IXYS IXFH80N20Q

Name: IXFH80N20Q
Brand: IXYS
SKU: 2483256-IXFH80N20Q
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXFH80N20Q

Manufacturer:: IXYS

Ventron No:: 2483256-IXFH80N20Q

Description:: MOSFET N-CH 200V 80A TO-247AD

ECAD Model:

Datasheet:: IXFH80N20Q

Specifications

IXYS IXFH80N20Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH80N20Q.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HiPerFET™
Published
2000
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
ECCN Code
EAR99
Resistance
28MOhm
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Current Rating
80A
Pin Count
3
Number of Elements
1
Power Dissipation-Max
360W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
28m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds
4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Rise Time
50ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
80A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IXFH80N20Q Overview
A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

IXFH80N20Q Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns

IXFH80N20Q Applications
There are a lot of IXYS
IXFH80N20Q applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IXFH80N20Q More Descriptions

Trans MOSFET N-CH Si 200V 80A 3-Pin(3 Tab) TO-247AD
Contact for details

Product Comparison

The three parts on the right have similar specifications to IXFH80N20Q.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Channels

Turn On Delay Time

Threshold Voltage

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

Max Junction Temperature (Tj)

Height

Reach Compliance Code

JESD-30 Code

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Length

Width

View Compare
IXFH80N20Q

IXYS

8 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

HiPerFET™

2000

e1

yes

Obsolete

Not Applicable

3

EAR99

28MOhm

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

FET General Purpose Power

200V

MOSFET (Metal Oxide)

80A

3

1

360W Tc

Single

ENHANCEMENT MODE

360W

DRAIN

N-Channel

SWITCHING

28m Ω @ 500mA, 10V

4V @ 4mA

4600pF @ 25V

80A Tc

180nC @ 10V

50ns

10V

±20V

20 ns

75 ns

80A

20V

200V

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXFH22N60P

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

HiPerFET™, PolarHT™

2006

e1

yes

Active

1 (Unlimited)

3

EAR99

-

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

-

600V

MOSFET (Metal Oxide)

22A

3

1

400W Tc

Single

ENHANCEMENT MODE

400W

DRAIN

N-Channel

SWITCHING

350m Ω @ 11A, 10V

5.5V @ 4mA

3600pF @ 25V

22A Tc

58nC @ 10V

20ns

10V

±30V

23 ns

60 ns

22A

30V

600V

-

ROHS3 Compliant

Lead Free

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

20 ns

5.5V

TO-247AD

66A

150°C

25.96mm

-

-

-

-

-

-

-

-

IXFH80N20Q vs IXFH22N60P
IXFH110N15T2

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

-

SILICON

-55°C~175°C TJ

Tube

TrenchT2™

2008

e1

yes

Active

1 (Unlimited)

3

EAR99

-

TIN SILVER COPPER

AVALANCHE RATED

-

-

MOSFET (Metal Oxide)

-

3

1

480W Tc

Single

ENHANCEMENT MODE

480W

DRAIN

N-Channel

SWITCHING

13m Ω @ 500mA, 10V

4.5V @ 250μA

8600pF @ 25V

110A Tc

150nC @ 10V

16ns

10V

±20V

18 ns

33 ns

110A

-

-

-

ROHS3 Compliant

-

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

-

-

-

TO-247AD

300A

-

-

unknown

R-PSFM-T3

150V

0.013Ohm

150V

800 mJ

-

-

IXFH80N20Q vs IXFH110N15T2
IXFH14N60P3

IXYS

24 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

HiPerFET™, Polar3™

2011

-

-

Active

1 (Unlimited)

3

-

-

-

AVALANCHE RATED

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

3

1

327W Tc

Single

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

540m Ω @ 7A, 10V

5V @ 1mA

1480pF @ 25V

14A Tc

25nC @ 10V

-

10V

±30V

-

43 ns

14A

30V

-

-

ROHS3 Compliant

-

-

-

-

-

21 ns

-

TO-247AD

-

-

21.46mm

-

-

600V

0.54Ohm

600V

700 mJ

16.26mm

5.3mm

IXFH80N20Q vs IXFH14N60P3