Infineon Technologies IRL7833PBF

Name: IRL7833PBF
Brand: Infineon Technologies
SKU: 2485099-IRL7833PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL7833PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2485099-IRL7833PBF

Description:: MOSFET N-CH 30V 150A TO-220AB

ECAD Model:

Datasheet:: IRL7833PBF

Specifications

Infineon Technologies IRL7833PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL7833PBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.8MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
150A
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.8m Ω @ 38A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4170pF @ 15V
Current - Continuous Drain (Id) @ 25°C
150A Tc
Gate Charge (Qg) (Max) @ Vgs
47nC @ 4.5V
Rise Time
50ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6.9 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
150A
Threshold Voltage
2.3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
75A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
600A
Avalanche Energy Rating (Eas)
560 mJ
Recovery Time
63 ns
Nominal Vgs
2.3 V
Height
8.763mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRL7833PBF Description IRL7833PBF is a non-isolated power converter which has a single circuit in which current can flow between the input and output. IRL7833PBF Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use Lead-Free IRL7833PBF Features Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current

IRL7833PBF More Descriptions

MOSFET, N Ch., 30V, 150A, 3.8 MOHM, 32 NC QG, TO-220AB, Pb-Free
MOSFET N-CH 30V 150A TO-220AB / Trans MOSFET N-CH 30V 150A 3-Pin(3 Tab) TO-220AB Tube
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 30 V 4.5 mOhm 47 nC HEXFET® Power Mosfet - TO-220-3
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 140 W
Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRL7833PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

DS Breakdown Voltage-Min

View Compare
IRL7833PBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

Active

1 (Unlimited)

3

EAR99

3.8MOhm

FET General Purpose Power

30V

MOSFET (Metal Oxide)

150A

1

140W Tc

Single

ENHANCEMENT MODE

140W

DRAIN

18 ns

N-Channel

SWITCHING

3.8m Ω @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

50ns

4.5V 10V

±20V

6.9 ns

21 ns

150A

2.3V

TO-220AB

20V

75A

30V

600A

560 mJ

63 ns

2.3 V

8.763mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL7833LPBF

Infineon Technologies

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

30V

MOSFET (Metal Oxide)

150A

1

140W Tc

-

-

140W

-

18 ns

N-Channel

-

3.8m Ω @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

50ns

4.5V 10V

±20V

6.9 ns

21 ns

150A

-

-

20V

-

30V

-

-

-

-

-

-

-

-

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL7833PBF vs IRL7833LPBF
IRL7833STRRPBF

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

3.8MOhm

-

-

MOSFET (Metal Oxide)

-

-

140W Tc

Single

-

140W

-

18 ns

N-Channel

-

3.8mOhm @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

50ns

4.5V 10V

±20V

6.9 ns

21 ns

150A

-

-

20V

-

30V

-

-

-

2.3 V

4.826mm

10.668mm

9.65mm

No SVHC

No

RoHS Compliant

Lead Free

D2PAK

175°C

-55°C

30V

4.17nF

3.8mOhm

3.8 mΩ

-

-

-

-

-

-

IRL7833PBF vs IRL7833STRRPBF
IRL7486MTRPBF

Infineon Technologies

12 Weeks

-

Surface Mount

Surface Mount

DirectFET™ Isometric ME

2

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®, StrongIRFET™

2013

Active

1 (Unlimited)

6

EAR99

-

-

-

MOSFET (Metal Oxide)

-

1

104W Tc

Single

ENHANCEMENT MODE

-

DRAIN

35 ns

N-Channel

SWITCHING

1.25m Ω @ 123A, 10V

2.5V @ 150μA

6904pF @ 25V

209A Tc

111nC @ 4.5V

-

4.5V 10V

±20V

-

54 ns

209A

1.8V

-

20V

-

-

836A

190 mJ

-

-

700μm

6.35mm

5.05mm

Unknown

-

ROHS3 Compliant

Lead Free

-

-

-

40V

-

-

-

BOTTOM

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

R-XBCC-N6

40V

IRL7833PBF vs IRL7486MTRPBF