IXFH13N80

IXYS IXFH13N80

Part Number:
IXFH13N80
Manufacturer:
IXYS
Ventron No:
2478453-IXFH13N80
Description:
MOSFET N-CH 800V 13A TO-247AD
ECAD Model:
Datasheet:
IXFH13N80

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Specifications
IXYS IXFH13N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH13N80.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2000
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    3
  • Resistance
    800mOhm
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    800V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    13A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    800m Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    155nC @ 10V
  • Rise Time
    33ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    32 ns
  • Turn-Off Delay Time
    63 ns
  • Continuous Drain Current (ID)
    13A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    800V
  • Pulsed Drain Current-Max (IDM)
    52A
  • Recovery Time
    250 ns
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXFH13N80 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4200pF @ 25V.This device has a continuous drain current (ID) of [13A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 63 ns.A maximum pulsed drain current of 52A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

IXFH13N80 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 52A.


IXFH13N80 Applications
There are a lot of IXYS
IXFH13N80 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IXFH13N80 More Descriptions
Trans MOSFET N-CH Si 800V 13A 3-Pin(3 Tab) TO-247AD
MOSFET [Ixys] IXFH13N80 MOSFET
new, original packaged
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXFH13N80.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Recovery Time
    RoHS Status
    Lead Free
    ECCN Code
    Number of Channels
    Turn On Delay Time
    Threshold Voltage
    JEDEC-95 Code
    Max Junction Temperature (Tj)
    Height
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Length
    Width
    View Compare
  • IXFH13N80
    IXFH13N80
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e1
    yes
    Not For New Designs
    Not Applicable
    3
    800mOhm
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    800V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    13A
    NOT SPECIFIED
    3
    Not Qualified
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    N-Channel
    SWITCHING
    800m Ω @ 500mA, 10V
    4.5V @ 4mA
    4200pF @ 25V
    13A Tc
    155nC @ 10V
    33ns
    10V
    ±20V
    32 ns
    63 ns
    13A
    20V
    800V
    52A
    250 ns
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH22N60P
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, PolarHT™
    2006
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    600V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    22A
    NOT SPECIFIED
    3
    Not Qualified
    1
    400W Tc
    Single
    ENHANCEMENT MODE
    400W
    DRAIN
    N-Channel
    SWITCHING
    350m Ω @ 11A, 10V
    5.5V @ 4mA
    3600pF @ 25V
    22A Tc
    58nC @ 10V
    20ns
    10V
    ±30V
    23 ns
    60 ns
    22A
    30V
    600V
    66A
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    1
    20 ns
    5.5V
    TO-247AD
    150°C
    25.96mm
    -
    -
    -
    -
    -
    -
  • IXFH24N60X
    19 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2015
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    400W Tc
    -
    -
    -
    -
    N-Channel
    -
    175m Ω @ 12A, 10V
    4.5V @ 2.5mA
    1910pF @ 25V
    24A Tc
    47nC @ 10V
    -
    10V
    ±30V
    -
    -
    24A
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    600V
    -
    -
    -
    -
    -
  • IXFH14N60P3
    24 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, Polar3™
    2011
    -
    -
    Active
    1 (Unlimited)
    3
    -
    -
    AVALANCHE RATED
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3
    -
    1
    327W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    540m Ω @ 7A, 10V
    5V @ 1mA
    1480pF @ 25V
    14A Tc
    25nC @ 10V
    -
    10V
    ±30V
    -
    43 ns
    14A
    30V
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    21 ns
    -
    TO-247AD
    -
    21.46mm
    600V
    0.54Ohm
    600V
    700 mJ
    16.26mm
    5.3mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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