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IRG4RC10SPBF

Infineon Technologies IRG4RC10SPBF

Part Number:
IRG4RC10SPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497486-IRG4RC10SPBF
Description:
IGBT 600V 14A 38W DPAK
ECAD Model:
Datasheet:
IRG4RC10SPbF

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Specifications
Infineon Technologies IRG4RC10SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4RC10SPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    SMD/SMT
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    38W
  • Current Rating
    14A
  • Base Part Number
    IRG4RC10SPBF
  • Element Configuration
    Single
  • Power Dissipation
    38W
  • Input Type
    Standard
  • Power - Max
    38W
  • Rise Time
    28ns
  • Collector Emitter Voltage (VCEO)
    1.8V
  • Max Collector Current
    14A
  • Collector Emitter Breakdown Voltage
    600V
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    14A
  • Collector Emitter Saturation Voltage
    1.7V
  • Test Condition
    480V, 8A, 100Ohm, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 8A
  • Gate Charge
    15nC
  • Current - Collector Pulsed (Icm)
    18A
  • Td (on/off) @ 25°C
    25ns/630ns
  • Switching Energy
    140μJ (on), 2.58mJ (off)
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRG4RC10SPBF Description
IRG4RC10SPBF is a 600v insulated gate bipolar transistor. The Infineon IRG4RC10SPBF can be applied in Communications equipment, Wired networking, Enterprise systems, Enterprise projectors, Personal electronics, and Portable electronics applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4RC10SPBF is in the TO-252AA package with 38W power dissipation. 

IRG4RC10SPBF Features
Extremely low voltage drop; 1.0V typical at 2A, 100°C Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than the previous generation Industry-standard TO-252AA package Generation 4 IGBTs offer the highest efficiency available IGBTs optimized for specified application conditions

IRG4RC10SPBF Applications
Communications equipment  Wired networking  Enterprise systems  Enterprise projectors  Personal electronics  Portable electronics
IRG4RC10SPBF More Descriptions
600V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10SPBF
Trans IGBT Chip N-CH 600V 14A 3-Pin(2 Tab) DPAK
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
Fixed Inductors 0201 180nH 70mA /-3%
IGBT, 600V, 14A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:14A; Voltage, Vce Sat Max:1.7V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:1100ns; Time, Rise:28ns; Transistors, No. of:1
Product Comparison
The three parts on the right have similar specifications to IRG4RC10SPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Power - Max
    Rise Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Reverse Recovery Time
    Turn On Time
    Turn Off Time-Nom (toff)
    Additional Feature
    JEDEC-95 Code
    View Compare
  • IRG4RC10SPBF
    IRG4RC10SPBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    SMD/SMT
    150°C
    -55°C
    600V
    38W
    14A
    IRG4RC10SPBF
    Single
    38W
    Standard
    38W
    28ns
    1.8V
    14A
    600V
    600V
    14A
    1.7V
    480V, 8A, 100Ohm, 15V
    1.8V @ 15V, 8A
    15nC
    18A
    25ns/630ns
    140μJ (on), 2.58mJ (off)
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD-STRL
    IRG4BC15UD-STRL
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    49W
    -
    -
    -
    -
    600V
    14A
    -
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    YES
    SILICON
    e3
    2
    MATTE TIN
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    POWER CONTROL
    N-CHANNEL
    28ns
    37 ns
    400 ns
    -
    -
    IRG4RC10SPBF vs IRG4BC15UD-STRL
  • IRG4BC15UD
    IRG4BC15UD
    Infineon Technologies
    -
    Through Hole
    TO-220-3
    -
    -
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    49W
    -
    -
    -
    -
    600V
    14A
    -
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    NO
    SILICON
    -
    3
    -
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    POWER CONTROL
    N-CHANNEL
    28ns
    37 ns
    400 ns
    ULTRA FAST SOFT RECOVERY
    TO-220AB
    IRG4RC10SPBF vs IRG4BC15UD
  • IRG4BC20K-S
    IRG4BC20K-S
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    60W
    -
    -
    -
    -
    600V
    16A
    -
    480V, 9A, 50Ohm, 15V
    2.8V @ 15V, 9A
    34nC
    32A
    28ns/150ns
    150μJ (on), 250μJ (off)
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRG4RC10SPBF vs IRG4BC20K-S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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