Infineon Technologies IRL7833S

Name: IRL7833S
Brand: Infineon Technologies
SKU: 3586942-IRL7833S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL7833S

Manufacturer:: Infineon Technologies

Ventron No:: 3586942-IRL7833S

Description:: MOSFET N-CH 30V 150A D2PAK

ECAD Model:

Datasheet:: IRL7833S

Specifications

Infineon Technologies IRL7833S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL7833S.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
225
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
140W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.8m Ω @ 38A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4170pF @ 15V
Current - Continuous Drain (Id) @ 25°C
150A Tc
Gate Charge (Qg) (Max) @ Vgs
47nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
75A
Drain-source On Resistance-Max
0.0038Ohm
Pulsed Drain Current-Max (IDM)
600A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
560 mJ
RoHS Status
Non-RoHS Compliant

Description

IRL7833S Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 560 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4170pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 75A.A maximum pulsed drain current of 600A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IRL7833S Features
the avalanche energy rating (Eas) is 560 mJ
based on its rated peak drain current 600A.
a 30V drain to source voltage (Vdss)

IRL7833S Applications
There are a lot of Infineon Technologies
IRL7833S applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRL7833S More Descriptions

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET N-CH 30V 150A D2PAK
CAP CER 0.047UF 50V X7R RADIAL
HEXFETPower MOSFET

Product Comparison

The three parts on the right have similar specifications to IRL7833S.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Resistance

Max Operating Temperature

Min Operating Temperature

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Factory Lead Time

Number of Channels

Threshold Voltage

Max Junction Temperature (Tj)

View Compare
IRL7833S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

MOSFET (Metal Oxide)

SINGLE

GULL WING

225

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

140W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.8m Ω @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

30V

4.5V 10V

±20V

75A

0.0038Ohm

600A

30V

560 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRL7833STRRPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

140W Tc

-

-

N-Channel

-

3.8mOhm @ 38A, 10V

2.3V @ 250μA

4170pF @ 15V

150A Tc

47nC @ 4.5V

30V

4.5V 10V

±20V

-

-

-

-

-

RoHS Compliant

Surface Mount

3

D2PAK

3.8MOhm

175°C

-55°C

Single

140W

18 ns

50ns

6.9 ns

21 ns

150A

20V

30V

4.17nF

3.8mOhm

3.8 mΩ

2.3 V

4.826mm

10.668mm

9.65mm

No SVHC

No

Lead Free

-

-

-

-

IRL7833S vs IRL7833STRRPBF
IRL7472L1TRPBF

Infineon Technologies

Surface Mount

DirectFET™ Isometric L8

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

StrongIRFET™

2009

-

Active

1 (Unlimited)

9

EAR99

-

MOSFET (Metal Oxide)

BOTTOM

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

R-XBCC-N9

-

1

-

3.8W Ta 341W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

0.59m Ω @ 195A, 10V

2.5V @ 250μA

20082pF @ 25V

375A Tc

330nC @ 4.5V

-

4.5V 10V

±20V

-

0.00045Ohm

-

-

765 mJ

ROHS3 Compliant

Surface Mount

2

-

-

-

-

Single

3.8W

68 ns

-

-

174 ns

68A

20V

40V

-

-

-

-

740μm

9.15mm

7.1mm

No SVHC

-

Lead Free

12 Weeks

1

1V

175°C

IRL7833S vs IRL7472L1TRPBF
IRL7486MTRPBF

Infineon Technologies

Surface Mount

DirectFET™ Isometric ME

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®, StrongIRFET™

2013

-

Active

1 (Unlimited)

6

EAR99

-

MOSFET (Metal Oxide)

BOTTOM

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

R-XBCC-N6

-

1

-

104W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.25m Ω @ 123A, 10V

2.5V @ 150μA

6904pF @ 25V

209A Tc

111nC @ 4.5V

40V

4.5V 10V

±20V

-

-

836A

40V

190 mJ

ROHS3 Compliant

Surface Mount

2

-

-

-

-

Single

-

35 ns

-

-

54 ns

209A

20V

-

-

-

-

-

700μm

6.35mm

5.05mm

Unknown

-

Lead Free

12 Weeks

-

1.8V

-

IRL7833S vs IRL7486MTRPBF

Certification

Related parts for IRL7833S

IRL7833S

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IRL7833SPBF

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IRL7833STRRPBF

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MOSFET N-CH 30V 150A D2PAK
IRL7833PBF

Infineon Technologies

MOSFET N-CH 30V 150A TO-220AB
IRL7472L1TRPBF

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IRL7833S Specification

Part Number	Manufacturers	Description	Stock	Price
IRL7833STRLPBF DISTI #V72:2272_13889792	Infineon Technologies AG	Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	111	1 $1.8264 10 $1.4168 25 $1.2945 100 $1.1328
IRL7833STRLPBF DISTI #V36:1790_13889792	Infineon Technologies AG	Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0
IRL7833STRLPBF DISTI #IRL7833STRLPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 150A D2PAK RoHS: Compliant	640	1 $1.83 10 $1.644 100 $1.3218
IRL7833STRLPBF DISTI #IRL7833STRLPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 150A D2PAK RoHS: Compliant	640	1 $1.83 10 $1.644 100 $1.3218
IRL7833S DISTI #IRL7833S-ND	Infineon Technologies AG	MOSFET N-CH 30V 150A D2PAK RoHS: Not Compliant	0
IRL7833SPBF DISTI #IRL7833SPBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 150A D2PAK RoHS: Compliant	0
IRL7833STRRPBF DISTI #IRL7833STRRPBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 150A D2PAK RoHS: Compliant	0
IRL7833STRLPBF DISTI #IRL7833STRLPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 150A D2PAK RoHS: Compliant	0	800 $1.05436 1600 $0.87361 2400 $0.81336 5600 $0.80332
IRL7833SPBF DISTI #30701899	Infineon Technologies AG	Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK Tube RoHS: Compliant	576	16 $1.4949 100 $1.1979 500 $1.0494
IRL7833STRLPBF DISTI #31343756	Infineon Technologies AG	Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	111	11 $1.4168 25 $1.2945 100 $1.1328
IRL7833STRLPBF DISTI #IRL7833STRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 150A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $0.66138 1600 $0.6375 3200 $0.61446 4800 $0.59379 8000 $0.58323
IRL7833SPBF. DISTI #27AC6966	Infineon Technologies AG	TRENCH_MOSFETS ROHS COMPLIANT: YES	0
IRL7833STRLPBF DISTI #43AC3303	Infineon Technologies AG	MOSFET, N-CH, 30V, 150A, TO-263-3, Transistor Pol	0	1 $1.7 10 $1.44 25 $1.35 50 $1.25 100 $1.15 250 $1.08 500 $1.01
IRL7833STRLPBF. DISTI #32AC0786	Infineon Technologies AG	Transistor Polarity:N Channel, Continuous Drain C	0
IRL7833SPBF DISTI #70017095	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 3.1 Mil RoHS: Compliant	0	400 $1.99
IRL7833STRLPBF DISTI #70019052	Infineon Technologies AG	IRL7833STRLPBF N-channel MOSFET Transistor, 150 A RoHS: Compliant	0	8 $1.87
IRL7833STRRPBF DISTI #70019828	Infineon Technologies AG	MOSFET, 30V, 150A, 3.8 MOHM, 32 NC QG, LOGIC RoHS: Compliant	0	800 $3.09 1600 $3.028 4000 $2.936 8000 $2.812 20000 $2.627
IRL7833STRLPBF DISTI #942-IRL7833STRLPBF	Infineon Technologies AG	MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl RoHS: Compliant	4627	1 $1.68 10 $1.43 100 $1.14 500 $1 800 $0.832
IRL7833SPBF DISTI #942-IRL7833SPBF	Infineon Technologies AG	MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl RoHS: Compliant	0
IRL7833STRRPBF DISTI #942-IRL7833STRRPBF	Infineon Technologies AG	MOSFET RoHS: Compliant	0
IRL7833SPBF DISTI #6887197P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 150A HEXFET D2PAK, TU	540	10 $1.1 40 $0.985 100 $0.875 200 $0.86
IRL7833STRLPBF DISTI #9155083P	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 30V 150A D2PAK, RL	2112	80 $1.029 160 $0.873 400 $0.819 800 $0.8
IRL7833SPBF DISTI #IRL7833SPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 30V, 150A, 140	77	1 $1.37 3 $1.22 10 $1.01 50 $0.86
IRL7833STRLPBF DISTI #2803428	Infineon Technologies AG	MOSFET, N-CH, 30V, 150A, TO-263-3 RoHS: Compliant	0	5 $2.75 25 $2.4 100 $1.95 250 $1.65 500 $1.43 1000 $1.35 5000 $1.28
IRL7833SPBF DISTI #1013408	Infineon Technologies AG	MOSFET, N, LOGIC, D2-PAK RoHS: Compliant	38	1 $2.68 10 $2.28 100 $1.82 500 $1.6 1000 $1.32
IRL7833STRLPBF DISTI #2803428	Infineon Technologies AG	MOSFET, N-CH, 30V, 150A, TO-263-3	0	5 $1.22 25 $1.12 100 $0.897 250 $0.775 500 $0.654
IRL7833SPBF DISTI #1013408	Infineon Technologies AG	MOSFET, N, LOGIC, D2-PAK RoHS: Compliant	38	5 $1.29 25 $1.17 100 $0.945 250 $0.885 500 $0.825

IRL7833~~(12)~~
IRL783~~(12)~~
IRL78~~(12)~~
IRL7~~(14)~~
IRL~~(58)~~

Infineon Technologies IRL7833S

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