Infineon Technologies IRL7833SPBF

Name: IRL7833SPBF
Brand: Infineon Technologies
SKU: 3554460-IRL7833SPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL7833SPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3554460-IRL7833SPBF

Description:: MOSFET N-CH 30V 150A D2PAK

ECAD Model:

Datasheet:: IRL7833SPBF

Specifications

Infineon Technologies IRL7833SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL7833SPBF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
3.8MOhm
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
150A
Number of Channels
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Power Dissipation
140W
Turn On Delay Time
18 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.8m Ω @ 38A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4170pF @ 15V
Current - Continuous Drain (Id) @ 25°C
150A Tc
Gate Charge (Qg) (Max) @ Vgs
47nC @ 4.5V
Rise Time
50ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6.9 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
150A
Threshold Voltage
1.4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Recovery Time
63 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
2.3 V
Height
5.084mm
Length
10.668mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRL7833SPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4170pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.4V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

IRL7833SPBF Features
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
a threshold voltage of 1.4V

IRL7833SPBF Applications
There are a lot of Infineon Technologies
IRL7833SPBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRL7833SPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 150A;D2Pak;PD 140W;VGS /-2
Single N-Channel 30 V 3.8 mOhm 32 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK Tube / MOSFET N-CH 30V 150A D2PAK
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET, N, LOGIC, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:560mJ; Capacitance Ciss Typ:4170pF; Current Id Max:150A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:600A; Reverse Recovery Time trr Typ:42ns; SMD Marking:7833S; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.3V; Voltage Vgs th Min:1.4V

Product Comparison

The three parts on the right have similar specifications to IRL7833SPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Resistance

Voltage - Rated DC

Technology

Current Rating

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Number of Elements

Factory Lead Time

Contact Plating

Transistor Element Material

Number of Terminations

Subcategory

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Drain-source On Resistance-Max

View Compare
IRL7833SPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-55°C~175°C TJ

Tube

HEXFET®

2004

Discontinued

1 (Unlimited)

EAR99

3.8MOhm

30V

MOSFET (Metal Oxide)

150A

1

140W Tc

Single

140W

18 ns

N-Channel

3.8m Ω @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

50ns

4.5V 10V

±20V

6.9 ns

21 ns

150A

1.4V

20V

30V

63 ns

175°C

2.3 V

5.084mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL7833LPBF

Infineon Technologies

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

30V

MOSFET (Metal Oxide)

150A

-

140W Tc

-

140W

18 ns

N-Channel

3.8m Ω @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

50ns

4.5V 10V

±20V

6.9 ns

21 ns

150A

-

20V

30V

-

-

-

-

-

-

-

No

RoHS Compliant

Lead Free

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRL7833SPBF vs IRL7833LPBF
IRL7833PBF

Infineon Technologies

Through Hole

Through Hole

TO-220-3

3

-55°C~175°C TJ

Tube

HEXFET®

2004

Active

1 (Unlimited)

EAR99

3.8MOhm

30V

MOSFET (Metal Oxide)

150A

-

140W Tc

Single

140W

18 ns

N-Channel

3.8m Ω @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

50ns

4.5V 10V

±20V

6.9 ns

21 ns

150A

2.3V

20V

30V

63 ns

-

2.3 V

8.763mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Lead Free

1

12 Weeks

Tin

SILICON

3

FET General Purpose Power

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

75A

600A

560 mJ

-

-

-

-

-

-

IRL7833SPBF vs IRL7833PBF
IRL7472L1TRPBF

Infineon Technologies

Surface Mount

Surface Mount

DirectFET™ Isometric L8

2

-55°C~175°C TJ

Tape & Reel (TR)

StrongIRFET™

2009

Active

1 (Unlimited)

EAR99

-

-

MOSFET (Metal Oxide)

-

1

3.8W Ta 341W Tc

Single

3.8W

68 ns

N-Channel

0.59m Ω @ 195A, 10V

2.5V @ 250μA

20082pF @ 25V

375A Tc

330nC @ 4.5V

-

4.5V 10V

±20V

-

174 ns

68A

1V

20V

40V

-

175°C

-

740μm

9.15mm

7.1mm

No SVHC

-

ROHS3 Compliant

Lead Free

1

12 Weeks

-

SILICON

9

-

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

-

765 mJ

BOTTOM

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

R-XBCC-N9

0.00045Ohm

IRL7833SPBF vs IRL7472L1TRPBF

Certification

Related parts for IRL7833SPBF

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MOSFET N-CH 30V 150A D2PAK
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MOSFET N-CH 30V 150A TO-262
IRL7833STRRPBF

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MOSFET N-CH 30V 150A D2PAK
IRL7833PBF

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MOSFET N-CH 30V 150A TO-220AB
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IRL7833~~(12)~~
IRL783~~(12)~~
IRL78~~(12)~~
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IRL~~(58)~~

Part Number	Manufacturers	Description	Stock	Price
IRL7833SPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK Tube RoHS: Compliant	2592	1000 $1.0521 2000 $1.0492 4000 $1.0464 6000 $1.0444 10000 $1.0415
IRL7833SPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 150A D2PAK RoHS: Compliant	0
IRL7833SPBF DISTI #	Infineon Technologies AG	MOSFETs	2600	5 $1.84 25 $1.49 100 $1.22 500 $1.12 1000 $0.863 2000 $0.8
IRL7833SPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK - Ra RoHS: Compliant	537
IRL7833SPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK (Alt RoHS: Compliant	0	1 $1.0729 10 $0.9539 25 $0.8589 50 $0.7799 100 $0.7149 500 $0.6599 1000 $0.6129
IRL7833SPBF. DISTI #	Infineon Technologies AG	TRENCH_MOSFETS ROHS COMPLIANT: YES	0
IRL7833SPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 3.1 Mil RoHS: Compliant	0	400 $3.14
IRL7833SPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl RoHS: Compliant	448	1 $1.78 10 $1.51 100 $1.21 500 $1.06
IRL7833SPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 30V 150A HEXFET D2PAK, TU	398	10 $1.1 40 $0.985 100 $0.875 200 $0.86
IRL7833SPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 30V, 150A, 140	27	1 $1.38 3 $1.22 10 $1.01 50 $0.86
IRL7833SPBF DISTI #	Infineon Technologies AG	N-LogL 30V 75A 140W 0,0038R DPak RoHS: Compliant	300	10 $0.923 50 $0.723 200 $0.623 500 $0.6
IRL7833STRLPBF DISTI #	Infineon Technologies AG	N-LogL 30V 75A 140W 0,0038R DPak RoHS: Compliant	300	10 $0.907 50 $0.707 200 $0.607 500 $0.5845
IRL7833SPBF DISTI #	Infineon Technologies AG	N-CH 30V 150A 3,8mOhm TO263 RoHS: Compliant	0	1000 $0.8469
IRL7833SPBF DISTI #	Infineon Technologies AG	MOSFET, N, LOGIC, D2-PAK RoHS: Compliant	39	1 $2.82 10 $2.4 100 $1.92 500 $1.68
IRL7833SPBF DISTI #	Infineon Technologies AG	MOSFET, N, LOGIC, D2-PAK RoHS: Compliant	39	5 $1.1 25 $0.985 100 $0.86 250 $0.831 500 $0.802

Infineon Technologies IRL7833SPBF

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