IXYS IXFH150N17T
- Part Number:
- IXFH150N17T
- Manufacturer:
- IXYS
- Ventron No:
- 3586703-IXFH150N17T
- Description:
- MOSFET N-CH 175V 150A TO-247
- Datasheet:
- IXFH150N17T
IXYS IXFH150N17T technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH150N17T.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesTrenchHV™
- Published2008
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max830W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation830mW
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id5V @ 3mA
- Input Capacitance (Ciss) (Max) @ Vds9800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C150A Tc
- Gate Charge (Qg) (Max) @ Vgs155nC @ 10V
- Rise Time30ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Fall Time (Typ)30 ns
- Continuous Drain Current (ID)150A
- JEDEC-95 CodeTO-247AD
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.012Ohm
- Drain to Source Breakdown Voltage175V
- Pulsed Drain Current-Max (IDM)400A
- Avalanche Energy Rating (Eas)1500 mJ
- RoHS StatusRoHS Compliant
IXFH150N17T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9800pF @ 25V.This device conducts a continuous drain current (ID) of 150A, which is the maximum continuous current transistor can conduct.Using VGS=175V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 175V (that is, no charge flow from drain to source).Pulsed drain current is maximum rated peak drain current 400A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH150N17T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 175V voltage
based on its rated peak drain current 400A.
IXFH150N17T Applications
There are a lot of IXYS
IXFH150N17T applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9800pF @ 25V.This device conducts a continuous drain current (ID) of 150A, which is the maximum continuous current transistor can conduct.Using VGS=175V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 175V (that is, no charge flow from drain to source).Pulsed drain current is maximum rated peak drain current 400A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH150N17T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 175V voltage
based on its rated peak drain current 400A.
IXFH150N17T Applications
There are a lot of IXYS
IXFH150N17T applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFH150N17T More Descriptions
TrenchHV Power MOSFET HiperFET | MOSFET N-CH 175V 150A TO-247
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
The three parts on the right have similar specifications to IXFH150N17T.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Fall Time (Typ)Continuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusFactory Lead TimeResistanceVgs (Max)Turn-Off Delay TimeRadiation HardeningLead FreeNumber of PinsVoltage - Rated DCCurrent RatingNumber of ChannelsTurn On Delay TimeThreshold VoltageMax Junction Temperature (Tj)HeightDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinLengthWidthView Compare
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IXFH150N17TThrough HoleThrough HoleTO-247-3SILICON-55°C~175°C TJTubeTrenchHV™2008e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3R-PSFM-T3Not Qualified1830W TcSingleENHANCEMENT MODE830mWDRAINN-ChannelSWITCHING12m Ω @ 75A, 10V5V @ 3mA9800pF @ 25V150A Tc155nC @ 10V30ns10V30 ns150ATO-247AD30V0.012Ohm175V400A1500 mJRoHS Compliant-------------------
-
Through HoleThrough HoleTO-247-3SILICON-55°C~175°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)--3R-PSFM-T3-1600W TcSingleENHANCEMENT MODE600WDRAINN-ChannelSWITCHING11m Ω @ 70A, 10V5V @ 4mA4700pF @ 25V140A Tc155nC @ 10V50ns10V26 ns140ATO-247AD20V-100V300A2500 mJROHS3 Compliant30 Weeks11MOhm±20V85 nsNoLead Free------------
-
Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3-Not Qualified1400W TcSingleENHANCEMENT MODE400WDRAINN-ChannelSWITCHING350m Ω @ 11A, 10V5.5V @ 4mA3600pF @ 25V22A Tc58nC @ 10V20ns10V23 ns22ATO-247AD30V-600V66A-ROHS3 Compliant30 Weeks-±30V60 ns-Lead Free3600V22A120 ns5.5V150°C25.96mm----
-
Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeHiPerFET™, Polar3™2011--Active1 (Unlimited)3--AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)--3--1327W TcSingleENHANCEMENT MODE-DRAINN-ChannelSWITCHING540m Ω @ 7A, 10V5V @ 1mA1480pF @ 25V14A Tc25nC @ 10V-10V-14ATO-247AD30V0.54Ohm--700 mJROHS3 Compliant24 Weeks-±30V43 ns--3---21 ns--21.46mm600V600V16.26mm5.3mm
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