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IRL7472L1TRPBF

Infineon Technologies IRL7472L1TRPBF

Part Number:
IRL7472L1TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2482889-IRL7472L1TRPBF
Description:
MOSFET N-CH 40V 375A
ECAD Model:
Datasheet:
IRL7472L1TRPBF

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Specifications
Infineon Technologies IRL7472L1TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL7472L1TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    DirectFET™ Isometric L8
  • Number of Pins
    2
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    StrongIRFET™
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    9
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-XBCC-N9
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.8W Ta 341W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.8W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    68 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    0.59m Ω @ 195A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    20082pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    375A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    330nC @ 4.5V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    174 ns
  • Continuous Drain Current (ID)
    68A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.00045Ohm
  • Drain to Source Breakdown Voltage
    40V
  • Avalanche Energy Rating (Eas)
    765 mJ
  • Max Junction Temperature (Tj)
    175°C
  • Height
    740μm
  • Length
    9.15mm
  • Width
    7.1mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRL7472L1TRPBF Description
IRL7472L1TRPBF is a single N-channel IGBT power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 40V. The operating temperature of IRL7472L1TRPBF is  -55°C~175°C TJ and its maximum power dissipation are 3.8W. IRL7472L1TRPBF has 2 pins and it is available in DirectFET? Isometric L8 packaging way. The FET Type of IRL7472L1TRPBF is N-channel and its Turn-On Delay Time is 68 ns.

IRL7472L1TRPBF Features
Optimized for Logic Level Drive
Improved Gate, Avalanche, and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant 

IRL7472L1TRPBF Applications
Brushed Motor drive applications
BLDC Motor drive applications
Battery-powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters 
IRL7472L1TRPBF More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package, MG-WDSON-11, RoHSInfineon SCT
Single N-Channel 40 V 0.59 Ohm 220 nC HEXFET® Power Mosfet - DirectFET®
IRL7472L1TRPBF Infineon MOSFET N-Ch Si 40V 68A 15-Pin Direct-FET L8 T/R RoHS
MOSFET, N-CH, 40V, 375A, DIRECTFET L8-11; Transistor Polarity: N Channel; Continuous Drain Current Id: 375A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 340µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
Benefits: Optimized for Logic Level Drive; Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dv/dt and di/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
Product Comparison
The three parts on the right have similar specifications to IRL7472L1TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Resistance
    Voltage - Rated DC
    Current Rating
    Rise Time
    Fall Time (Typ)
    Recovery Time
    Nominal Vgs
    Radiation Hardening
    Contact Plating
    Subcategory
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    View Compare
  • IRL7472L1TRPBF
    IRL7472L1TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    DirectFET™ Isometric L8
    2
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    StrongIRFET™
    2009
    Active
    1 (Unlimited)
    9
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    R-XBCC-N9
    1
    1
    3.8W Ta 341W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    68 ns
    N-Channel
    SWITCHING
    0.59m Ω @ 195A, 10V
    2.5V @ 250μA
    20082pF @ 25V
    375A Tc
    330nC @ 4.5V
    4.5V 10V
    ±20V
    174 ns
    68A
    1V
    20V
    0.00045Ohm
    40V
    765 mJ
    175°C
    740μm
    9.15mm
    7.1mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL7833SPBF
    IRL7833SPBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Discontinued
    1 (Unlimited)
    -
    EAR99
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    140W Tc
    Single
    -
    140W
    -
    18 ns
    N-Channel
    -
    3.8m Ω @ 38A, 10V
    2.3V @ 250μA
    4170pF @ 15V
    150A Tc
    47nC @ 4.5V
    4.5V 10V
    ±20V
    21 ns
    150A
    1.4V
    20V
    -
    30V
    -
    175°C
    5.084mm
    10.668mm
    9.65mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    3.8MOhm
    30V
    150A
    50ns
    6.9 ns
    63 ns
    2.3 V
    No
    -
    -
    -
    -
    -
    IRL7472L1TRPBF vs IRL7833SPBF
  • IRL7833LPBF
    IRL7833LPBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    140W Tc
    -
    -
    140W
    -
    18 ns
    N-Channel
    -
    3.8m Ω @ 38A, 10V
    2.3V @ 250μA
    4170pF @ 15V
    150A Tc
    47nC @ 4.5V
    4.5V 10V
    ±20V
    21 ns
    150A
    -
    20V
    -
    30V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    30V
    150A
    50ns
    6.9 ns
    -
    -
    No
    -
    -
    -
    -
    -
    IRL7472L1TRPBF vs IRL7833LPBF
  • IRL7833PBF
    IRL7833PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    140W Tc
    Single
    ENHANCEMENT MODE
    140W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    3.8m Ω @ 38A, 10V
    2.3V @ 250μA
    4170pF @ 15V
    150A Tc
    47nC @ 4.5V
    4.5V 10V
    ±20V
    21 ns
    150A
    2.3V
    20V
    -
    30V
    560 mJ
    -
    8.763mm
    10.5156mm
    4.69mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    3.8MOhm
    30V
    150A
    50ns
    6.9 ns
    63 ns
    2.3 V
    No
    Tin
    FET General Purpose Power
    TO-220AB
    75A
    600A
    IRL7472L1TRPBF vs IRL7833PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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