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IRG4RC10SDTRPBF

Infineon Technologies IRG4RC10SDTRPBF

Part Number:
IRG4RC10SDTRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2494888-IRG4RC10SDTRPBF
Description:
IGBT 600V 14A 38W DPAK
ECAD Model:
Datasheet:
IRG4RC10SDTRPBF

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Specifications
Infineon Technologies IRG4RC10SDTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4RC10SDTRPBF.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    350.003213mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN OVER NICKEL
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    38W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    IRG4RC10SDPBF
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    38W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Rise Time
    32ns
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.8V
  • Max Collector Current
    14A
  • Reverse Recovery Time
    28 ns
  • JEDEC-95 Code
    TO-252AA
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.7V
  • Max Breakdown Voltage
    600V
  • Turn On Time
    106 ns
  • Test Condition
    480V, 8A, 100 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 8A
  • Turn Off Time-Nom (toff)
    1780 ns
  • Gate Charge
    15nC
  • Current - Collector Pulsed (Icm)
    18A
  • Td (on/off) @ 25°C
    76ns/815ns
  • Switching Energy
    310μJ (on), 3.28mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    1080ns
  • Height
    1.2446mm
  • Length
    6.7056mm
  • Width
    6.223mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRG4RC10SDTRPBF Description   IRG4RC10SDTRPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4RC10SDTRPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4RC10SDTRPBF has the common source configuration.     IRG4RC10SDTRPBF Features   Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging     IRG4RC10SDTRPBF Applications   ISM applications DC large signal applications Power factor correction Electronic lamp ballasts Flat panel display  
IRG4RC10SDTRPBF More Descriptions
Thermistor NTC 10K Ohm 3% 2-Pin 0402 Surface Mount Solder Pad 3434K Paper T/R
Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2 Tab) DPAK T/R
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
N-Channel 600 V 16 nC Insulated Gate Bipolar Transistor Surface Mount - TO-252, DPAKCOPAK-3, RoHSInfineon SCT
Target Applications: Lighting HID; PFC
STANDARD SPEED COPACK IGBT W/ULT
IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:14A; Voltage, Vce Sat Max:1.1V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:32ns
Product Comparison
The three parts on the right have similar specifications to IRG4RC10SDTRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Surface Mount
    Terminal Position
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Voltage - Rated DC
    Current Rating
    Turn On Delay Time
    Turn-Off Delay Time
    Lead Free
    View Compare
  • IRG4RC10SDTRPBF
    IRG4RC10SDTRPBF
    Infineon Technologies
    13 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    350.003213mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2004
    e3
    Obsolete
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    MATTE TIN OVER NICKEL
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    38W
    GULL WING
    260
    30
    IRG4RC10SDPBF
    R-PSSO-G2
    1
    Single
    38W
    COLLECTOR
    Standard
    POWER CONTROL
    32ns
    N-CHANNEL
    1.8V
    14A
    28 ns
    TO-252AA
    600V
    1.7V
    600V
    106 ns
    480V, 8A, 100 Ω, 15V
    1.8V @ 15V, 8A
    1780 ns
    15nC
    18A
    76ns/815ns
    310μJ (on), 3.28mJ (off)
    20V
    6V
    1080ns
    1.2446mm
    6.7056mm
    6.223mm
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD
    IRG4BC15UD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2001
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    R-PSFM-T3
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    28ns
    TO-220AB
    -
    -
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    NO
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    49W
    600V
    14A
    -
    -
    -
    -
    -
    IRG4RC10SDTRPBF vs IRG4BC15UD
  • IRG4BC20FD-STRR
    IRG4BC20FD-STRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    -
    MATTE TIN OVER NICKEL
    -
    -
    -
    GULL WING
    260
    30
    -
    R-PSSO-G2
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    37ns
    -
    -
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60W
    600V
    16A
    -
    -
    -
    -
    -
    IRG4RC10SDTRPBF vs IRG4BC20FD-STRR
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    8 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    Last Time Buy
    1 (Unlimited)
    2
    -
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    160W
    GULL WING
    260
    30
    -
    R-PSSO-G2
    1
    Dual
    160W
    COLLECTOR
    Standard
    POWER CONTROL
    23ns
    N-CHANNEL
    2.5V
    40A
    -
    -
    600V
    2.05V
    -
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    20V
    6V
    110ns
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    -
    SINGLE
    -
    -
    -
    -
    -
    600V
    40A
    27 ns
    100 ns
    Lead Free
    IRG4RC10SDTRPBF vs IRG4BC40W-SPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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