V±10V--45A--RoHS CompliantSurface Mount32005EAR99LOGIC LEVEL COMPATIBLEFET General Purpose Power60V15ASingle48.4W121ns42 ns11 ns15A10V60VLead Free-LAST SHIPMENTS (Last Updated: 4 days ago)
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
11 March 2024
BTS50085-1TMA Specifications, Functions, Purpose and More
Ⅰ. What is BTS50085-1TMA?Ⅱ. Specifications of BTS50085-1TMAⅢ. What are the functions of BTS50085-1TMA?Ⅳ. Inverse load current operation of BTS50085-1TMAⅤ. Externally adjustable current limit of BTS50085-1TMAⅥ. How to use... -
11 March 2024
LM317: Ideal for Adjustable, High-Efficiency Three-Terminal Regulators
Ⅰ. Introduction to LM317Ⅱ. The function of LM317 adjustable voltage stabilized power supply voltage stabilizing circuitⅢ. Soft-start circuit of LM317Ⅳ. Minimum stable operating current of LM317Ⅴ. Calculation of... -
12 March 2024
MPU-6050 Manufacturer, Working Principle, Application and Package
Ⅰ. Introduction to MPU-6050Ⅱ. Manufacturer of MPU-6050Ⅲ. Internal block diagram of MPU-6050Ⅳ. How does the MPU-6050 work?Ⅴ. Where is MPU-6050 used?Ⅵ. Package of MPU-6050Ⅶ. How to reduce the... -
12 March 2024
74LS48 Function, Wiring Method, Application and 74LS48 vs 74HC48
Ⅰ. What is 74LS48?Ⅱ. 74LS48 function and principleⅢ. Wiring method of 74LS48Ⅳ. 74LS48 series logic function and truth tableⅤ. Counter example based on 74LS48Ⅵ. Where is 74LS48 used?Ⅶ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.