IRG4RC10KTRR

Infineon Technologies IRG4RC10KTRR

Part Number:
IRG4RC10KTRR
Manufacturer:
Infineon Technologies
Ventron No:
3072274-IRG4RC10KTRR
Description:
IGBT 600V 9A 38W DPAK
ECAD Model:
Datasheet:
IRG4RC10KTRR

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Specifications
Infineon Technologies IRG4RC10KTRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4RC10KTRR.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    IRG4RC10K
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Input Type
    Standard
  • Power - Max
    38W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-252AA
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    9A
  • Turn On Time
    38 ns
  • Test Condition
    480V, 5A, 100 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.62V @ 15V, 5A
  • Turn Off Time-Nom (toff)
    417 ns
  • Gate Charge
    19nC
  • Current - Collector Pulsed (Icm)
    18A
  • Td (on/off) @ 25°C
    11ns/51ns
  • Switching Energy
    160μJ (on), 100μJ (off)
  • RoHS Status
    Non-RoHS Compliant
Description
IRG4RC10KTRR Description
IRG4RC10KTRR is an N-channel single IGBT transistor from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of the IRG4RC10KTRR is -55°C~150°C TJ and its maximum power dissipation is 38W. IRG4RC10KTRR has 3 pins and it is available in Tape & Reel (TR) packaging way. The Voltage - Collector Emitter Breakdown (Max) of IRG4RC10KTRR is 600V.

IRG4RC10KTRR Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit
Rated to 10μs @ 125°C, VGE = 15V
Generation 4 IGBT design provides higher efficiency than Generation 3
Industry standard TO-252AA package

IRG4RC10KTRR Applications
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
IRG4RC10KTRR More Descriptions
IGBT 600V 9A 38W DPAK
Product Comparison
The three parts on the right have similar specifications to IRG4RC10KTRR.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    ECCN Code
    Subcategory
    Case Connection
    Power Dissipation-Max (Abs)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Factory Lead Time
    Mount
    Number of Pins
    Additional Feature
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Reverse Recovery Time
    View Compare
  • IRG4RC10KTRR
    IRG4RC10KTRR
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    GULL WING
    260
    30
    IRG4RC10K
    R-PSSO-G2
    Not Qualified
    1
    SINGLE
    Standard
    38W
    MOTOR CONTROL
    N-CHANNEL
    TO-252AA
    600V
    9A
    38 ns
    480V, 5A, 100 Ω, 15V
    2.62V @ 15V, 5A
    417 ns
    19nC
    18A
    11ns/51ns
    160μJ (on), 100μJ (off)
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC30S-S
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    GULL WING
    260
    30
    -
    R-PSSO-G2
    -
    1
    SINGLE
    Standard
    100W
    POWER CONTROL
    N-CHANNEL
    -
    600V
    34A
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    Non-RoHS Compliant
    EAR99
    Insulated Gate BIP Transistors
    COLLECTOR
    100W
    20V
    6V
    590ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC40W-SPBF
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    Last Time Buy
    1 (Unlimited)
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    GULL WING
    260
    30
    -
    R-PSSO-G2
    -
    1
    -
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    ROHS3 Compliant
    EAR99
    Insulated Gate BIP Transistors
    COLLECTOR
    -
    20V
    6V
    110ns
    8 Weeks
    Surface Mount, Through Hole
    3
    LOW CONDUCTION LOSS
    600V
    160W
    40A
    Dual
    160W
    27 ns
    23ns
    100 ns
    2.5V
    40A
    600V
    2.05V
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    Lead Free
    -
  • IRG4BC20FD
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    -
    Obsolete
    1 (Unlimited)
    3
    -
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    Standard
    60W
    POWER CONTROL
    N-CHANNEL
    TO-220AB
    600V
    16A
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    Non-RoHS Compliant
    -
    -
    COLLECTOR
    -
    -
    -
    -
    -
    -
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    37ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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