IXYS IXFH13N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH13N80.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2000
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- Resistance800mOhm
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC800V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating13A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs800m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs155nC @ 10V
- Rise Time33ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time63 ns
- Continuous Drain Current (ID)13A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage800V
- Pulsed Drain Current-Max (IDM)52A
- Recovery Time250 ns
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFH13N80 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4200pF @ 25V.This device has a continuous drain current (ID) of [13A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 63 ns.A maximum pulsed drain current of 52A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IXFH13N80 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 52A.
IXFH13N80 Applications
There are a lot of IXYS
IXFH13N80 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4200pF @ 25V.This device has a continuous drain current (ID) of [13A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 63 ns.A maximum pulsed drain current of 52A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IXFH13N80 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 63 ns
based on its rated peak drain current 52A.
IXFH13N80 Applications
There are a lot of IXYS
IXFH13N80 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IXFH13N80 More Descriptions
Trans MOSFET N-CH Si 800V 13A 3-Pin(3 Tab) TO-247AD
MOSFET [Ixys] IXFH13N80 MOSFET
new, original packaged
Contact for details
MOSFET [Ixys] IXFH13N80 MOSFET
new, original packaged
Contact for details
The three parts on the right have similar specifications to IXFH13N80.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Recovery TimeRoHS StatusLead FreeECCN CodeNumber of ChannelsTurn On Delay TimeThreshold VoltageJEDEC-95 CodeMax Junction Temperature (Tj)HeightDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)LengthWidthView Compare
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IXFH13N808 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesNot For New DesignsNot Applicable3800mOhmTin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose Power800VMOSFET (Metal Oxide)NOT SPECIFIED13ANOT SPECIFIED3Not Qualified1300W TcSingleENHANCEMENT MODE300WDRAINN-ChannelSWITCHING800m Ω @ 500mA, 10V4.5V @ 4mA4200pF @ 25V13A Tc155nC @ 10V33ns10V±20V32 ns63 ns13A20V800V52A250 nsROHS3 CompliantLead Free--------------
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30 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-600VMOSFET (Metal Oxide)NOT SPECIFIED22ANOT SPECIFIED3Not Qualified1400W TcSingleENHANCEMENT MODE400WDRAINN-ChannelSWITCHING350m Ω @ 11A, 10V5.5V @ 4mA3600pF @ 25V22A Tc58nC @ 10V20ns10V±30V23 ns60 ns22A30V600V66A-ROHS3 CompliantLead FreeEAR99120 ns5.5VTO-247AD150°C25.96mm------
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19 WeeksThrough HoleThrough HoleTO-247-3---55°C~150°C TJTubeHiPerFET™2015--Active1 (Unlimited)------MOSFET (Metal Oxide)------400W Tc----N-Channel-175m Ω @ 12A, 10V4.5V @ 2.5mA1910pF @ 25V24A Tc47nC @ 10V-10V±30V--24A----ROHS3 Compliant--------600V-----
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24 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™, Polar3™2011--Active1 (Unlimited)3--AVALANCHE RATEDFET General Purpose Power-MOSFET (Metal Oxide)---3-1327W TcSingleENHANCEMENT MODE-DRAINN-ChannelSWITCHING540m Ω @ 7A, 10V5V @ 1mA1480pF @ 25V14A Tc25nC @ 10V-10V±30V-43 ns14A30V---ROHS3 Compliant---21 ns-TO-247AD-21.46mm600V0.54Ohm600V700 mJ16.26mm5.3mm
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