IXYS IXFH21N50 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH21N50.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2002
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- ECCN CodeEAR99
- Resistance250mOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating21A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs250m Ω @ 10.5A, 10V
- Vgs(th) (Max) @ Id4V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C21A Tc
- Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
- Rise Time33ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)21A
- Threshold Voltage4V
- JEDEC-95 CodeTO-247AD
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)84A
- Dual Supply Voltage500V
- Recovery Time250 ns
- Nominal Vgs4 V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFH21N50 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 84A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH21N50 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 84A.
a threshold voltage of 4V
IXFH21N50 Applications
There are a lot of IXYS
IXFH21N50 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 84A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFH21N50 Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 84A.
a threshold voltage of 4V
IXFH21N50 Applications
There are a lot of IXYS
IXFH21N50 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IXFH21N50 More Descriptions
Trans MOSFET N-CH Si 500V 21A 3-Pin(3 Tab) TO-247AD
N Channel Mosfet, 500V, 21A, To-247Ad; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:21A; On Resistance Rds(On):0.25Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Ixys Semiconductor IXFH21N50
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 300W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Alternate Case Style: SOT-249; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 250mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 84A; Voltage Vgs th Max: 4V
N Channel Mosfet, 500V, 21A, To-247Ad; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:21A; On Resistance Rds(On):0.25Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Ixys Semiconductor IXFH21N50
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 300W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Alternate Case Style: SOT-249; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 250mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 84A; Voltage Vgs th Max: 4V
The three parts on the right have similar specifications to IXFH21N50.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageRecovery TimeNominal VgsREACH SVHCRoHS StatusLead FreeJESD-609 CodeTerminal FinishAdditional FeatureJESD-30 CodeAvalanche Energy Rating (Eas)Radiation HardeningNumber of ChannelsTurn On Delay TimeMax Junction Temperature (Tj)HeightDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinLengthWidthView Compare
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IXFH21N508 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2002yesNot For New DesignsNot Applicable3EAR99250mOhmFET General Purpose Power500VMOSFET (Metal Oxide)NOT SPECIFIED21ANOT SPECIFIED3Not Qualified1300W TcSingleENHANCEMENT MODE300WDRAINN-ChannelSWITCHING250m Ω @ 10.5A, 10V4V @ 4mA4200pF @ 25V21A Tc160nC @ 10V33ns10V±20V30 ns65 ns21A4VTO-247AD20V500V84A500V250 ns4 VNo SVHCROHS3 CompliantLead Free----------------
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30 WeeksThrough HoleThrough HoleTO-247-3-SILICON-55°C~175°C TJTubeHiPerFET™, PolarHT™2006yesActive1 (Unlimited)3EAR9911MOhm--MOSFET (Metal Oxide)---3-1600W TcSingleENHANCEMENT MODE600WDRAINN-ChannelSWITCHING11m Ω @ 70A, 10V5V @ 4mA4700pF @ 25V140A Tc155nC @ 10V50ns10V±20V26 ns85 ns140A-TO-247AD20V100V300A----ROHS3 CompliantLead Freee1Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDR-PSFM-T32500 mJNo---------
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30 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006yesActive1 (Unlimited)3EAR99--600VMOSFET (Metal Oxide)NOT SPECIFIED22ANOT SPECIFIED3Not Qualified1400W TcSingleENHANCEMENT MODE400WDRAINN-ChannelSWITCHING350m Ω @ 11A, 10V5.5V @ 4mA3600pF @ 25V22A Tc58nC @ 10V20ns10V±30V23 ns60 ns22A5.5VTO-247AD30V600V66A----ROHS3 CompliantLead Freee1Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED---120 ns150°C25.96mm-----
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24 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™, Polar3™2011-Active1 (Unlimited)3--FET General Purpose Power-MOSFET (Metal Oxide)---3-1327W TcSingleENHANCEMENT MODE-DRAINN-ChannelSWITCHING540m Ω @ 7A, 10V5V @ 1mA1480pF @ 25V14A Tc25nC @ 10V-10V±30V-43 ns14A-TO-247AD30V------ROHS3 Compliant---AVALANCHE RATED-700 mJ--21 ns-21.46mm600V0.54Ohm600V16.26mm5.3mm
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