IXFH21N50

IXYS IXFH21N50

Part Number:
IXFH21N50
Manufacturer:
IXYS
Ventron No:
2849402-IXFH21N50
Description:
MOSFET N-CH 500V 21A TO-247AD
ECAD Model:
Datasheet:
IXFH21N50

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Specifications
IXYS IXFH21N50 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH21N50.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2002
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    250mOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    21A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    250m Ω @ 10.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    21A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    160nC @ 10V
  • Rise Time
    33ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    65 ns
  • Continuous Drain Current (ID)
    21A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-247AD
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    84A
  • Dual Supply Voltage
    500V
  • Recovery Time
    250 ns
  • Nominal Vgs
    4 V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXFH21N50 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 84A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFH21N50 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 84A.
a threshold voltage of 4V


IXFH21N50 Applications
There are a lot of IXYS
IXFH21N50 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IXFH21N50 More Descriptions
Trans MOSFET N-CH Si 500V 21A 3-Pin(3 Tab) TO-247AD
N Channel Mosfet, 500V, 21A, To-247Ad; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:21A; On Resistance Rds(On):0.25Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Ixys Semiconductor IXFH21N50
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 300W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Alternate Case Style: SOT-249; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 250mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 84A; Voltage Vgs th Max: 4V
Product Comparison
The three parts on the right have similar specifications to IXFH21N50.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    REACH SVHC
    RoHS Status
    Lead Free
    JESD-609 Code
    Terminal Finish
    Additional Feature
    JESD-30 Code
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    Number of Channels
    Turn On Delay Time
    Max Junction Temperature (Tj)
    Height
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Length
    Width
    View Compare
  • IXFH21N50
    IXFH21N50
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2002
    yes
    Not For New Designs
    Not Applicable
    3
    EAR99
    250mOhm
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    21A
    NOT SPECIFIED
    3
    Not Qualified
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    N-Channel
    SWITCHING
    250m Ω @ 10.5A, 10V
    4V @ 4mA
    4200pF @ 25V
    21A Tc
    160nC @ 10V
    33ns
    10V
    ±20V
    30 ns
    65 ns
    21A
    4V
    TO-247AD
    20V
    500V
    84A
    500V
    250 ns
    4 V
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH140N10P
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HiPerFET™, PolarHT™
    2006
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    11MOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3
    -
    1
    600W Tc
    Single
    ENHANCEMENT MODE
    600W
    DRAIN
    N-Channel
    SWITCHING
    11m Ω @ 70A, 10V
    5V @ 4mA
    4700pF @ 25V
    140A Tc
    155nC @ 10V
    50ns
    10V
    ±20V
    26 ns
    85 ns
    140A
    -
    TO-247AD
    20V
    100V
    300A
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    R-PSFM-T3
    2500 mJ
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH22N60P
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, PolarHT™
    2006
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    600V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    22A
    NOT SPECIFIED
    3
    Not Qualified
    1
    400W Tc
    Single
    ENHANCEMENT MODE
    400W
    DRAIN
    N-Channel
    SWITCHING
    350m Ω @ 11A, 10V
    5.5V @ 4mA
    3600pF @ 25V
    22A Tc
    58nC @ 10V
    20ns
    10V
    ±30V
    23 ns
    60 ns
    22A
    5.5V
    TO-247AD
    30V
    600V
    66A
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    -
    -
    1
    20 ns
    150°C
    25.96mm
    -
    -
    -
    -
    -
  • IXFH14N60P3
    24 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, Polar3™
    2011
    -
    Active
    1 (Unlimited)
    3
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3
    -
    1
    327W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    540m Ω @ 7A, 10V
    5V @ 1mA
    1480pF @ 25V
    14A Tc
    25nC @ 10V
    -
    10V
    ±30V
    -
    43 ns
    14A
    -
    TO-247AD
    30V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    AVALANCHE RATED
    -
    700 mJ
    -
    -
    21 ns
    -
    21.46mm
    600V
    0.54Ohm
    600V
    16.26mm
    5.3mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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