Infineon Technologies IRL7833STRRPBF

Name: IRL7833STRRPBF
Brand: Infineon Technologies
SKU: 2493085-IRL7833STRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL7833STRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2493085-IRL7833STRRPBF

Description:: MOSFET N-CH 30V 150A D2PAK

ECAD Model:

Datasheet:: IRL7833STRRPBF

Specifications

Infineon Technologies IRL7833STRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL7833STRRPBF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
3.8MOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
140W Tc
Element Configuration
Single
Power Dissipation
140W
Turn On Delay Time
18 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.8mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4170pF @ 15V
Current - Continuous Drain (Id) @ 25°C
150A Tc
Gate Charge (Qg) (Max) @ Vgs
47nC @ 4.5V
Rise Time
50ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6.9 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
150A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Input Capacitance
4.17nF
Drain to Source Resistance
3.8mOhm
Rds On Max
3.8 mΩ
Nominal Vgs
2.3 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IRL7833STRRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4170pF @ 15V.This device has a continuous drain current (ID) of [150A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 21 ns.MOSFETs have 3.8mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IRL7833STRRPBF Features
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.8mOhm
a 30V drain to source voltage (Vdss)

IRL7833STRRPBF Applications
There are a lot of Infineon Technologies
IRL7833STRRPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRL7833STRRPBF More Descriptions

Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK T/R
MOSFET, 30V, 150A, 3.8 MOHM, 32 NC QG, LOGIC LEVEL, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRL7833STRRPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Rated DC

Current Rating

Number of Elements

Factory Lead Time

Contact Plating

Transistor Element Material

Number of Terminations

ECCN Code

Subcategory

Operating Mode

Case Connection

Transistor Application

Threshold Voltage

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Recovery Time

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Channels

Drain-source On Resistance-Max

Max Junction Temperature (Tj)

View Compare
IRL7833STRRPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

3.8MOhm

175°C

-55°C

MOSFET (Metal Oxide)

140W Tc

Single

140W

18 ns

N-Channel

3.8mOhm @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

50ns

30V

4.5V 10V

±20V

6.9 ns

21 ns

150A

20V

30V

4.17nF

3.8mOhm

3.8 mΩ

2.3 V

4.826mm

10.668mm

9.65mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL7833LPBF

Infineon Technologies

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

140W Tc

-

140W

18 ns

N-Channel

3.8m Ω @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

50ns

-

4.5V 10V

±20V

6.9 ns

21 ns

150A

20V

30V

-

-

-

-

-

-

-

-

No

RoHS Compliant

Lead Free

30V

150A

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL7833STRRPBF vs IRL7833LPBF
IRL7833PBF

Infineon Technologies

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

HEXFET®

2004

Active

1 (Unlimited)

3.8MOhm

-

-

MOSFET (Metal Oxide)

140W Tc

Single

140W

18 ns

N-Channel

3.8m Ω @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

50ns

-

4.5V 10V

±20V

6.9 ns

21 ns

150A

20V

30V

-

-

-

2.3 V

8.763mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Lead Free

30V

150A

1

12 Weeks

Tin

SILICON

3

EAR99

FET General Purpose Power

ENHANCEMENT MODE

DRAIN

SWITCHING

2.3V

TO-220AB

75A

600A

560 mJ

63 ns

-

-

-

-

-

-

-

-

IRL7833STRRPBF vs IRL7833PBF
IRL7472L1TRPBF

Infineon Technologies

Surface Mount

Surface Mount

DirectFET™ Isometric L8

2

-

-55°C~175°C TJ

Tape & Reel (TR)

StrongIRFET™

2009

Active

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

3.8W Ta 341W Tc

Single

3.8W

68 ns

N-Channel

0.59m Ω @ 195A, 10V

2.5V @ 250μA

20082pF @ 25V

375A Tc

330nC @ 4.5V

-

-

4.5V 10V

±20V

-

174 ns

68A

20V

40V

-

-

-

-

740μm

9.15mm

7.1mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

1

12 Weeks

-

SILICON

9

EAR99

-

ENHANCEMENT MODE

DRAIN

SWITCHING

1V

-

-

-

765 mJ

-

BOTTOM

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

R-XBCC-N9

1

0.00045Ohm

175°C

IRL7833STRRPBF vs IRL7472L1TRPBF