Infineon Technologies IRL7833LPBF
- Part Number:
- IRL7833LPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071666-IRL7833LPBF
- Description:
- MOSFET N-CH 30V 150A TO-262
- Datasheet:
- IRL7833LPBF
Infineon Technologies IRL7833LPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL7833LPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Current Rating150A
- Number of Elements1
- Power Dissipation-Max140W Tc
- Power Dissipation140W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.8m Ω @ 38A, 10V
- Vgs(th) (Max) @ Id2.3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4170pF @ 15V
- Current - Continuous Drain (Id) @ 25°C150A Tc
- Gate Charge (Qg) (Max) @ Vgs47nC @ 4.5V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)6.9 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)150A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRL7833LPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4170pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRL7833LPBF Features
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
IRL7833LPBF Applications
There are a lot of Infineon Technologies
IRL7833LPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4170pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRL7833LPBF Features
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
IRL7833LPBF Applications
There are a lot of Infineon Technologies
IRL7833LPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRL7833LPBF More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
MOSFET, 30V, 150A, 3.8 MOHM, 32 NC QG, LOGIC LEVEL, TO-262
Compliant Through Hole 6.9 ns Lead Free Bulk 50 ns 3.8 mΩ TO-262
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
MOSFET, 30V, 150A, 3.8 MOHM, 32 NC QG, LOGIC LEVEL, TO-262
Compliant Through Hole 6.9 ns Lead Free Bulk 50 ns 3.8 mΩ TO-262
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRL7833LPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningRoHS StatusLead FreeNumber of PinsECCN CodeResistanceNumber of ChannelsElement ConfigurationThreshold VoltageRecovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCFactory Lead TimeContact PlatingTransistor Element MaterialNumber of TerminationsSubcategoryOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Terminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeDrain-source On Resistance-MaxView Compare
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IRL7833LPBFThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)30VMOSFET (Metal Oxide)150A1140W Tc140W18 nsN-Channel3.8m Ω @ 38A, 10V2.3V @ 250μA4170pF @ 15V150A Tc47nC @ 4.5V50ns4.5V 10V±20V6.9 ns21 ns150A20V30VNoRoHS CompliantLead Free--------------------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTubeHEXFET®2004Discontinued1 (Unlimited)30VMOSFET (Metal Oxide)150A-140W Tc140W18 nsN-Channel3.8m Ω @ 38A, 10V2.3V @ 250μA4170pF @ 15V150A Tc47nC @ 4.5V50ns4.5V 10V±20V6.9 ns21 ns150A20V30VNoROHS3 CompliantLead Free3EAR993.8MOhm1Single1.4V63 ns175°C2.3 V5.084mm10.668mm9.65mmNo SVHC------------------
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Through HoleThrough HoleTO-220-3-55°C~175°C TJTubeHEXFET®2004Active1 (Unlimited)30VMOSFET (Metal Oxide)150A1140W Tc140W18 nsN-Channel3.8m Ω @ 38A, 10V2.3V @ 250μA4170pF @ 15V150A Tc47nC @ 4.5V50ns4.5V 10V±20V6.9 ns21 ns150A20V30VNoROHS3 CompliantLead Free3EAR993.8MOhm-Single2.3V63 ns-2.3 V8.763mm10.5156mm4.69mmNo SVHC12 WeeksTinSILICON3FET General Purpose PowerENHANCEMENT MODEDRAINSWITCHINGTO-220AB75A600A560 mJ------
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Surface MountSurface MountDirectFET™ Isometric L8-55°C~175°C TJTape & Reel (TR)StrongIRFET™2009Active1 (Unlimited)-MOSFET (Metal Oxide)-13.8W Ta 341W Tc3.8W68 nsN-Channel0.59m Ω @ 195A, 10V2.5V @ 250μA20082pF @ 25V375A Tc330nC @ 4.5V-4.5V 10V±20V-174 ns68A20V40V-ROHS3 CompliantLead Free2EAR99-1Single1V-175°C-740μm9.15mm7.1mmNo SVHC12 Weeks-SILICON9-ENHANCEMENT MODEDRAINSWITCHING---765 mJBOTTOMNO LEADNOT SPECIFIEDNOT SPECIFIEDR-XBCC-N90.00045Ohm
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