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IRG4PH50UDPBF

Infineon Technologies IRG4PH50UDPBF

Part Number:
IRG4PH50UDPBF
Manufacturer:
Infineon Technologies
Ventron No:
2494582-IRG4PH50UDPBF
Description:
IGBT 1200V 45A 200W TO247AC
ECAD Model:
Datasheet:
IRG4PH50UDPBF

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Specifications
Infineon Technologies IRG4PH50UDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4PH50UDPBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2000
  • JESD-609 Code
    e3
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    ULTRA FAST
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    200W
  • Current Rating
    45A
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    200W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    47 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    24ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    110 ns
  • Collector Emitter Voltage (VCEO)
    3.7V
  • Max Collector Current
    45A
  • Reverse Recovery Time
    90 ns
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    3.7V
  • Turn On Time
    73 ns
  • Test Condition
    800V, 24A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.7V @ 15V, 24A
  • Turn Off Time-Nom (toff)
    570 ns
  • Gate Charge
    160nC
  • Current - Collector Pulsed (Icm)
    180A
  • Td (on/off) @ 25°C
    47ns/110ns
  • Switching Energy
    2.1mJ (on), 1.5mJ (off)
  • Height
    20.3mm
  • Length
    15.875mm
  • Width
    5.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRG4PH50UDPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRG4PH50UDPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRG4PH50UDPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRG4PH50UDPBF More Descriptions
Transistor IGBT Chip Negative Channel 1.2K Volt 45A 3-Pin(3 Tab) TO-247AC
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHSInfineon SCT
IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.56 V Current release time: 180 ns Power dissipation: 200 W
IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:3.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:180A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:260ns; Time, Rise:24ns; Transistors, No. of:1
Product Comparison
The three parts on the right have similar specifications to IRG4PH50UDPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Current - Collector (Ic) (Max)
    Subcategory
    Power Dissipation-Max (Abs)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    View Compare
  • IRG4PH50UDPBF
    IRG4PH50UDPBF
    Infineon Technologies
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Bulk
    2000
    e3
    Last Time Buy
    1 (Unlimited)
    3
    Through Hole
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    ULTRA FAST
    1.2kV
    200W
    45A
    1
    Single
    200W
    COLLECTOR
    Standard
    47 ns
    POWER CONTROL
    24ns
    N-CHANNEL
    110 ns
    3.7V
    45A
    90 ns
    TO-247AC
    1.2kV
    1200V
    3.7V
    73 ns
    800V, 24A, 5 Ω, 15V
    3.7V @ 15V, 24A
    570 ns
    160nC
    180A
    47ns/110ns
    2.1mJ (on), 1.5mJ (off)
    20.3mm
    15.875mm
    5.3mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD-STRL
    IRG4BC15UD-STRL
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    -
    MATTE TIN
    -
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    28ns
    -
    -
    600V
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    49W
    14A
    -
    -
    -
    -
    -
    IRG4PH50UDPBF vs IRG4BC15UD-STRL
  • IRG4BC30S-S
    IRG4BC30S-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    600V
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    -
    SINGLE
    100W
    34A
    Insulated Gate BIP Transistors
    100W
    20V
    6V
    590ns
    IRG4PH50UDPBF vs IRG4BC30S-S
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    8 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    Last Time Buy
    1 (Unlimited)
    2
    -
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    LOW CONDUCTION LOSS
    600V
    160W
    40A
    1
    Dual
    160W
    COLLECTOR
    Standard
    27 ns
    POWER CONTROL
    23ns
    N-CHANNEL
    100 ns
    2.5V
    40A
    -
    -
    600V
    -
    2.05V
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    -
    -
    -
    -
    Insulated Gate BIP Transistors
    -
    20V
    6V
    110ns
    IRG4PH50UDPBF vs IRG4BC40W-SPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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