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IRL7486MTRPBF

Infineon Technologies IRL7486MTRPBF

Part Number:
IRL7486MTRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2482824-IRL7486MTRPBF
Description:
MOSFET N-CH 40V 209A
ECAD Model:
Datasheet:
IRL7486MTRPBF

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Specifications
Infineon Technologies IRL7486MTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL7486MTRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    DirectFET™ Isometric ME
  • Number of Pins
    2
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®, StrongIRFET™
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-XBCC-N6
  • Number of Elements
    1
  • Power Dissipation-Max
    104W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    35 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.25m Ω @ 123A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 150μA
  • Input Capacitance (Ciss) (Max) @ Vds
    6904pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    209A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    111nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    54 ns
  • Continuous Drain Current (ID)
    209A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Pulsed Drain Current-Max (IDM)
    836A
  • DS Breakdown Voltage-Min
    40V
  • Avalanche Energy Rating (Eas)
    190 mJ
  • Height
    700μm
  • Length
    6.35mm
  • Width
    5.05mm
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRL7486MTRPBF  Description
 IRL7486MTRPBF is  Optimized for Logic Level Drive , Improved Gate, Avalanche and Dynamic dv/dt Ruggedness .The device is Fully Characterized Capacitance and Avalanche SOA.It has Enhanced body diode dv/dt and di/dt Capability ,Lead-Free and RoHS Compliant.   IRL7486MTRPBF   Features
 Optimized for Logic Level Drive  Improved Gate, Avalanche and Dynamic dv/dt Ruggednessl  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dv/dt and di/dt Capability  Lead-Free, RoHS Compliant
IRL7486MTRPBF    Application
 Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters
IRL7486MTRPBF More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package, MG-WDSON-8, RoHSInfineon SCT
Single N-Channel 40 V 1.25 mOhm 76 nC HEXFET® Power Mosfet - DirectFET®
MOSFET, N CH, 40V, 209A, DIRECTFET ME-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 209A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.001ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
Benefits: Short-circuit protection; Optimized for Logic Level Drive; Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dv/dt and di/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
Product Comparison
The three parts on the right have similar specifications to IRL7486MTRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    Supplier Device Package
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Contact Plating
    Subcategory
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Recovery Time
    View Compare
  • IRL7486MTRPBF
    IRL7486MTRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    DirectFET™ Isometric ME
    2
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®, StrongIRFET™
    2013
    Active
    1 (Unlimited)
    6
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    R-XBCC-N6
    1
    104W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    35 ns
    N-Channel
    SWITCHING
    1.25m Ω @ 123A, 10V
    2.5V @ 150μA
    6904pF @ 25V
    209A Tc
    111nC @ 4.5V
    40V
    4.5V 10V
    ±20V
    54 ns
    209A
    1.8V
    20V
    836A
    40V
    190 mJ
    700μm
    6.35mm
    5.05mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRL7833LPBF
    IRL7833LPBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    140W Tc
    -
    -
    -
    18 ns
    N-Channel
    -
    3.8m Ω @ 38A, 10V
    2.3V @ 250μA
    4170pF @ 15V
    150A Tc
    47nC @ 4.5V
    -
    4.5V 10V
    ±20V
    21 ns
    150A
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    30V
    150A
    140W
    50ns
    6.9 ns
    30V
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRL7486MTRPBF vs IRL7833LPBF
  • IRL7833STRRPBF
    IRL7833STRRPBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    140W Tc
    Single
    -
    -
    18 ns
    N-Channel
    -
    3.8mOhm @ 38A, 10V
    2.3V @ 250μA
    4170pF @ 15V
    150A Tc
    47nC @ 4.5V
    30V
    4.5V 10V
    ±20V
    21 ns
    150A
    -
    20V
    -
    -
    -
    4.826mm
    10.668mm
    9.65mm
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    140W
    50ns
    6.9 ns
    30V
    No
    D2PAK
    3.8MOhm
    175°C
    -55°C
    4.17nF
    3.8mOhm
    3.8 mΩ
    2.3 V
    -
    -
    -
    -
    -
    IRL7486MTRPBF vs IRL7833STRRPBF
  • IRL7833PBF
    IRL7833PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    140W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    3.8m Ω @ 38A, 10V
    2.3V @ 250μA
    4170pF @ 15V
    150A Tc
    47nC @ 4.5V
    -
    4.5V 10V
    ±20V
    21 ns
    150A
    2.3V
    20V
    600A
    -
    560 mJ
    8.763mm
    10.5156mm
    4.69mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    30V
    150A
    140W
    50ns
    6.9 ns
    30V
    No
    -
    3.8MOhm
    -
    -
    -
    -
    -
    2.3 V
    Tin
    FET General Purpose Power
    TO-220AB
    75A
    63 ns
    IRL7486MTRPBF vs IRL7833PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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