ON Semiconductor NTB13N10T4G

Name: NTB13N10T4G
Brand: ON Semiconductor
SKU: 2851550-NTB13N10T4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTB13N10T4G

Manufacturer:: ON Semiconductor

Ventron No:: 2851550-NTB13N10T4G

Description:: MOSFET N-CH 100V 13A D2PAK

ECAD Model:

Datasheet:: NTB13N10T4G

Specifications

ON Semiconductor NTB13N10T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB13N10T4G.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Powers
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
13A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
64.7W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
64.7W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
165m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
36 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
13A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.165Ohm
Drain to Source Breakdown Voltage
100V
Avalanche Energy Rating (Eas)
85 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NTB13N10T4G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 85 mJ.A device's maximal input capacitance is 550pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 13A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

NTB13N10T4G Features
the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns

NTB13N10T4G Applications
There are a lot of ON Semiconductor
NTB13N10T4G applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

NTB13N10T4G More Descriptions

MOSFET N-CH 100V 13A D2PAK
MOSFETs- Power and Small Signal 100V 13A N-Channel
Power Field-Effect Transistor, 13A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):165mohm; Package/Case:3-D2PAK; Power Dissipation, Pd:64.7W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTB13N10T4G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

ECCN Code

Additional Feature

Terminal Position

Reach Compliance Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Lifecycle Status

Pbfree Code

View Compare
NTB13N10T4G

ON Semiconductor

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2005

e3

Obsolete

1 (Unlimited)

2

Tin (Sn)

8541.29.00.95

FET General Purpose Powers

100V

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

13A

NOT SPECIFIED

3

R-PSSO-G2

Not Qualified

1

64.7W Ta

Single

ENHANCEMENT MODE

64.7W

DRAIN

N-Channel

SWITCHING

165m Ω @ 6.5A, 10V

4V @ 250μA

550pF @ 25V

13A Ta

20nC @ 10V

40ns

10V

±20V

36 ns

20 ns

13A

20V

0.165Ohm

100V

85 mJ

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
NTB18N06L

ON Semiconductor

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

2005

e0

Obsolete

1 (Unlimited)

2

Tin/Lead (Sn/Pb)

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

240

-

30

3

R-PSSO-G2

Not Qualified

1

48.4W Tc

-

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

100m Ω @ 7.5A, 5V

2V @ 250μA

440pF @ 25V

15A Tc

20nC @ 5V

-

5V

±10V

-

-

-

-

0.1Ohm

-

61 mJ

Non-RoHS Compliant

-

YES

EAR99

LOGIC LEVEL COMPATIBLE

SINGLE

not_compliant

SINGLE WITH BUILT-IN DIODE

60V

15A

45A

60V

-

-

NTB13N10T4G vs NTB18N06L
NTB18N06LT4G

ON Semiconductor

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2005

e3

Obsolete

1 (Unlimited)

2

Tin (Sn)

-

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

15A

NOT SPECIFIED

3

R-PSSO-G2

Not Qualified

1

48.4W Tc

Single

ENHANCEMENT MODE

48.4W

DRAIN

N-Channel

SWITCHING

100m Ω @ 7.5A, 5V

2V @ 250μA

440pF @ 25V

15A Tc

20nC @ 5V

121ns

5V

±10V

42 ns

11 ns

15A

10V

-

60V

-

RoHS Compliant

Lead Free

-

EAR99

LOGIC LEVEL COMPATIBLE

-

-

-

-

-

45A

-

LAST SHIPMENTS (Last Updated: 4 days ago)

yes

NTB13N10T4G vs NTB18N06LT4G
NTB18N06T4

ON Semiconductor

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

-

e0

Obsolete

1 (Unlimited)

2

TIN LEAD

-

-

-

MOSFET (Metal Oxide)

GULL WING

240

-

30

3

R-PSSO-G2

COMMERCIAL

1

48.4W Tc

-

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

90m Ω @ 7.5A, 10V

4V @ 250μA

450pF @ 25V

15A Tc

22nC @ 10V

-

10V

±20V

-

-

-

-

0.09Ohm

-

61 mJ

Non-RoHS Compliant

-

YES

-

-

SINGLE

-

SINGLE WITH BUILT-IN DIODE

60V

15A

45A

60V

-

no

NTB13N10T4G vs NTB18N06T4