IRL7833LPBF

Infineon Technologies IRL7833LPBF

Part Number:
IRL7833LPBF
Manufacturer:
Infineon Technologies
Ventron No:
3071666-IRL7833LPBF
Description:
MOSFET N-CH 30V 150A TO-262
ECAD Model:
Datasheet:
IRL7833LPBF

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Specifications
Infineon Technologies IRL7833LPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL7833LPBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    150A
  • Number of Elements
    1
  • Power Dissipation-Max
    140W Tc
  • Power Dissipation
    140W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3.8m Ω @ 38A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4170pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    150A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    47nC @ 4.5V
  • Rise Time
    50ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6.9 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    150A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRL7833LPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4170pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

IRL7833LPBF Features
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns


IRL7833LPBF Applications
There are a lot of Infineon Technologies
IRL7833LPBF applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRL7833LPBF More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
MOSFET, 30V, 150A, 3.8 MOHM, 32 NC QG, LOGIC LEVEL, TO-262
Compliant Through Hole 6.9 ns Lead Free Bulk 50 ns 3.8 mΩ TO-262
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRL7833LPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    RoHS Status
    Lead Free
    Number of Pins
    ECCN Code
    Resistance
    Number of Channels
    Element Configuration
    Threshold Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Factory Lead Time
    Contact Plating
    Transistor Element Material
    Number of Terminations
    Subcategory
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Drain-source On Resistance-Max
    View Compare
  • IRL7833LPBF
    IRL7833LPBF
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    30V
    MOSFET (Metal Oxide)
    150A
    1
    140W Tc
    140W
    18 ns
    N-Channel
    3.8m Ω @ 38A, 10V
    2.3V @ 250μA
    4170pF @ 15V
    150A Tc
    47nC @ 4.5V
    50ns
    4.5V 10V
    ±20V
    6.9 ns
    21 ns
    150A
    20V
    30V
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL7833SPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Discontinued
    1 (Unlimited)
    30V
    MOSFET (Metal Oxide)
    150A
    -
    140W Tc
    140W
    18 ns
    N-Channel
    3.8m Ω @ 38A, 10V
    2.3V @ 250μA
    4170pF @ 15V
    150A Tc
    47nC @ 4.5V
    50ns
    4.5V 10V
    ±20V
    6.9 ns
    21 ns
    150A
    20V
    30V
    No
    ROHS3 Compliant
    Lead Free
    3
    EAR99
    3.8MOhm
    1
    Single
    1.4V
    63 ns
    175°C
    2.3 V
    5.084mm
    10.668mm
    9.65mm
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL7833PBF
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Active
    1 (Unlimited)
    30V
    MOSFET (Metal Oxide)
    150A
    1
    140W Tc
    140W
    18 ns
    N-Channel
    3.8m Ω @ 38A, 10V
    2.3V @ 250μA
    4170pF @ 15V
    150A Tc
    47nC @ 4.5V
    50ns
    4.5V 10V
    ±20V
    6.9 ns
    21 ns
    150A
    20V
    30V
    No
    ROHS3 Compliant
    Lead Free
    3
    EAR99
    3.8MOhm
    -
    Single
    2.3V
    63 ns
    -
    2.3 V
    8.763mm
    10.5156mm
    4.69mm
    No SVHC
    12 Weeks
    Tin
    SILICON
    3
    FET General Purpose Power
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-220AB
    75A
    600A
    560 mJ
    -
    -
    -
    -
    -
    -
  • IRL7472L1TRPBF
    Surface Mount
    Surface Mount
    DirectFET™ Isometric L8
    -55°C~175°C TJ
    Tape & Reel (TR)
    StrongIRFET™
    2009
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    1
    3.8W Ta 341W Tc
    3.8W
    68 ns
    N-Channel
    0.59m Ω @ 195A, 10V
    2.5V @ 250μA
    20082pF @ 25V
    375A Tc
    330nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    174 ns
    68A
    20V
    40V
    -
    ROHS3 Compliant
    Lead Free
    2
    EAR99
    -
    1
    Single
    1V
    -
    175°C
    -
    740μm
    9.15mm
    7.1mm
    No SVHC
    12 Weeks
    -
    SILICON
    9
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    -
    765 mJ
    BOTTOM
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    R-XBCC-N9
    0.00045Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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